NT5AD512M16C4-HR - 8Gbit DDR4 SDRAM 512Mx16 | Nanya Tech
N.º de pieza: NT5AD512M16C4-HR ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $53.89 | $53,89 |
| 10 | $51.2 | $512,00 |
| 100 | $48.5 | $4.850,00 |
| 500 | $45.8 | $22.900,00 |
| 1.000 | $43.1 | $43.100,00 |
NT5AD512M16C4-HR Descripción general
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, succeeding DDR3. It achieves higher bandwidth and lower power consumption through a prefetch of 8n, on-die termination (ODT), and a lower operating voltage of 1.2V compared to DDR3's 1.5V. DDR4 is a type of volatile memory that requires constant power to retain data, and it is widely used in servers, desktops, laptops, and embedded systems where high-speed data processing is critical.
Key features of the NT5AD512M16C4-HR include auto self-refresh, a built-in temperature sensor for thermal management, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination (DTC), ZQ calibration, and CRC (Cyclic Redundancy Check) for data integrity. These features enhance reliability and performance in demanding environments. The operating temperature range is 0°C to +95°C, suitable for commercial and industrial applications.
The device utilizes advanced CMOS technology and a 96-ball TFBGA package, which provides excellent thermal and electrical performance. The 1.2V supply reduces power consumption compared to previous generations, and the built-in temperature sensor enables adaptive refresh rates, further optimizing power usage. The CRC function ensures data integrity during high-speed transfers, critical for server and networking applications.
Typical applications include servers, desktop and laptop computers, networking equipment (routers, switches), and embedded systems such as industrial PCs and automotive infotainment. The high density and speed make it ideal for memory-intensive tasks like virtualization, data analytics, and real-time processing.
When designing with this DDR4 device, ensure proper signal integrity by following the manufacturer's layout guidelines, including controlled impedance traces and adequate decoupling. The ZQ calibration pin requires a 240-ohm resistor to ground for proper on-die termination calibration.
Alternativas directas para NT5AD512M16C4-HR — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con NT5AD512M16C4-HR (mismo factor de forma y huella) — difiere en Data Rate, Package, Operating Temperature, Density, Refresh.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
NT5AD512M16C4-JR
✅ Sustitución directa✓ En stock
$73.75 / unidad
Ver hoja de datos →NT5AD512M16C4-HRI
✅ Sustitución directa✓ En stock
$45.9375 / unidad
Ver hoja de datos →MT40A512M16TB-062E:J
✅ Sustitución directa✓ En stock
$8.1 / unidad
Ver hoja de datos →H5AN8G6NAFR-UHC
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$5.7422 / unidad
Ver hoja de datos →K4A8G165WB-BCTD
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$37 / unidad
Ver hoja de datos →NT5AD512M16C4-HR Valores máximos y características eléctricas
| Tipo de memoria | DDR4 SDRAM |
| Organización de memoria | 512M x 16 |
| Density | 8 Gbit |
| Tensión de alimentación | 1.2 V |
| Velocidad de datos | 1.333 GHz (DDR4-2666) |
| Temperatura de funcionamiento | 0°C to +95°C |
| Encapsulado | FBGA-96 (TFBGA) |
| Número de pines | 96 |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| CRC Function | Yes |
| RoHS | Compliant |
Configuración de pines de NT5AD512M16C4-HR
| Pin A1 | VDD — Power supply |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin B1 | DQ2 — Data input/output 2 |
| Pin B2 | DQ3 — Data input/output 3 |
| Pin B3 | VDD — Power supply |
| Pin B4 | DQ4 — Data input/output 4 |
| Pin C1 | DQ5 — Data input/output 5 |
| Pin C2 | VSS — Ground |
| Pin C3 | DQ6 — Data input/output 6 |
| Pin C4 | DQ7 — Data input/output 7 |
| Pin D1 | VDD — Power supply |
| Pin D2 | DQ8 — Data input/output 8 |
| Pin D3 | DQ9 — Data input/output 9 |
| Pin D4 | VSS — Ground |
| Pin E1 | DQ10 — Data input/output 10 |
| Pin E2 | DQ11 — Data input/output 11 |
| Pin E3 | VDD — Power supply |
| Pin E4 | DQ12 — Data input/output 12 |
| Pin F1 | DQ13 — Data input/output 13 |
| Pin F2 | VSS — Ground |
| Pin F3 | DQ14 — Data input/output 14 |
| Pin F4 | DQ15 — Data input/output 15 |
| Pin G1 | VDD — Power supply |
| Pin G2 | A0 — Address input 0 |
| Pin G3 | A1 — Address input 1 |
| Pin G4 | VSS — Ground |
| Pin H1 | A2 — Address input 2 |
| Pin H2 | A3 — Address input 3 |
| Pin H3 | VDD — Power supply |
| Pin H4 | A4 — Address input 4 |
| Pin J1 | A5 — Address input 5 |
| Pin J2 | VSS — Ground |
| Pin J3 | A6 — Address input 6 |
| Pin J4 | A7 — Address input 7 |
| Pin K1 | VDD — Power supply |
| Pin K2 | A8 — Address input 8 |
| Pin K3 | A9 — Address input 9 |
| Pin K4 | VSS — Ground |
| Pin L1 | A10 — Address input 10 |
| Pin L2 | A11 — Address input 11 |
| Pin L3 | VDD — Power supply |
| Pin L4 | A12 — Address input 12 |
| Pin M1 | A13 — Address input 13 |
| Pin M2 | VSS — Ground |
| Pin M3 | A14 — Address input 14 |
| Pin M4 | A15 — Address input 15 |
| Pin N1 | VDD — Power supply |
| Pin N2 | BA0 — Bank address 0 |
| Pin N3 | BA1 — Bank address 1 |
| Pin N4 | VSS — Ground |
| Pin P1 | BA2 — Bank address 2 |
| Pin P2 | RAS_n — Row address strobe |
| Pin P3 | CAS_n — Column address strobe |
| Pin P4 | WE_n — Write enable |
| Pin R1 | CS_n — Chip select |
| Pin R2 | CKE — Clock enable |
| Pin R3 | ODT — On-die termination |
| Pin R4 | ZQ — Calibration reference |
| Pin T1 | CK_t — Clock positive |
| Pin T2 | CK_c — Clock negative |
| Pin T3 | VDD — Power supply |
| Pin T4 | VSS — Ground |
Aplicaciones típicas
NT5AD512M16C4-HR es adecuado para 6 aplicacións: Server Memory, Networking Equipment, Embedded Systems, Desktop and Laptop Computers, Data Analytics and AI, Telecommunications Infrastructure.
