FF1400R17T2P8 vs FF2000R17T2P8 Vergleich
Detaillierter Direktvergleich von FF1400R17T2P8 von Infineon und FF2000R17T2P8 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | FF1400R17T2P8 | FF2000R17T2P8 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | IGBTs | IGBTs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $680,00 | $1.960,00 |
| Technology | TRENCHSTOP IGBT8, EC8 diode | — |
| Configuration | Half-bridge (Chopper 2) | — |
| Gehäuse | XHP 2 (AG-XHP2K17) | — |
| Collector-Emitter Voltage (VCES) | 1700 V | 1700 V |
| Nominal Collector Current (IC nom) | 1400 A | — |
| Repetitive Peak Collector Current (ICRM) | 2800 A | — |
| Maximum Junction Temperature | 175 C | — |
| Integrated Temperature Sensor | NTC thermistor | NTC |
| Freewheeling Diode | EC8 emitter controlled, soft fast recovery | — |
| Qualification | Industrial, per relevant tests of IEC 60747, 60749, 60068 | — |
| Montageart | Chassis Mount | Chassis Mount Module |
| DC-Link Voltage Class | Approx. 1000 V to 1100 V typical | — |
| Module Stray Inductance | [DATA_NEEDED: internal stray inductance] | — |
| Thermal Resistance Junction to Case (RthJC IGBT) | [DATA_NEEDED: RthJC per IGBT] | — |
| Gate-Emitter Threshold Voltage | [DATA_NEEDED: VGE(th)] | — |
| Verlustleistung (Ptot) | [DATA_NEEDED: total power dissipation] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | unknown |
| Topologie | — | Half-Bridge (2-in-1) |
| Package Platform | — | XHP 2 (XHPTM2) |
| Nominal DC Collector Current | — | 2000 A |
| IGBT Technology | — | TRENCHSTOP IGBT8 trench field-stop |
| Diode Technology | — | Emitter controlled 8 (EC8) soft recovery |
| Applications Grade | — | Industrial / traction / wind |
| Short-Circuit Capability | — | Short-circuit rated per datasheet |
| Kollektor-Emitter-Sättigungsspannung (Vce(sat)) | — | [DATA_NEEDED: VCE(sat) typical] |
| Gate-Emitter Voltage (VGES) | — | [DATA_NEEDED: maximum VGES] |
| Thermal Resistance Junction to Case (RthJC) | — | [DATA_NEEDED: RthJC per IGBT] |
| Betriebs-Sperrschichttemperatur | — | [DATA_NEEDED: Tj range] |
| Power Dissipation | — | [DATA_NEEDED: maximum Ptot] |