NT5AD512M16B4-HR - 8Gb DDR4 SDRAM 512Mx16 1.2V | Nanya
N.º de pieza: NT5AD512M16B4-HR ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $53.89 | $53,89 |
| 10 | $51.2 | $512,00 |
| 100 | $48.5 | $4.850,00 |
| 500 | $45.8 | $22.900,00 |
| 1.000 | $43.1 | $43.100,00 |
NT5AD512M16B4-HR Descripción general
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, succeeding DDR3 with higher bandwidth, lower operating voltage (1.2V vs 1.5V), and improved signal integrity through on-die termination (ODT) and data bus inversion. As a volatile memory type, it stores data in capacitors that require periodic refreshing, and it is a core component in the memory hierarchy between CPU caches and storage, enabling fast read/write operations for operating systems and applications.
Key features of the NT5AD512M16B4-HR include auto self-refresh, a built-in temperature sensor for thermal management, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination, ZQ calibration, and CRC (Cyclic Redundancy Check) functions. These features enhance signal integrity, simplify system design, and improve reliability in high-speed memory interfaces.
Technically, the device uses a CMOS process and supports programmable functions such as CAS latency, burst length, and output drive strength, allowing system designers to optimize performance and power. The 96-ball TFBGA package provides a compact footprint suitable for space-constrained PCB layouts, while the 1.2V operation reduces power consumption compared to DDR3, making it ideal for energy-efficient systems.
Typical applications include networking equipment (routers, switches), industrial computing, embedded systems, and consumer electronics such as smart home devices and set-top boxes. The commercial and industrial temperature grade (0°C to +95°C) ensures reliable operation in a wide range of environments.
When designing with this DDR4 device, ensure proper termination and layout for the high-speed data bus, and follow the manufacturer's guidelines for ZQ calibration and ODT settings to maintain signal integrity at 3200 Mbps data rates.
Alternativas directas para NT5AD512M16B4-HR — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con NT5AD512M16B4-HR (mismo factor de forma y huella) — difiere en Package, Data Rate, Operating Temperature Range, Density, Memory Type.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
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Ver hoja de datos →NT5AD512M16C4-JRI
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Ver hoja de datos →MT40A512M16TB-062E
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Ver hoja de datos →MT40A512M16TB-062E:J
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Ver hoja de datos →K4A8G165WB-BCWE
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
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Ver hoja de datos →NT5AD512M16B4-HR Valores máximos y características eléctricas
| Tipo de memoria | DDR4 SDRAM |
| Density | 8Gb |
| Organización de memoria | 512M x 16 |
| Tensión de alimentación | 1.2V |
| Encapsulado | 96-ball TFBGA |
| Temperature Range | 0°C to +95°C |
| Velocidad de datos | 3200 Mbps |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| CRC Function | Yes |
| RoHS | Compliant |
Configuración de pines de NT5AD512M16B4-HR
| Pin A1 | VDD — Power supply |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin B1 | VSS — Ground |
| Pin B2 | DQ2 — Data input/output 2 |
| Pin B3 | DQ3 — Data input/output 3 |
| Pin C1 | VDDQ — DQ power supply |
| Pin C2 | DQ4 — Data input/output 4 |
| Pin C3 | DQ5 — Data input/output 5 |
| Pin D1 | VSSQ — DQ ground |
| Pin D2 | DQ6 — Data input/output 6 |
| Pin D3 | DQ7 — Data input/output 7 |
| Pin E1 | DM0 — Data mask 0 |
| Pin E2 | DQS0 — Data strobe 0 |
| Pin E3 | DQS0# — Data strobe 0 complement |
Aplicaciones típicas
NT5AD512M16B4-HR es adecuado para 6 aplicacións: Networking Equipment, Industrial Computing, Consumer Electronics, Embedded Systems, Data Center and Server, Automotive Infotainment.
Networking Equipment
The NT5AD512M16B4-HR provides high-density, high-bandwidth memory for routers, switches, and network appliances. Its 8Gb capacity and 3200 Mbps data rate support fast packet processing and routing tables. The 1.2V operation reduces power consumption in always-on network devices, while the built-in temperature sensor enables thermal monitoring in compact enclosures. The CRC function enhances data integrity in high-speed interfaces, ensuring reliable packet forwarding in enterprise and carrier-grade equipment.
