MRFE6S9160HSR3 vs MRFE6S9160HR3 مقایسه
مقایسه دقیق کنار به کنار MRFE6S9160HSR3 توسط NXP Semiconductors و MRFE6S9160HR3 توسط NXP Semiconductors. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | MRFE6S9160HSR3 | MRFE6S9160HR3 |
|---|---|---|
| برند | NXP Semiconductors | NXP Semiconductors |
| دسته‌بندی | MOSFETs | MOSFETs |
| وضعیت چرخه عمر | فعال | فعال |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Part Number | MRFE6S9160HSR3 | — |
| نوع ترانزیستور | LDMOS, N-Channel, Enhancement-Mode, Lateral | N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage (VDSS) | 66 V (rated) | — |
| ولتاژ شکست درین-سورس | [DATA_NEEDED: V(BR)DSS minimum] | — |
| Operating Drain Voltage (VDD) | 28 V (typical bias) | — |
| Continuous Drain Current (ID) | 10 uA [leakage spec context, ID max [DATA_NEEDED]] | — |
| Quiescent Current (IDQ) | 1200 mA | — |
| Operating Frequency Range | 865 MHz to 960 MHz | 865 MHz to 960 MHz |
| Test Frequency | 880 MHz | 880 MHz |
| Output Power (Pout) Avg. | 35 W (under N-CDMA drive, 9.8 dB PAR) | — |
| Output Power Peak | 160 W (peak envelope) | — |
| Power Gain | 21 dB (typical at 880 MHz) | — |
| Drain Efficiency | 31% (typical at 35 W avg.) | 32.4% (typical, N-CDMA, 880 MHz) |
| ACPR at 750 kHz Offset | -46.8 dBc | — |
| بسته‌بندی | NI-780S (NI780HS) ceramic, bolted flange | — |
| نوع نصب | Through-hole / chassis mount with flange | Chassis / Flange mount (through-hole RF leads) |
| وضعیت RoHS | [DATA_NEEDED: confirm via latest distributor listing] | Compliant |
| Technology | HV6E (6th gen high-voltage LDMOS) | HV6E lateral MOSFET (LDMOS-like) |
| Drain-Source Voltage (V DSS) | — | 70 V (max) |
| Drain Current (continuous) | — | [DATA_NEEDED: typical drain current at TC=25C] |
| Drain Supply Voltage (V DD) | — | 28 V (typical) |
| Output Power (Average) | — | 35 W (single-carrier N-CDMA, 880 MHz) |
| Output Power (PEP) | — | [DATA_NEEDED: PEP at specified conditions] |
| Power Gain (G ps / G p) | — | 21 dB (typical at 880 MHz) |
| بسته‌بندی / کیس | — | NI-780H-2L (ceramic/metal air-cavity flange-mount) |
| محدوده دمای کاری | — | -40C to +150C (junction) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Thermal Resistance (R thJC) | — | [DATA_NEEDED: thermal resistance junction-to-case] |
| Input Match | — | Internally matched input (broadband) |
| Lead-Free | — | Yes |
| سطح MSL | — | Not applicable (non-SMD air-cavity package) |