AT45DB041E-SSHN2B-T vs AT45DB041D-SU 对比
详细并排对比 AT45DB041E-SSHN2B-T 出自 Renesas Electronics 和 AT45DB041D-SU 出自 Renesas Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Renesas Electronics
AT45DB041E-SSHN2B-T - 4Mbit SPI DataFlash, 85MHz, 8-SOIC | Renesas
AT45DB041E-SSHN2B-T ✓ 量产中
规格对比
| 参数 | AT45DB041E-SSHN2B-T | AT45DB041D-SU |
|---|---|---|
| 品牌 | Renesas Electronics | Renesas Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.40 | $0.92 |
| 存储器类型 | Non-volatile Flash (DataFlash / NOR) | DataFLASH NOR |
| 存储容量 | 4 Mbit (4,194,304 bits) | — |
| 存储组织 | 2,048 pages x 256 bytes (or 264 bytes binary page mode) | 2,048 pages x 264 bytes (binary) or 256 bytes (standard) |
| 接口类型 | SPI (Modes 0 and 3) / RapidS | — |
| 最大时钟频率 | 85 MHz | 66 MHz |
| Supply Voltage (Vcc) | 1.65 V to 3.6 V | — |
| 工作温度 | -40 °C to +85 °C | [DATA_NEEDED: operating temperature range] |
| 封装 | 8-SOIC (SOIC-N 150 mil) | 8-pin SOIC (150 mil, EIAJ) |
| 安装类型 | Surface Mount | Surface Mount |
| Page Size | 256 bytes / 264 bytes | — |
| SRAM Buffers | 2 x 256/264 bytes (dual buffer) | — |
| Sector / Block Erase | Page erase as small as 256 bytes | — |
| Write Protection | Hardware, Software, and Absolute write protection | — |
| Power-on Reset | Yes (integrated) | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| RoHS 状态 | Compliant | Compliant |
| Memory Format | — | FLASH |
| Density | — | 4 Mbit (4,325,376 bits) |
| 接口 | — | SPI, RapidS (SPI modes 0 and 3) |
| 电源电压 | — | 2.7 V to 3.6 V |
| SRAM Data Buffers | — | 2 x 264 bytes |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Endurance | — | 100,000 program/erase cycles per page |
| Data Retention | — | 20 years minimum |
| Security Register | — | 128 bytes |
| Lead-Free | — | Yes |