Recomendado
Industrial Computing
In industrial PCs and embedded computing systems, the NT5AD512M16B4-HR offers reliable memory with a 0°C to +95°C temperature range, suitable for factory automation and process control. The 8Gb density supports complex applications like machine vision and real-time data logging. Auto self-refresh and write leveling ensure stable operation in noisy industrial environments. The 96-ball TFBGA package allows compact PCB designs for space-constrained industrial controllers, while the 1.2V supply minimizes heat generation in sealed enclosures.
Recomendado
Consumer Electronics
For smart home devices, set-top boxes, and streaming media players, the NT5AD512M16B4-HR delivers high-performance memory at 1.2V, enabling energy-efficient operation. The 8Gb capacity supports smooth video playback and multitasking in consumer applications. Features like auto precharge and dynamic on-chip termination simplify system design, reducing BOM complexity. The compact TFBGA package fits slim device form factors, while the commercial temperature range covers typical home environments, ensuring reliable performance in daily use.
Recomendado
Embedded Systems
The NT5AD512M16B4-HR is ideal for embedded systems requiring high memory bandwidth, such as medical devices, point-of-sale terminals, and kiosks. Its 512M x 16 organization provides a wide data bus for efficient data transfer. The built-in temperature sensor and auto self-refresh enhance reliability in embedded applications with varying thermal conditions. The 1.2V operation reduces power consumption, extending battery life in portable embedded devices. The 96-ball TFBGA package supports compact, rugged designs for harsh environments.
Recomendado
Data Center and Server
In data center and server applications, the NT5AD512M16B4-HR provides high-density memory for virtualization, cloud computing, and big data analytics. The 8Gb capacity and 3200 Mbps data rate support high-throughput workloads. Features like CRC and ZQ calibration ensure data integrity and signal quality in high-speed server memory channels. The 1.2V supply reduces power consumption in large-scale deployments, lowering operational costs. The industrial temperature range supports reliable operation in data center environments.
Recomendado
Automotive Infotainment
The NT5AD512M16B4-HR supports automotive infotainment systems requiring high-bandwidth memory for navigation, multimedia, and driver assistance displays. Its 8Gb density and 1.2V operation enable power-efficient performance in vehicles. The wide temperature range (0°C to +95°C) covers typical automotive cabin conditions. Features like write leveling and dynamic on-chip termination ensure reliable operation in electrically noisy automotive environments. The compact TFBGA package fits space-constrained infotainment modules.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para NT5AD512M16B4-HR — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | NT5AD512M16C4-HR | MT40A512M16TB-062E | K4A8G165WB-BCWE |
|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball FBGA |
| Brand | Nanya Technology | Nanya Technology | Micron Technology | Samsung Electronics |
| Density | 8Gb | 8Gb | 8Gb | 8Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V |
Diferenciadores clave
- Built-in temperature sensor for thermal management (frente a MT40A512M16TB-062E)
- Commercial and industrial temperature range (frente a K4A8G165WB-BCWE)
- CRC function for data integrity (frente a MT40A512M16TB-062E)
Notas de diseño
For high-speed DDR4 signals at 3200 Mbps, maintain controlled impedance of 40-50 ohms for DQ/DQS lines and 50 ohms for address/command lines. Keep trace lengths matched within +/- 10 mils for data groups. Place the 96-ball TFBGA package with adequate ground vias under the device to minimize inductance and improve signal integrity.
Decouple the 1.2V VDD and VDDQ supplies with 0.1uF and 1uF ceramic capacitors placed as close to the package balls as possible. Use a dedicated power plane for VDD and VDDQ to reduce noise. The built-in temperature sensor can be used to monitor die temperature and adjust refresh rates for power optimization.
Ensure ZQ calibration is performed after power-up by connecting a 240-ohm resistor to the ZQ pin. Do not leave the ZQ pin floating. Verify that the reset pin is properly asserted during initialization. For write leveling, follow the controller's training sequence to compensate for clock-to-strobe skew, especially in multi-rank configurations.
Información de cumplimiento
RoHS compliance indicated by distributor listings. Other compliance data not explicitly provided.
