IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon
Référence : IAUC120N04S6N010ATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.5764 | $1,58 |
| 10 | $1.42 | $14,20 |
| 100 | $1.18 | $118,00 |
| 500 | $0.95 | $475,00 |
| 1 000 | $0.81 | $810,00 |
| 5 000 | $0.68 | $3 400,00 |
IAUC120N04S6N010ATMA1 Présentation
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used as the primary switching element in DC-DC converters, motor drives, and load-management circuits. It belongs to the broader power-semiconductor hierarchy: power MOSFET -> discrete semiconductor -> active electronic component. The 40 V OptiMOS 6 family specifically targets 12 V/24 V automotive and industrial bus rails where high current and very low conduction loss are required.
Key specifications include 40 V drain-source breakdown (V(BR)DSS), 1.03 mΩ typical RDS(on) at 10 V VGS (per LCSC datasheet excerpt), 3 V typical threshold voltage (VGS(th)) measured at 90 µA, and an AEC-Q101 qualified die intended for under-the-hood and chassis safety applications. The PG-TDSON-8-34 package exposes the drain for direct PCB heatsinking via a thermal pad, enabling sustained high-current operation.
The OptiMOS 6 platform improves figure-of-merit (RDS(on) x Qg) versus OptiMOS 5 by approximately 30%, reducing both conduction and switching losses. This efficiency gain is particularly valuable in high-frequency synchronous rectification and automotive 48 V mild-hybrid architectures where every milliohm of RDS(on) translates directly into thermal and fuel-economy budgets.
Typical applications include automotive 12 V/24 V brushless DC (BLDC) motor drives, electronic power steering (EPS), body-electronics load switches, DC-DC converter high-side switches, and reverse-polarity protection circuits. The part is also well suited to industrial high-current point-of-load regulators.
When designing with this MOSFET, ensure the PCB thermal pad receives a copper pour of at least 1 sq. cm per ampere of continuous load, and keep the gate-drive loop compact to minimise ringing. VGS must be driven above 10 V to achieve the datasheet 1 mΩ RDS(on); driving below 8 V significantly increases losses.
Alternatives de remplacement direct pour IAUC120N04S6N010ATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IAUC120N04S6N010ATMA1 (même facteur de forme et même empreinte) — différant par Package, Automotive Qualification, Technology, Operating Temperature Range, Mounting Type.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IAUC120N04S6N009ATMA1
✅ Remplacement direct✓ En stock
$1.6 / unité
Voir la fiche technique →IAUCN04S7N015GATMA1
✅ Remplacement direct✓ En stock
$2.21 / unité
Voir la fiche technique →IAUCN04S7L042GATMA1
✅ Remplacement direct✓ En stock
$0.86 / unité
Voir la fiche technique →IAUCN04S7N019GATMA1
✅ Remplacement direct✓ En stock
$0.82 / unité
Voir la fiche technique →IAUCN04S7N027GATMA1
✅ Remplacement direct✓ En stock
$0.72 / unité
Voir la fiche technique →ISC151N08NM6ATMA1
✅ Remplacement direct✓ En stock
$0.78 / unité
Voir la fiche technique →IAUC120N04S6N010ATMA1 Valeurs maximales et caractéristiques électriques
| FET Type | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | 40 V |
| Continuous Drain Current (Id, Tc) | 150 A |
| Power Dissipation (Pd, Tc) | 150 W |
| RDS(on) at VGS=10V (typ) | 1.0 mΩ |
| RDS(on) at VGS=10V (max per LCSC excerpt) | 1.03 mΩ |
| Gate-Source Threshold (VGS(th), typ) | 3 V (at 90 µA) |
| Technology | OptiMOS 6 |
| Boîtier | PG-TDSON-8-34 (5x6 mm leadless) |
| Type de montage | Surface Mount |
| Automotive Qualification | AEC-Q101 |
| Plage de température de fonctionnement | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) |
| Niveau MSL | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| Statut RoHS | Compliant |
| Gate Drive Recommendation | 10 V VGS for full RDS(on) spec |
| Polarity | Single N-channel |
Configuration des broches de IAUC120N04S6N010ATMA1
| Broche 1 | Gate — Gate drive input |
| Broche 2 | Source — Source connection |
| Broche 3 | Source — Source connection |
| Broche 4 | Source — Source connection |
| Broche 5 | Source / NC — Source or no-connect (verify per lot) |
| Broche 6 | Source / NC — Source or no-connect (verify per lot) |
| Broche 7 | Source — Source connection |
| Broche 8 | Source — Source connection |
Zone de fonctionnement sûr (DC)
Applications typiques
IAUC120N04S6N010ATMA1 convient pour 6 applications: Automotive 12V/24V BLDC Motor Drive, Electronic Power Steering (EPS) High-Side Switch, 48V Mild-Hybrid DC-DC Buck Stage (with voltage derating), Industrial High-Current Load Switch / Hot-Swap, Body Electronics Load Switch (Lighting, Heaters), Synchronous Rectifier for Point-of-Load (POL) Converters.
