UCC21530Q-Q1 - 4A/6A 5.7kVRMS Isolated Gate Driver | TI
MPN: UCC21530Q-Q1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.65 | $3.65 |
| 10 | $3.28 | $32.80 |
| 100 | $2.85 | $285.00 |
| 500 | $2.45 | $1,225.00 |
| 1,000 | $2.1 | $2,100.00 |
Drop-in alternatives for UCC21530Q-Q1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
UCC21530
β Drop-Inβ In Stock
$2.41 / Unit
View Datasheet βUCC21530BQDWKRQ1
β Drop-Inπ Reference alternative (not in catalog)
UCC21520Q-Q1
β Drop-Inβ In Stock
$2.85 / Unit
View Datasheet βUCC21521Q-Q1
β Drop-Inβ In Stock
$1 / Unit
View Datasheet βUCC21520
β Drop-Inβ In Stock
$1.79 / Unit
View Datasheet βUCC21530Q-Q1 Maximum Ratings & Electrical Characteristics
| Output Peak Current (Source) | 4 A |
| Output Peak Current (Sink) | 6 A |
| Isolation Rating | 5.7 kVRMS (reinforced) |
| Channel-to-Channel Spacing | 3.3 mm |
| CMTI (Common-Mode Transient Immunity) | 125 V/ns (minimum) |
| Maximum Switching Frequency | 5 MHz |
| Number of Channels | 2 |
| Configuration | Low-side, high-side, half-bridge, dual low-side |
| Dead Time | Programmable via DT pin resistor |
| Enable Pin | Yes |
| Input Threshold | TTL and CMOS compatible |
| Driven Device Types | IGBT, Si MOSFET, SiC MOSFET |
| Qualification | AEC-Q100 (automotive) |
| Package | SOIC-14 (DWK) |
| Mounting Type | Surface Mount |
| Supply Voltage VDDI | [DATA_NEEDED: VDDI range] |
| Operating Temperature | [DATA_NEEDED: temperature range] |
| RoHS Status | Compliant |
UCC21530Q-Q1 Pin Configuration
| Pin 1 | GNDI β Input-side ground reference |
| Pin 2 | INA β Input channel A (TTL/CMOS compatible) |
| Pin 3 | INB β Input channel B (TTL/CMOS compatible) |
| Pin 4 | DT β Dead-time programming pin (external resistor) |
| Pin 5 | DIS β Disable/enable control |
| Pin 6 | VDDI β Input-side supply voltage |
| Pin 7 | NC β No connect (isolation barrier region) |
| Pin 8 | VDDA β Output A supply voltage (isolated side) |
| Pin 9 | OUTA β Gate drive output A |
| Pin 10 | GND β Output-side ground for channel A |
| Pin 11 | GND β Output-side ground for channel B |
| Pin 12 | OUTB β Gate drive output B |
| Pin 13 | VDDB β Output B supply voltage (isolated side) |
| Pin 14 | NC β No connect |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
UCC21530Q-Q1 is suitable for 6 applications: Automotive Traction Inverter, 800V On-Board Charger (OBC), SiC MOSFET Half-Bridge Power Stage, Industrial Motor Drives, Solar String Inverters, Automotive DC-DC Converters and HEV/EV Auxiliaries.
Automotive Traction Inverter
In EV traction inverters, the UCC21530-Q1 drives the gate of SiC MOSFET or IGBT half-bridge legs switching 400V-to-800V DC buses. Its 4A source and 6A sink currents charge and discharge large gate charges quickly, while the guaranteed 125V/ns CMTI prevents false turn-on from high dV/dt switch-node transitions. Programmable dead time via the DT pin lets engineers optimize efficiency versus shoot-through margin, and AEC-Q100 qualification supports automotive production.
Recommended
800V On-Board Charger (OBC)
In 800V OBC PFC and LLC stages, the UCC21530-Q1 provides reinforced 5.7kVRMS isolation between the low-voltage controller domain and the high-voltage power stage. The TTL/CMOS-compatible inputs interface directly to C2000 PWM outputs, and up to 5MHz capability supports high-frequency LLC designs that shrink magnetics. For systems whose isolation standard demands more than the roughly 3mm package creepage, the enhanced-creepage UCC21530B-Q1 variant should be evaluated, as noted in TI E2E application discussions.
Recommended
SiC MOSFET Half-Bridge Power Stage
SiC MOSFETs require gate drivers with high CMTI, fast propagation, and low pulse-width distortion to exploit their fast switching. The UCC21530-Q1 delivers best-in-class propagation delay and PWM distortion, and its wide output-side supply range supports the +15V/-xV gate-drive schemes typical of SiC. The 6A sink current rapidly pulls gate charge out during turn-off, minimizing switching losses at frequencies up to 5MHz in hard-switched bridges.
