FF1400R17T2P8 vs FF2000R17T2P8 Comparaison
Comparaison détaillée côte à côte de FF1400R17T2P8 par Infineon et FF2000R17T2P8 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | FF1400R17T2P8 | FF2000R17T2P8 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | IGBTs | IGBTs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $680,00 | $1 960,00 |
| Technology | TRENCHSTOP IGBT8, EC8 diode | — |
| Configuration | Half-bridge (Chopper 2) | — |
| Boîtier | XHP 2 (AG-XHP2K17) | — |
| Collector-Emitter Voltage (VCES) | 1700 V | 1700 V |
| Nominal Collector Current (IC nom) | 1400 A | — |
| Repetitive Peak Collector Current (ICRM) | 2800 A | — |
| Maximum Junction Temperature | 175 C | — |
| Integrated Temperature Sensor | NTC thermistor | NTC |
| Freewheeling Diode | EC8 emitter controlled, soft fast recovery | — |
| Qualification | Industrial, per relevant tests of IEC 60747, 60749, 60068 | — |
| Type de montage | Chassis Mount | Chassis Mount Module |
| DC-Link Voltage Class | Approx. 1000 V to 1100 V typical | — |
| Module Stray Inductance | [DATA_NEEDED: internal stray inductance] | — |
| Thermal Resistance Junction to Case (RthJC IGBT) | [DATA_NEEDED: RthJC per IGBT] | — |
| Gate-Emitter Threshold Voltage | [DATA_NEEDED: VGE(th)] | — |
| Dissipation de puissance (Ptot) | [DATA_NEEDED: total power dissipation] | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | unknown |
| Topologie | — | Half-Bridge (2-in-1) |
| Package Platform | — | XHP 2 (XHPTM2) |
| Nominal DC Collector Current | — | 2000 A |
| IGBT Technology | — | TRENCHSTOP IGBT8 trench field-stop |
| Diode Technology | — | Emitter controlled 8 (EC8) soft recovery |
| Applications Grade | — | Industrial / traction / wind |
| Short-Circuit Capability | — | Short-circuit rated per datasheet |
| Tension de saturation collecteur-émetteur (Vce(sat)) | — | [DATA_NEEDED: VCE(sat) typical] |
| Gate-Emitter Voltage (VGES) | — | [DATA_NEEDED: maximum VGES] |
| Thermal Resistance Junction to Case (RthJC) | — | [DATA_NEEDED: RthJC per IGBT] |
| Température de jonction en fonctionnement | — | [DATA_NEEDED: Tj range] |
| Power Dissipation | — | [DATA_NEEDED: maximum Ptot] |