TC58TEG5DCKTA00 - 32Gb Toggle DDR1 MLC NAND Flash | Toshiba
N.º de pieza: TC58TEG5DCKTA00 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $5.2 | $5,20 |
| 10 | $4.68 | $46,80 |
| 100 | $4.16 | $416,00 |
| 500 | $3.74 | $1.870,00 |
| 1.000 | $3.32 | $3.320,00 |
TC58TEG5DCKTA00 Descripción general
NAND flash memory is a non-volatile storage technology that retains data without power. MLC (Multi-Level Cell) stores two bits per cell, doubling density versus SLC at the cost of lower endurance and longer program/erase times. Toggle DDR1.0 is a NAND interface standard (originated by Toshiba and Samsung) that double-data-rates command, address, and data transfers on a synchronous DDR bus, achieving higher throughput than legacy asynchronous or ONFi-compatible interfaces. NAND flashes are typically placed in the storage hierarchy beneath DRAM and above hard drives, organized into blocks and pages managed by a flash controller (often via FTL - Flash Translation Layer) for wear-leveling and bad-block management.
Key features include 32 Gbit density in a x8 organization, 4 Kbyte page size plus 128 bytes of spare area per page, 256 Kbyte block size, and Toggle DDR1.0 high-speed interface. The part supports standard NAND command sets, multi-plane operations, copy-back programming, and hardware data protection during power transitions. The TSOP-48 surface-mount package is a JEDEC-standard outline commonly used for raw NAND chips on motherboards, SSDs, and embedded storage modules.
Architecturally, the TC58TEG5DCKTA00 uses a 24 nm-class MLC NAND process node with an internal charge pump, page buffer, and ONFI-style status registers, exposed via the Toggle DDR1.0 physical layer. The asynchronous timing fallback mode allows the device to be read by a microcontroller without a high-speed controller, simplifying firmware bring-up. Error correction is handled externally by the host controller, typically using BCH or LDPC codes with sector sizes of 1 Kbyte or larger.
Typical applications include solid-state drives (SSD), eMMC alternative raw-NAND designs, USB flash drives, SD card controllers, embedded Linux boot devices, and industrial data-logging modules. The Toggle DDR1.0 throughput makes it suitable for sequential read/write workloads in consumer storage, while the 48-pin TSOP package supports low-profile SMT assembly on high-density boards.
When designing with this part, ensure the host controller supports Toggle DDR1.0 timing mode, or fall back to the legacy asynchronous interface for read-only firmware storage. ECC strength must be planned for MLC endurance (~3 K P/E cycles per block) using BCH or LDPC engines in the controller. Power-supply sequencing (VCC before VCCQ) is required to prevent latch-up at power-on.
Alternativas directas para TC58TEG5DCKTA00 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
TC58TEG5DCJTA00
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
TC58TEG5DCJ
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
TH58TEG7DDKTA00
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
TC58TEG6DDKTA00
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
TH58TEG5DDKTA00
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
TC58TEG5DCKTA00 Valores máximos y características eléctricas
| Tipo de memoria | NAND Flash (Non-Volatile) |
| Technology | MLC (Multi-Level Cell) |
| Density | 32 Gbit (4 GB) |
| Organización de memoria | 4 G x 8 |
| Interfaz | Toggle DDR1.0 (synchronous, with async fallback) |
| Page Size | 4 Kbyte + 128 byte spare |
| Block Size | 256 Kbyte + 1 Kbyte spare |
| Number of Blocks | 4096 |
| VCC (Core Supply) | 3.3 V |
| VCCQ (I/O Supply) | 1.8 V |
| Encapsulado | TSOP-48 (Type I) |
| Tipo de montaje | Surface Mount |
| Endurance (P/E Cycles) | ~3,000 per block (MLC typical) |
| Data Retention | 10 years typical (after 1 K P/E) |
| Estado RoHS | Compliant |
| Lead-Free | Yes |
Guía de configuración de pines de TC58TEG5DCKTA00 tsop-48 (type i)
Configuración de pines para TC58TEG5DCKTA00 (encapsulado tsop-48 (type i)). Este CI digital incluye GPIO, interfaces de comunicación (UART, SPI, I2C) y pines de alimentación. Consulte la hoja de datos del fabricante para conocer las funciones alternativas de los pines y las opciones de configuración. Esencial para el diseño de sistemas embebidos y el diseño de PCB.