Automotive 12V/24V BLDC Motor Drive
The IAUC120N04S6N010ATMA1 is well suited to three-phase brushless DC motor inverter stages in 12 V and 24 V automotive systems such as water pumps, oil pumps, HVAC blowers, and electric fans. Its 1.0 mΩ typical RDS(on) at 10 V VGS minimises conduction loss in the high-side and low-side synchronous-rectifier positions, while the 150 A continuous Tc rating provides generous thermal margin for the repetitive peak currents of trapezoidal or FOC commutation. AEC-Q101 qualification makes it directly acceptable for under-the-hood deployment. Used as the low-side FET, it typically dissipates 5-10 W at 50 A RMS, easily handled by the exposed thermal pad with 1 sq. cm of copper. Compared with a 60 V/80 V part of the same footprint, this 40 V device trades headroom for ~20% lower RDS(on), which directly extends efficiency and battery-run time in stop-start vehicles.
Recommandé
Electronic Power Steering (EPS) High-Side Switch
In EPS racks, the IAUC120N04S6N010ATMA1 can serve as the high-side disconnect or reverse-battery protection switch on the 12 V bus feeding the steering-assist motor. Its 1.0 mΩ RDS(on) keeps continuous voltage drop below 50 mV at 50 A, preserving torque accuracy and avoiding nuisance diagnostic fault codes. The 40 V V(BR)DSS handles load-dump transients up to 35 V when paired with a TVS clamp. AEC-Q101 qualification satisfies functional-safety documentation. PCB thermal pad of at least 25x25 mm copper keeps RthJA below 35 °C/W, supporting continuous 80 A operation at TA=85 °C. Compared with mechanical relays, this solid-state switch offers silent operation, longer life, and faster fault response in safety-critical EPS loops.
Recommandé
48V Mild-Hybrid DC-DC Buck Stage (with voltage derating)
For 48 V mild-hybrid powertrain DC-DC converters stepping down to 12 V, the IAUC120N04S6N010ATMA1 must be derated to 80% of its 40 V rating, leaving ~32 V working voltage — typically marginal. It is best used only on the 12 V low-voltage side of the converter where it shines. Here, switching at 100-200 kHz with 50 A RMS, the 1.0 mΩ RDS(on) keeps synchronous-rectifier conduction loss below 3 W per switch, supporting >97% converter efficiency. The OptiMOS 6 figure-of-merit improvement over OptiMOS 5 directly cuts switching loss, easing the thermal budget of the 12 V stage. Compared with the previous-generation IAUC120N04S6N009ATMA1, this part reduces total stage loss by ~20%.
Recommandé
Industrial High-Current Load Switch / Hot-Swap
The IAUC120N04S6N010ATMA1 fits 24 V industrial load-disconnect and hot-swap circuits where a low-RDS(on) N-channel FET is needed to limit inrush and provide reverse-polarity protection. Its 1.0 mΩ RDS(on) at 10 V VGS means a 100 A load sees only 100 mV drop, minimising steady-state dissipation. The 150 A continuous Tc rating handles brief startup surges of 300+ A that would trip slower protection circuits. The exposed thermal pad allows direct PCB heatsinking into inner-layer copper planes. Compared with a standard DPAK MOSFET at the same current, this PG-TDSON-8-34 part achieves ~40% lower RDS(on) in the same board area, enabling smaller, cooler designs.
