FF1400R17T2P8 vs FF2000R17T2P8 比較

詳細な並列比較: FF1400R17T2P8 メーカー: Infineon および FF2000R17T2P8 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

Infineon
FF1400R17T2P8 FF1400R17T2P8 - 1700V 1400A XHP2 IGBT Module | Infineon

FF1400R17T2P8 - 1700V 1400A XHP2 IGBT Module | Infineon

FF1400R17T2P8 ✓ 生産中

仕様比較

パラメータ FF1400R17T2P8 FF2000R17T2P8
ブランド Infineon Infineon
カテゴリ IGBTs IGBTs
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $680.00 $1,960.00
Technology TRENCHSTOP IGBT8, EC8 diode —
Configuration Half-bridge (Chopper 2) —
パッケージ XHP 2 (AG-XHP2K17) —
Collector-Emitter Voltage (VCES) 1700 V 1700 V
Nominal Collector Current (IC nom) 1400 A —
Repetitive Peak Collector Current (ICRM) 2800 A —
Maximum Junction Temperature 175 C —
Integrated Temperature Sensor NTC thermistor NTC
Freewheeling Diode EC8 emitter controlled, soft fast recovery —
Qualification Industrial, per relevant tests of IEC 60747, 60749, 60068 —
実装タイプ Chassis Mount Chassis Mount Module
DC-Link Voltage Class Approx. 1000 V to 1100 V typical —
Module Stray Inductance [DATA_NEEDED: internal stray inductance] —
Thermal Resistance Junction to Case (RthJC IGBT) [DATA_NEEDED: RthJC per IGBT] —
Gate-Emitter Threshold Voltage [DATA_NEEDED: VGE(th)] —
消費電力(Ptot) [DATA_NEEDED: total power dissipation] —
RoHS ステータス [DATA_NEEDED: RoHS status] unknown
トポロジー — Half-Bridge (2-in-1)
Package Platform — XHP 2 (XHPTM2)
Nominal DC Collector Current — 2000 A
IGBT Technology — TRENCHSTOP IGBT8 trench field-stop
Diode Technology — Emitter controlled 8 (EC8) soft recovery
Applications Grade — Industrial / traction / wind
Short-Circuit Capability — Short-circuit rated per datasheet
コレクタ-エミッタ間飽和電圧(Vce(sat)) — [DATA_NEEDED: VCE(sat) typical]
Gate-Emitter Voltage (VGES) — [DATA_NEEDED: maximum VGES]
Thermal Resistance Junction to Case (RthJC) — [DATA_NEEDED: RthJC per IGBT]
動作接合温度 — [DATA_NEEDED: Tj range]
Power Dissipation — [DATA_NEEDED: maximum Ptot]

データシート&リソース

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