27C512-10 vs 27C512-25 Comparaison
Comparaison détaillée côte à côte de 27C512-10 par Texas Instruments et 27C512-25 par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Texas Instruments
27C512-10 - 512Kbit (64Kx8) 100ns CMOS EPROM | Texas Instruments
27C512-10 ✗ Fin de vieComparaison des spécifications
| Paramètre | 27C512-10 | 27C512-25 |
|---|---|---|
| Marque | Texas Instruments | Microchip Technology |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Fin de vie | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,70 | $3,20 |
| Taille de mémoire | 512 Kbit | — |
| Organisation de la mémoire | 64K x 8 | — |
| Type de mémoire | OTP EPROM (CMOS) | CMOS EPROM (UV / OTP) |
| Access Time (Speed Grade -10) | 100 ns | — |
| Supply Voltage (VCC) | +5 V with +/-10% tolerance | — |
| Programming Voltage (VPP) | +12.5 V | — |
| Standby Current | 20 uA typical (CMOS standby) | — |
| Operating Mode | Totally static operation | Asynchronous |
| Interface | Parallel, TTL compatible | — |
| Address Lines | 15 (A0-A14) | — |
| Data Lines | 8 (Q0-Q7), tri-state outputs | — |
| Control Signals | /E (chip enable), /G (output enable) | — |
| Pinout Standard | JEDEC-approved 28-pin EPROM pinout | JEDEC-approved 28-pin |
| Boîtier | 28-pin DIP | DIP-28 |
| Type de montage | Through Hole | Through Hole |
| Erase Method | One-Time Programmable (not erasable) | UV (windowed variant) or not erasable (OTP variant) |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Statut RoHS | unknown | [DATA_NEEDED: RoHS status] |
| Memory Organization | — | 64K x 8 (524,288 bits) |
| Maximum Access Time | — | 250 ns |
| Supply Voltage (Read Mode) | — | 5 V +/- 10% |
| Standby Current (CMOS) | — | 20 uA typical |
| Type de sortie | — | 3-state, common I/O |
| Programming Method | — | High-voltage EPROM programming (Flashrite type) |
| Access Time Guarantee | — | Any byte in less than 250 ns |
| Technology | — | CMOS floating gate |