Recommandé
Body Electronics Load Switch (Lighting, Heaters)
For automotive body-control modules driving high-current loads such as headlights, seat heaters, and heated mirrors, the IAUC120N04S6N010ATMA1 provides a robust AEC-Q101 qualified switching element. Its 1.0 mΩ RDS(on) minimises steady-state loss at the 10-30 A loads typical of these subsystems, reducing PCB temperature rise and improving fuel economy by easing alternator load. The 40 V rating easily survives 24 V jump-start and load-dump events. Compared with smart high-side switches, this discrete MOSFET offers lower RDS(on) at lower cost when the application does not require integrated diagnostics — a common trade-off in cost-sensitive body modules.
Recommandé
Synchronous Rectifier for Point-of-Load (POL) Converters
The IAUC120N04S6N010ATMA1 works as the synchronous-rectifier low-side FET in 12 V-input, 30-100 A buck converters for telecom and server point-of-load rails. Its 1.0 mΩ RDS(on) and OptiMOS 6 low Qg reduce both conduction and switching loss at 300-500 kHz switching frequencies, supporting >95% efficiency at full load. The PG-TDSON-8-34 footprint keeps the converter compact while the exposed pad enables direct PCB heatsinking into inner copper planes. Compared with OptiMOS 5 generation parts, this OptiMOS 6 device reduces figure-of-merit by ~30%, allowing either higher switching frequency (smaller magnetics) or higher output current (more power) from the same board.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IAUC120N04S6N010ATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IAUC120N04S6N009ATMA1 | IAUCN04S7N015GATMA1 | IAUCN04S7L042GATMA1 | IAUCN04S7N019GATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-34 (5x6 mm) | PG-TDSON-8-34 (5x6 mm) - same | PG-TDSON-8-34 (5x6 mm) - same | PG-TDSON-8-34 (5x6 mm) - same | PG-TDSON-8-34 (5x6 mm) - same | PG-TDSON-8-34 (5x6 mm) - same |
| V(BR)DSS | 40 V | 40 V | 40 V | 40 V | 40 V | 80 V |
| Technology Generation | OptiMOS 6 | OptiMOS 5 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 6 |
| Automotive Qualified | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Principaux différenciateurs
- Lowest RDS(on) in the Infineon 40 V 5x6 mm family (vs IAUC120N04S6N009ATMA1)
- Better figure-of-merit than newer OptiMOS 7 siblings (vs IAUCN04S7N015GATMA1)
- 40 V rating is tighter and lower-loss than 80 V upgrade (vs ISC151N08NM6ATMA1)
Notes de conception
Estimated: at 50 A continuous load with 1.0 mΩ RDS(on), conduction loss is roughly P = I² × R = 50² × 0.001 = 2.5 W per MOSFET. Two FETs in a half-bridge at this load dissipate ~5 W total, easily handled by the PG-TDSON-8-34 thermal pad with 25x25 mm of 2 oz copper. For continuous 100 A operation, increase the copper pour to at least 50x50 mm or attach an external heatsink to keep junction below 150 °C. Always consult the datasheet SOA curves before pushing beyond rated current.
Keep the gate-drive loop (gate pin to gate-driver ground return) as small as physically possible — ideally under 10 mm total path length. Place a 10-100 Ω gate resistor close to the gate pin to dampen parasitic ringing caused by the gate-source capacitance and PCB trace inductance. Route high-current source and drain paths on wide copper pours directly into the thermal pad. Use multiple vias in the thermal pad (typically 0.3 mm drill, 0.6 mm pitch) to conduct heat into inner copper planes.
Driving VGS below 8 V significantly increases RDS(on) — for example, at 6 V VGS the RDS(on) may rise 50-100%, doubling conduction loss. Always use a gate driver that swings to at least 10 V. Also verify that the source current path does not share impedance with the gate-driver ground return, or the Miller current will create VGS bounce that can falsely turn the FET partially on during switching transients.
Informations de conformité
AEC-Q101 (automotive MOSFET grade) per Infineon OptiMOS 6 family. RoHS and REACH compliant per Infineon product page. Lead-free reflow compatible per MSL1 JEDEC J-STD-020.
