27C512-10 vs 27C512-25 对比
详细并排对比 27C512-10 出自 Texas Instruments 和 27C512-25 出自 Microchip Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 27C512-10 | 27C512-25 |
|---|---|---|
| 品牌 | Texas Instruments | Microchip Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 停产 | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.70 | $3.20 |
| 存储容量 | 512 Kbit | — |
| 存储组织 | 64K x 8 | — |
| 存储器类型 | OTP EPROM (CMOS) | CMOS EPROM (UV / OTP) |
| Access Time (Speed Grade -10) | 100 ns | — |
| Supply Voltage (VCC) | +5 V with +/-10% tolerance | — |
| Programming Voltage (VPP) | +12.5 V | — |
| Standby Current | 20 uA typical (CMOS standby) | — |
| Operating Mode | Totally static operation | Asynchronous |
| 接口 | Parallel, TTL compatible | — |
| Address Lines | 15 (A0-A14) | — |
| Data Lines | 8 (Q0-Q7), tri-state outputs | — |
| Control Signals | /E (chip enable), /G (output enable) | — |
| Pinout Standard | JEDEC-approved 28-pin EPROM pinout | JEDEC-approved 28-pin |
| 封装 | 28-pin DIP | DIP-28 |
| 安装类型 | Through Hole | Through Hole |
| Erase Method | One-Time Programmable (not erasable) | UV (windowed variant) or not erasable (OTP variant) |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS 状态 | unknown | [DATA_NEEDED: RoHS status] |
| Memory Organization | — | 64K x 8 (524,288 bits) |
| Maximum Access Time | — | 250 ns |
| Supply Voltage (Read Mode) | — | 5 V +/- 10% |
| Standby Current (CMOS) | — | 20 uA typical |
| 输出类型 | — | 3-state, common I/O |
| Programming Method | — | High-voltage EPROM programming (Flashrite type) |
| Access Time Guarantee | — | Any byte in less than 250 ns |
| Technology | — | CMOS floating gate |