IPB021N10NM5LF2ATMA1 vs IPB081N06L3GATMA1 مقایسه
مقایسه دقیق کنار به کنار IPB021N10NM5LF2ATMA1 توسط Infineon و IPB081N06L3GATMA1 توسط Infineon. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | IPB021N10NM5LF2ATMA1 | IPB081N06L3GATMA1 |
|---|---|---|
| برند | Infineon | Infineon |
| دسته‌بندی | MOSFETs | MOSFETs |
| وضعیت چرخه عمر | فعال | فعال |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 Linear FET 2 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D) at T_C=25°C | 176 A | — |
| Continuous Drain Current (I_D) at T_A=25°C | 30 A | — |
| R_DS(on) Maximum | 2.1 mΩ | — |
| Gate-Source Voltage (V_GS) Maximum | ±20 V [DATA_NEEDED: absolute max rated V_GS] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min] | — |
| Power Dissipation (P_D) at T_C=25°C | 375 W | — |
| Power Dissipation (P_D) at T_A=25°C | 3.8 W | — |
| محدوده دمای کاری | -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] | -55 C to +175 C (junction) |
| بسته‌بندی | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) | PG-TO263-3 (D2PAK) |
| نوع نصب | Surface Mount | Surface Mount |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | 10 V, 15 V | — |
| Technology | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) | OptiMOS 3 (low-voltage power MOSFET) |
| وضعیت RoHS | Compliant | Compliant |
| سطح MSL | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] | 1 (unlimited) |
| Series | — | OptiMOS 3 |
| نوع ترانزیستور | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc=25C | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current rating] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | 1.2 V min, 2.1 V typ, 2.6 V max |
| On-Resistance RDS(on) at VGS=10V | — | 8.1 mOhm typical |
| Maximum Power Dissipation (Pd) at Tc=25C | — | 79 W |
| تعداد پین‌ها | — | 3 |
| Pin Configuration | — | Gate / Drain / Source (D2PAK standard) |