NT5AD512M16B4-HR - 8Gb DDR4 SDRAM 512Mx16 1.2V | Nanya
Référence : NT5AD512M16B4-HR ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $53.89 | $53,89 |
| 10 | $51.2 | $512,00 |
| 100 | $48.5 | $4 850,00 |
| 500 | $45.8 | $22 900,00 |
| 1 000 | $43.1 | $43 100,00 |
NT5AD512M16B4-HR Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, succeeding DDR3 with higher bandwidth, lower operating voltage (1.2V vs 1.5V), and improved signal integrity through on-die termination (ODT) and data bus inversion. As a volatile memory type, it stores data in capacitors that require periodic refreshing, and it is a core component in the memory hierarchy between CPU caches and storage, enabling fast read/write operations for operating systems and applications.
Key features of the NT5AD512M16B4-HR include auto self-refresh, a built-in temperature sensor for thermal management, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination, ZQ calibration, and CRC (Cyclic Redundancy Check) functions. These features enhance signal integrity, simplify system design, and improve reliability in high-speed memory interfaces.
Technically, the device uses a CMOS process and supports programmable functions such as CAS latency, burst length, and output drive strength, allowing system designers to optimize performance and power. The 96-ball TFBGA package provides a compact footprint suitable for space-constrained PCB layouts, while the 1.2V operation reduces power consumption compared to DDR3, making it ideal for energy-efficient systems.
Typical applications include networking equipment (routers, switches), industrial computing, embedded systems, and consumer electronics such as smart home devices and set-top boxes. The commercial and industrial temperature grade (0°C to +95°C) ensures reliable operation in a wide range of environments.
When designing with this DDR4 device, ensure proper termination and layout for the high-speed data bus, and follow the manufacturer's guidelines for ZQ calibration and ODT settings to maintain signal integrity at 3200 Mbps data rates.
Alternatives de remplacement direct pour NT5AD512M16B4-HR — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec NT5AD512M16B4-HR (même facteur de forme et même empreinte) — différant par Package, Data Rate, Operating Temperature Range, Density, Memory Type.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
NT5AD512M16C4-HR
✅ Remplacement direct✓ En stock
$43.1 / unité
Voir la fiche technique →NT5AD512M16C4-JR
✅ Remplacement direct✓ En stock
$73.75 / unité
Voir la fiche technique →NT5AD512M16C4-JRI
✅ Remplacement direct✓ En stock
$75.58 / unité
Voir la fiche technique →MT40A512M16TB-062E
✅ Remplacement direct✓ En stock
$60 / unité
Voir la fiche technique →MT40A512M16TB-062E:J
✅ Remplacement direct✓ En stock
$8.1 / unité
Voir la fiche technique →K4A8G165WB-BCWE
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.55 / unité
Voir la fiche technique →NT5AD512M16B4-HR Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Density | 8Gb |
| Organisation de la mémoire | 512M x 16 |
| Tension d'alimentation | 1.2V |
| Boîtier | 96-ball TFBGA |
| Temperature Range | 0°C to +95°C |
| Débit de données | 3200 Mbps |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| CRC Function | Yes |
| RoHS | Compliant |
Configuration des broches de NT5AD512M16B4-HR
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ2 — Data input/output 2 |
| Broche B3 | DQ3 — Data input/output 3 |
| Broche C1 | VDDQ — DQ power supply |
| Broche C2 | DQ4 — Data input/output 4 |
| Broche C3 | DQ5 — Data input/output 5 |
| Broche D1 | VSSQ — DQ ground |
| Broche D2 | DQ6 — Data input/output 6 |
| Broche D3 | DQ7 — Data input/output 7 |
| Broche E1 | DM0 — Data mask 0 |
| Broche E2 | DQS0 — Data strobe 0 |
| Broche E3 | DQS0# — Data strobe 0 complement |
Applications typiques
NT5AD512M16B4-HR convient pour 6 applications: Networking Equipment, Industrial Computing, Consumer Electronics, Embedded Systems, Data Center and Server, Automotive Infotainment.
Networking Equipment
The NT5AD512M16B4-HR provides high-density, high-bandwidth memory for routers, switches, and network appliances. Its 8Gb capacity and 3200 Mbps data rate support fast packet processing and routing tables. The 1.2V operation reduces power consumption in always-on network devices, while the built-in temperature sensor enables thermal monitoring in compact enclosures. The CRC function enhances data integrity in high-speed interfaces, ensuring reliable packet forwarding in enterprise and carrier-grade equipment.