No hay datos detallados de patillaje disponibles para TC58TEG5DCKTA00.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
TC58TEG5DCKTA00 es adecuado para 6 aplicacións: Solid-State Drive (SSD) Storage, USB Flash Drive Memory, SD Card and Memory Card Controllers, Embedded Linux Boot and Storage, Set-Top Box and Smart TV Storage, Industrial Data Logging Modules.
Solid-State Drive (SSD) Storage
The Toshiba TC58TEG5DCKTA00 provides 32 Gbit (4 GB) of raw MLC NAND flash per chip in a TSOP-48 package, making it suitable for low-capacity SATA and mSATA SSD designs where multiple chips are arranged in parallel on the PCB. The Toggle DDR1.0 synchronous interface delivers up to 133 MB/s read throughput per die, and the x8 data bus allows the SSD controller to interleave operations across 4-8 chips to reach SATA III 6 Gbps link speeds. Designers pair the TC58TEG5DCKTA00 with an SSD controller such as the Phison PS3111 or Silicon Motion SM2258XT, which provides BCH or LDPC error correction for the MLC endurance (~3 K P/E cycles).
Recomendado
USB Flash Drive Memory
The TC58TEG5DCKTA00 stores 4 GB per chip in a low-profile TSOP-48 package, ideal for USB 3.0 flash drive designs where 4-32 GB capacities are typical. A single 32 Gbit die supports USB 3.0 read speeds up to 100 MB/s when paired with a USB 3.0 controller such as the Phison PS2251-07 or SMI SM3267, which manages the Toggle DDR1.0 protocol and translates USB mass-storage commands to standard NAND read/write operations. The MLC endurance is sufficient for typical consumer USB drive write cycles over a 3-5 year product lifetime.
Recomendado
SD Card and Memory Card Controllers
The TC58TEG5DCKTA00 serves as the raw NAND storage in SDHC and microSDHC cards manufactured with the Toshiba Toggle DDR1.0 interface. Card controllers such as the Phison PS8032 or SMI SM270 handle the SD protocol layer, perform FTL (Flash Translation Layer) wear-leveling, and apply ECC to manage the 3 K P/E cycle MLC endurance. A single 32 Gbit die supports SDHC cards up to 4 GB, while higher-capacity SDXC cards stack multiple TC58TEG5DCKTA00 or density-upgrade TH58TEG7DDKTA00 chips in the same TSOP-48 footprint.
Recomendado
Embedded Linux Boot and Storage
The TC58TEG5DCKTA00 provides 4 GB of non-volatile storage in embedded Linux systems, such as industrial gateways, IoT routers, and set-top boxes, where a TSOP-48 raw NAND chip stores the bootloader, kernel, root filesystem, and user data. The asynchronous timing fallback mode allows simple ARM Cortex-M or Cortex-A microcontrollers to read firmware directly without a high-speed controller, simplifying bring-up. Designers pair the device with ECC-capable NAND controllers such as the AM335x or i.MX6 SoC, which integrate hardware BCH engines for MLC error correction.
Recomendado
Set-Top Box and Smart TV Storage
The TC58TEG5DCKTA00 delivers 32 Gbit of storage for set-top boxes (STBs), smart TVs, and digital video recorders (DVRs) where recording timeshifting and on-demand content requires reliable flash storage. The Toggle DDR1.0 interface supports the sustained read/write bandwidth needed for simultaneous video recording and playback, and the TSOP-48 low-profile package fits the slim enclosures typical of consumer A/V equipment. The 32 Gbit density scales to 4-16 GB STB configurations by stacking 1-4 chips in parallel via chip-enable multiplexing.
