FF1400R17T2P8 vs FF2000R17T2P8 비교

다음의 상세 나란히 비교: FF1400R17T2P8 제조: Infineon 및 FF2000R17T2P8 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 FF1400R17T2P8 FF2000R17T2P8
브랜드 Infineon Infineon
카테고리 IGBTs IGBTs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $680.00 $1,960.00
Technology TRENCHSTOP IGBT8, EC8 diode —
Configuration Half-bridge (Chopper 2) —
패키지 XHP 2 (AG-XHP2K17) —
Collector-Emitter Voltage (VCES) 1700 V 1700 V
Nominal Collector Current (IC nom) 1400 A —
Repetitive Peak Collector Current (ICRM) 2800 A —
Maximum Junction Temperature 175 C —
Integrated Temperature Sensor NTC thermistor NTC
Freewheeling Diode EC8 emitter controlled, soft fast recovery —
Qualification Industrial, per relevant tests of IEC 60747, 60749, 60068 —
실장 유형 Chassis Mount Chassis Mount Module
DC-Link Voltage Class Approx. 1000 V to 1100 V typical —
Module Stray Inductance [DATA_NEEDED: internal stray inductance] —
Thermal Resistance Junction to Case (RthJC IGBT) [DATA_NEEDED: RthJC per IGBT] —
Gate-Emitter Threshold Voltage [DATA_NEEDED: VGE(th)] —
전력 손실 (Ptot) [DATA_NEEDED: total power dissipation] —
RoHS 상태 [DATA_NEEDED: RoHS status] unknown
토폴로지 — Half-Bridge (2-in-1)
Package Platform — XHP 2 (XHPTM2)
Nominal DC Collector Current — 2000 A
IGBT Technology — TRENCHSTOP IGBT8 trench field-stop
Diode Technology — Emitter controlled 8 (EC8) soft recovery
Applications Grade — Industrial / traction / wind
Short-Circuit Capability — Short-circuit rated per datasheet
컬렉터-이미터 포화 전압 (Vce(sat)) — [DATA_NEEDED: VCE(sat) typical]
Gate-Emitter Voltage (VGES) — [DATA_NEEDED: maximum VGES]
Thermal Resistance Junction to Case (RthJC) — [DATA_NEEDED: RthJC per IGBT]
동작 접합 온도 — [DATA_NEEDED: Tj range]
Power Dissipation — [DATA_NEEDED: maximum Ptot]

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