Recommandé
Industrial Computing
In industrial PCs and embedded computing systems, the NT5AD512M16B4-HR offers reliable memory with a 0°C to +95°C temperature range, suitable for factory automation and process control. The 8Gb density supports complex applications like machine vision and real-time data logging. Auto self-refresh and write leveling ensure stable operation in noisy industrial environments. The 96-ball TFBGA package allows compact PCB designs for space-constrained industrial controllers, while the 1.2V supply minimizes heat generation in sealed enclosures.
Recommandé
Consumer Electronics
For smart home devices, set-top boxes, and streaming media players, the NT5AD512M16B4-HR delivers high-performance memory at 1.2V, enabling energy-efficient operation. The 8Gb capacity supports smooth video playback and multitasking in consumer applications. Features like auto precharge and dynamic on-chip termination simplify system design, reducing BOM complexity. The compact TFBGA package fits slim device form factors, while the commercial temperature range covers typical home environments, ensuring reliable performance in daily use.
Recommandé
Embedded Systems
The NT5AD512M16B4-HR is ideal for embedded systems requiring high memory bandwidth, such as medical devices, point-of-sale terminals, and kiosks. Its 512M x 16 organization provides a wide data bus for efficient data transfer. The built-in temperature sensor and auto self-refresh enhance reliability in embedded applications with varying thermal conditions. The 1.2V operation reduces power consumption, extending battery life in portable embedded devices. The 96-ball TFBGA package supports compact, rugged designs for harsh environments.
Recommandé
Data Center and Server
In data center and server applications, the NT5AD512M16B4-HR provides high-density memory for virtualization, cloud computing, and big data analytics. The 8Gb capacity and 3200 Mbps data rate support high-throughput workloads. Features like CRC and ZQ calibration ensure data integrity and signal quality in high-speed server memory channels. The 1.2V supply reduces power consumption in large-scale deployments, lowering operational costs. The industrial temperature range supports reliable operation in data center environments.
Recommandé
Automotive Infotainment
The NT5AD512M16B4-HR supports automotive infotainment systems requiring high-bandwidth memory for navigation, multimedia, and driver assistance displays. Its 8Gb density and 1.2V operation enable power-efficient performance in vehicles. The wide temperature range (0°C to +95°C) covers typical automotive cabin conditions. Features like write leveling and dynamic on-chip termination ensure reliable operation in electrically noisy automotive environments. The compact TFBGA package fits space-constrained infotainment modules.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour NT5AD512M16B4-HR — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | NT5AD512M16C4-HR | MT40A512M16TB-062E | K4A8G165WB-BCWE |
|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball FBGA |
| Brand | Nanya Technology | Nanya Technology | Micron Technology | Samsung Electronics |
| Density | 8Gb | 8Gb | 8Gb | 8Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V |
Principaux différenciateurs
- Built-in temperature sensor for thermal management (vs MT40A512M16TB-062E)
- Commercial and industrial temperature range (vs K4A8G165WB-BCWE)
- CRC function for data integrity (vs MT40A512M16TB-062E)
Notes de conception
For high-speed DDR4 signals at 3200 Mbps, maintain controlled impedance of 40-50 ohms for DQ/DQS lines and 50 ohms for address/command lines. Keep trace lengths matched within +/- 10 mils for data groups. Place the 96-ball TFBGA package with adequate ground vias under the device to minimize inductance and improve signal integrity.
Decouple the 1.2V VDD and VDDQ supplies with 0.1uF and 1uF ceramic capacitors placed as close to the package balls as possible. Use a dedicated power plane for VDD and VDDQ to reduce noise. The built-in temperature sensor can be used to monitor die temperature and adjust refresh rates for power optimization.
Ensure ZQ calibration is performed after power-up by connecting a 240-ohm resistor to the ZQ pin. Do not leave the ZQ pin floating. Verify that the reset pin is properly asserted during initialization. For write leveling, follow the controller's training sequence to compensate for clock-to-strobe skew, especially in multi-rank configurations.
Informations de conformité
RoHS compliance indicated by distributor listings. Other compliance data not explicitly provided.