Recomendado
Industrial Data Logging Modules
The TC58TEG5DCKTA00 stores 4 GB of measurement data in industrial data loggers, factory automation sensors, and predictive-maintenance systems where wide-temperature-range operation and non-volatile retention are essential. The TSOP-48 package is rated for industrial temperature ranges by Toshiba distributors, and the MLC endurance of ~3,000 P/E cycles per block supports multi-year logging workloads when combined with FTL wear-leveling in the host controller. Industrial buyers pair the device with ECC controllers rated for -40C to +85C operation to maintain data integrity in harsh factory environments.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para TC58TEG5DCKTA00 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | TC58TEG5DCJTA00 | TC58TEG5DCJ | TH58TEG7DDKTA00 | TC58TEG6DDKTA00 | TH58TEG5DDKTA00 |
|---|---|---|---|---|---|---|
| Brand | Toshiba | Toshiba | Toshiba | Toshiba | Toshiba | Toshiba |
| Package | TSOP-48 | TSOP-48 - same | TSOP-48 - same | TSOP-48 - same | TSOP-48 - same | TSOP-48 - same |
| Memory Density | 32 Gbit (4 GB) | 32 Gbit (4 GB) - same | 32 Gbit (4 GB) - same | 64 Gbit (8 GB) - +100% | 128 Gbit (16 GB) - +300% | 32 Gbit (4 GB) - same |
| Organization | 4 G x 8 | 4 G x 8 - same | 4 G x 8 - same | 8 G x 8 | 16 G x 8 | 4 G x 8 - same |
| Interface | Toggle DDR1.0 | Toggle DDR1.0 - same | Toggle DDR1.0 - same | Toggle DDR1.0 - same | Toggle DDR1.0 - same | Toggle DDR1.0 - same |
| Cell Type | MLC | MLC - same | MLC - same | MLC - same | MLC - same | MLC - same |
| VCC / VCCQ | 3.3 V / 1.8 V | 3.3 V / 1.8 V - same | 3.3 V / 1.8 V - same | 3.3 V / 1.8 V - same | 3.3 V / 1.8 V - same | 3.3 V / 1.8 V - same |
| Pin Count | 48 | 48 - same | 48 - same | 48 - same | 48 - same | 48 - same |
Diferenciadores clave
- Direct density upgrade path within same Toshiba family (frente a TH58TEG7DDKTA00)
- Lower density minimizes per-unit cost when 4 GB is sufficient (frente a TC58TEG6DDKTA00)
- Asynchronous fallback mode enables firmware bring-up without high-speed controller (frente a TH58TEG5DDKTA00)
Notas de diseño
Power-up sequencing must ramp VCC (3.3 V) before or simultaneously with VCCQ (1.8 V) to prevent internal latch-up of the Toggle DDR1.0 I/O buffers. Decoupling requires 0.1 uF and 4.7 uF ceramic capacitors placed within 5 mm of the VCC and VCCQ pins, plus a 10 uF bulk capacitor on the VCC rail. The device draws 30-50 mA during program/erase operations, so the host power supply must sustain at least 100 mA peak per NAND chip with sufficient headroom for inrush.
MLC NAND endurance is rated at approximately 3,000 program/erase cycles per block, so the host controller must implement wear-leveling and bad-block management to reach product lifetimes beyond 1-2 years of continuous write operation. ECC is mandatory: BCH with 8-bit or 16-bit correction per 512 bytes is typical, or LDPC with sector sizes up to 2 Kbytes. Failure to implement proper ECC results in bit errors that accumulate beyond the controller's correction capability, leading to data corruption. Initial invalid blocks (marked in the factory) must be skipped during FTL table construction.
Route the DQ0-DQ7 data bus with matched lengths (within +/- 0.5 mm) to preserve signal integrity at Toggle DDR1.0 speeds up to 133 MB/s. The CE#, RE#, WE#, ALE, and CLE control signals should be routed with 50 ohm characteristic impedance on the top layer or inner stripline. Place the TSOP-48 package with pin 1 oriented toward a connector or controller pin direction that allows shortest DQ bus routing, and provide a continuous ground plane on layer 2 for return-current paths.
Información de cumplimiento
RoHS compliant per Toshiba product line policy for TSOP-48 NAND flash. Not AEC-Q100 qualified - for automotive applications use AEC-Q100-grade raw NAND or AEC-Q100 eMMC. Halogen-free status not confirmed in available data.
