IRFR5410TRPBF vs IRFR5410TRRPBF مقایسه
مقایسه دقیق کنار به کنار IRFR5410TRPBF توسط Infineon و IRFR5410TRRPBF توسط Infineon. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | IRFR5410TRPBF | IRFR5410TRRPBF |
|---|---|---|
| برند | Infineon | Infineon |
| دسته‌بندی | MOSFETs | MOSFETs |
| وضعیت چرخه عمر | فعال | فعال |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TC = 25 °C | -13 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | 205 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) typ | 70 nC | — |
| بسته‌بندی | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Power Dissition (PD) at TC = 25 °C | 66 W | — |
| محدوده دمای کاری | -55 °C to +150 °C (TJ) | — |
| نوع نصب | Surface Mount | Surface Mount |
| Technology | HEXFET (advanced process, Gen 5) | HEXFET (5th Generation) |
| Avalanche Rated | Yes (fully avalanche rated) | Yes |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) | — |
| سطح MSL | [DATA_NEEDED: MSL rating] | — |
| RDS(on) Test Conditions | VGS = -10 V, ID = -7.0 A | — |
| FET Type | — | MOSFET (Metal Oxide Semiconductor) |
| VDS (Drain-Source Voltage) | — | -100 V |
| VGS (Gate-Source Voltage) | — | ±20 V |
| VGS(th) (Gate Threshold) | — | -2 V to -4 V |
| Continuous Drain Current (ID) at Tc=25C | — | -13 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at 100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max at VGS=-10V | — | 205 mΩ |
| RDS(on) typical at VGS=-10V | — | 26 mΩ (per Mouser listing for IRFR5410TRPBF) |
| Total Gate Charge (Qg) | — | 70 nC |
| Power Dissipation (Pd) at Tc=25C | — | 66 W |
| دمای اتصال کاری | — | -55C to +150C |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates lead-free) |