ISC016N08NM8ATMA1 vs IPTG025N15NM6ATMA1 مقایسه

مقایسه دقیق کنار به کنار ISC016N08NM8ATMA1 توسط Infineon و IPTG025N15NM6ATMA1 توسط Infineon. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.

Infineon
ISC016N08NM8ATMA1 ISC016N08NM8ATMA1 - 80V N-Ch OptiMOS 8 MOSFET | Infineon

ISC016N08NM8ATMA1 - 80V N-Ch OptiMOS 8 MOSFET | Infineon

ISC016N08NM8ATMA1 ✓ فعال
Infineon
IPTG025N15NM6ATMA1 IPTG025N15NM6ATMA1 - 150V OptiMOS 6 N-Channel MOSFET | Infineon

IPTG025N15NM6ATMA1 - 150V OptiMOS 6 N-Channel MOSFET | Infineon

IPTG025N15NM6ATMA1 ✓ فعال

مقایسه مشخصات

پارامتر ISC016N08NM8ATMA1 IPTG025N15NM6ATMA1
برند Infineon Infineon
دسته‌بندی MOSFETs MOSFETs
وضعیت چرخه عمر فعال فعال
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 8 —
Channel Type N-Channel —
Drain-Source Voltage (VDS max) 80 V —
Gate-Source Voltage (VGS max) +/-20 V (typical rating) —
Continuous Drain Current (ID) at Ta 29 A —
Continuous Drain Current (ID) at Tc [DATA_NEEDED: pulsed/continuous current rating at Tc] —
Pulsed Drain Current (IDM) at Tc 268 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 263 W —
On-State Resistance RDS(on) typ @ VGS=10V 1.6 mOhm —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) value]
Total Gate Charge Qg typ [DATA_NEEDED: total gate charge] [DATA_NEEDED: Qg value]
محدوده دمای کاری -55 C to +150 C (junction) -55 C to +175 C (typical for OptiMOS 6)
بسته‌بندی SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) PG-HSOG-8-1 (TOLG)
نوع نصب Surface Mount Surface Mount
Technology Trench-gate OptiMOS 8 (silicon) OptiMOS 6 150 V (N-channel trench)
وضعیت RoHS Compliant Compliant
Lead-Free / Halogen-Free Lead-free (per Infineon product page) —
سطح MSL 1 (per JEDEC J-STD-020E classification for SuperSO8) —
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) at TA=25C — 26 A
Continuous Drain Current (ID) at TC=25C — 264 A (pulsed)
Power Dissipation (PD) at TA=25C — 3.8 W
Power Dissipation (PD) at TC=25C — 395 W
On-State Resistance RDS(on) typ — 2.5 mOhm at VGS=10 V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
MSL (Moisture Sensitivity Level) — MSL1 (per JEDEC J-STD-020)
Solder Joint Reliability — Excellent - 30% smaller footprint than D2PAK

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