Server Memory
The NT5AD512M16C4-HR provides high-density, high-speed memory for servers, supporting DDR4-2666 data rates and 8Gbit capacity. Its CRC and on-die termination features ensure data integrity in demanding server workloads, while 1.2V operation reduces power consumption in data centers. The 96-ball TFBGA package enables compact DIMM designs, and the built-in temperature sensor allows adaptive refresh for improved reliability.
Recomendado
Networking Equipment
In routers, switches, and network appliances, the NT5AD512M16C4-HR offers the speed and density needed for packet buffering and forwarding tables. Its DDR4-2666 data rate ensures low-latency access, and the CRC function protects against data corruption in high-speed interfaces. The 1.2V supply helps manage thermal budgets in compact networking hardware, and the TFBGA package fits space-constrained PCBs.
Recomendado
Embedded Systems
For industrial PCs, medical devices, and automotive infotainment, the NT5AD512M16C4-HR provides reliable, high-speed memory. Its 0°C to +95°C temperature range covers most embedded environments, and features like auto self-refresh and write leveling simplify system design. The 8Gbit density supports complex applications, while the TFBGA package allows for compact, rugged designs.
Recomendado
Desktop and Laptop Computers
The NT5AD512M16C4-HR is ideal for desktop and laptop memory modules, offering high bandwidth for gaming, content creation, and multitasking. Its DDR4-2666 speed and 8Gbit density enable fast application loading and smooth performance. The 1.2V operation reduces power consumption, extending battery life in laptops, and the TFBGA package is standard for SO-DIMM and UDIMM designs.
Recomendado
Data Analytics and AI
In data analytics and AI inference systems, the NT5AD512M16C4-HR provides the memory bandwidth and capacity required for large datasets and model parameters. Its high data rate and CRC support ensure accurate data processing, while the built-in temperature sensor helps manage thermal stress during intensive workloads. The 8Gbit density allows for scalable memory configurations.
Recomendado
Telecommunications Infrastructure
For base stations, switches, and telecom equipment, the NT5AD512M16C4-HR offers reliable, high-speed memory for signal processing and control plane functions. Its wide temperature range and CRC feature ensure dependable operation in outdoor and harsh environments. The 1.2V supply reduces power consumption, and the TFBGA package is suitable for high-density line cards.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para NT5AD512M16C4-HR — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | NT5AD512M16C4-JR | NT5AD512M16C4-HRI | MT40A512M16TB-062E:J | H5AN8G6NAFR-UHC | K4A8G165WB-BCTD |
|---|---|---|---|---|---|---|
| Package | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology | SK Hynix | Samsung Electronics |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Data Rate | 1.333 GHz (DDR4-2666) | 1.2 GHz (DDR4-2400) | 1.333 GHz (DDR4-2666) | 1.333 GHz (DDR4-2666) | 1.333 GHz (DDR4-2666) | 1.333 GHz (DDR4-2666) |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| CRC Function | Yes | Yes | Yes | Yes | Yes | Yes |
Diferenciadores clave
- Higher speed grade than NT5AD512M16C4-JR (frente a NT5AD512M16C4-JR)
- Commercial temperature range vs industrial (frente a NT5AD512M16C4-HRI)
- Nanya's proven reliability and compatibility (frente a MT40A512M16TB-062E:J)
Notas de diseño
For DDR4 routing, maintain controlled impedance of 40-50 ohms for data lines and 39 ohms for address/command lines. Use a solid ground plane and minimize vias to reduce signal reflections. Follow the manufacturer's layout guidelines for the 96-ball TFBGA package to ensure reliable operation at 1.333GHz.
Decouple the VDD pins with 0.1uF and 1uF ceramic capacitors placed as close to the balls as possible. Use a 10uF bulk capacitor per power rail. The ZQ pin requires a 240-ohm resistor to ground for on-die termination calibration. Ensure the VDD supply is stable and within 1.14V to 1.26V.
The NT5AD512M16C4-HR operates up to +95°C. In high-density systems, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The built-in temperature sensor can be used to implement adaptive refresh, reducing power and heat in idle states.
Información de cumplimiento
RoHS compliant per JLCPCB listing. Other compliance data not specified in verified sources.
