AT45DB041E-SSHN2B-T vs AT45DB041D-SU Comparaison
Comparaison détaillée côte à côte de AT45DB041E-SSHN2B-T par Renesas Electronics et AT45DB041D-SU par Renesas Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Renesas Electronics
AT45DB041E-SSHN2B-T - 4Mbit SPI DataFlash, 85MHz, 8-SOIC | Renesas
AT45DB041E-SSHN2B-T ✓ ActifRenesas Electronics
AT45DB041D-SU - 4Mbit SPI DataFlash 66MHz 8-SOIC | Renesas
AT45DB041D-SU ✓ ActifComparaison des spécifications
| Paramètre | AT45DB041E-SSHN2B-T | AT45DB041D-SU |
|---|---|---|
| Marque | Renesas Electronics | Renesas Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,40 | $0,92 |
| Type de mémoire | Non-volatile Flash (DataFlash / NOR) | DataFLASH NOR |
| Taille de mémoire | 4 Mbit (4,194,304 bits) | — |
| Organisation de la mémoire | 2,048 pages x 256 bytes (or 264 bytes binary page mode) | 2,048 pages x 264 bytes (binary) or 256 bytes (standard) |
| Type d'interface | SPI (Modes 0 and 3) / RapidS | — |
| Fréquence d'horloge maximale | 85 MHz | 66 MHz |
| Supply Voltage (Vcc) | 1.65 V to 3.6 V | — |
| Température de fonctionnement | -40 °C to +85 °C | [DATA_NEEDED: operating temperature range] |
| Boîtier | 8-SOIC (SOIC-N 150 mil) | 8-pin SOIC (150 mil, EIAJ) |
| Type de montage | Surface Mount | Surface Mount |
| Page Size | 256 bytes / 264 bytes | — |
| SRAM Buffers | 2 x 256/264 bytes (dual buffer) | — |
| Sector / Block Erase | Page erase as small as 256 bytes | — |
| Write Protection | Hardware, Software, and Absolute write protection | — |
| Power-on Reset | Yes (integrated) | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | — |
| Statut RoHS | Compliant | Compliant |
| Memory Format | — | FLASH |
| Density | — | 4 Mbit (4,325,376 bits) |
| Interface | — | SPI, RapidS (SPI modes 0 and 3) |
| Tension d'alimentation | — | 2.7 V to 3.6 V |
| SRAM Data Buffers | — | 2 x 264 bytes |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Endurance | — | 100,000 program/erase cycles per page |
| Data Retention | — | 20 years minimum |
| Security Register | — | 128 bytes |
| Lead-Free | — | Yes |