Recommended
Industrial Motor Drives
In industrial three-phase motor inverters, the UCC21530-Q1 drives IGBT or SiC gate terminals for each phase leg while the reinforced isolation barrier protects the control electronics from mains-referenced potentials. Its interlock and programmable dead time prevent shoot-through in half-bridge configurations, and the enable pin permits safe fault shutdown. Industrial-grade UCC21530 offers the same performance where AEC-Q100 is unnecessary, allowing one layout to serve both markets.
Recommended
Solar String Inverters
Photovoltaic string inverter boost and DC-AC stages benefit from the UCC21530-Q1's reinforced isolation and high-frequency capability. Boost switches switching at 50-150kHz keep inductor size and cost down while the driver's low pulse-width distortion preserves duty-cycle accuracy across the isolation barrier, improving MPPT efficiency. The 5.7kVRMS barrier satisfies the insulation coordination typically required between the PV input and grid-tied control circuitry.
Recommended
Automotive DC-DC Converters and HEV/EV Auxiliaries
Auxiliary automotive DC-DC converters (for example 400V-to-12V in HEV/EV systems) use the UCC21530-Q1 to drive bridge switches in phase-shifted full-bridge or LLC topologies. AEC-Q100 grade 1 suitability, 125V/ns CMTI, and programmable dead time enable robust, efficient conversion, while the enable pin supports system-level fault handling. XAIPART carries companion TI power-management parts such as LM5176QPWPRQ1 for the low-voltage side and UCC25800-Q1 bias supplies.
Recommended
Recommended Products Summary
Engineering reference data for UCC21530Q-Q1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | UCC21530 | UCC21530BQDWKRQ1 | UCC21520Q-Q1 |
|---|---|---|---|---|
| Package | SOIC-14 (DWK) | SOIC-14 (DWK) - same | SOIC-14 (DWK) - same, enhanced creepage | SOIC-14 (DWK) - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Peak Output Current | 4A source / 6A sink | 4A source / 6A sink | 4A source / 6A sink | [DATA_NEEDED] |
| Isolation Rating | 5.7 kVRMS reinforced | 5.7 kVRMS | 5.7 kVRMS (enhanced creepage) | [DATA_NEEDED] |
| CMTI | 125 V/ns min | 125 V/ns min | 125 V/ns min | [DATA_NEEDED] |
| Dead Time | Programmable (DT pin) | Programmable (DT pin) | Programmable (DT pin) | Family-configured options |
| AEC-Q100 | Qualified (automotive) | Not qualified (industrial) | Qualified (automotive) | Qualified (automotive) |
| Max Switching Frequency | 5 MHz | 5 MHz | 5 MHz | [DATA_NEEDED] |
Key Differentiators
- AEC-Q100 automotive qualification (vs UCC21530)
- Programmable dead time with one resistor (vs UCC21520Q-Q1)
- 6A sink current capability (vs UCC21520Q-Q1)
- Standard 3.3mm channel-to-channel spacing (vs UCC21530BQDWKRQ1)
Design Notes
Place 1uF + 100nF low-ESR ceramic decoupling capacitors directly at VDDA and VDDB, each with its own ground return to GND. The 4A/6A peak gate currents create fast di/dt loops; keep the OUT-to-GND loop area minimal to limit ringing. On the input side, decouple VDDI with 100nF. Follow the SOIC-14 DWK layout section of the TI UCC21530-Q1 datasheet for creepage and clearance compliance on the isolated barrier.
For 800V-class designs, verify creepage: TI E2E forum discussion (Feb 2025) notes the standard DWK package offers about 3mm creepage, while some 800V OBC specifications require up to 4mm. In such cases, evaluate the UCC21530BQDWKRQ1 enhanced-creepage variant in the same footprint. Also size the DT resistor per the datasheet equation - an incorrect value erodes shoot-through margin with SiC switches.
Gate-drive power dissipation is P = Qg * Vdrive * fsw * 2 (two channels). At Qg = 100nC, Vdrive = 18V, and fsw = 100kHz per channel, each output dissipates roughly 0.36W. Confirm junction temperature stays within the datasheet limit using the DWK package theta-JA and account for ambient temperature in sealed automotive enclosures before finalizing switching frequency.
The 125V/ns minimum CMTI guards against dV/dt-induced false triggering, but Miller clamp or negative gate bias may still be needed for SiC bridges with very high slew rates. Route the DT pin trace away from high-dV/dt switch-node copper, and use a ground plane on the input side to keep the TTL/CMOS INA/INB signals clean against switching noise.
Compliance Information
AEC-Q100 qualified per TI product page (automotive grade). RoHS and lead-free status per standard TI automotive packaging; verify on TI quality portal.
