FF1400R17T2P8 vs FF2000R17T2P8 Comparison
Detailed side-by-side comparison of FF1400R17T2P8 by Infineon and FF2000R17T2P8 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | FF1400R17T2P8 | FF2000R17T2P8 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | IGBTs | IGBTs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $680.00 | $1,960.00 |
| Technology | TRENCHSTOP IGBT8, EC8 diode | — |
| Configuration | Half-bridge (Chopper 2) | — |
| Package | XHP 2 (AG-XHP2K17) | — |
| Collector-Emitter Voltage (VCES) | 1700 V | 1700 V |
| Nominal Collector Current (IC nom) | 1400 A | — |
| Repetitive Peak Collector Current (ICRM) | 2800 A | — |
| Maximum Junction Temperature | 175 C | — |
| Integrated Temperature Sensor | NTC thermistor | NTC |
| Freewheeling Diode | EC8 emitter controlled, soft fast recovery | — |
| Qualification | Industrial, per relevant tests of IEC 60747, 60749, 60068 | — |
| Mounting Type | Chassis Mount | Chassis Mount Module |
| DC-Link Voltage Class | Approx. 1000 V to 1100 V typical | — |
| Module Stray Inductance | [DATA_NEEDED: internal stray inductance] | — |
| Thermal Resistance Junction to Case (RthJC IGBT) | [DATA_NEEDED: RthJC per IGBT] | — |
| Gate-Emitter Threshold Voltage | [DATA_NEEDED: VGE(th)] | — |
| Power Dissipation (Ptot) | [DATA_NEEDED: total power dissipation] | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | unknown |
| Topology | — | Half-Bridge (2-in-1) |
| Package Platform | — | XHP 2 (XHPTM2) |
| Nominal DC Collector Current | — | 2000 A |
| IGBT Technology | — | TRENCHSTOP IGBT8 trench field-stop |
| Diode Technology | — | Emitter controlled 8 (EC8) soft recovery |
| Applications Grade | — | Industrial / traction / wind |
| Short-Circuit Capability | — | Short-circuit rated per datasheet |
| Collector-Emitter Saturation Voltage (Vce(sat)) | — | [DATA_NEEDED: VCE(sat) typical] |
| Gate-Emitter Voltage (VGES) | — | [DATA_NEEDED: maximum VGES] |
| Thermal Resistance Junction to Case (RthJC) | — | [DATA_NEEDED: RthJC per IGBT] |
| Operating Junction Temperature | — | [DATA_NEEDED: Tj range] |
| Power Dissipation | — | [DATA_NEEDED: maximum Ptot] |