IKD04N60RATMA1 vs IKD10N60RC2ATMA1 Comparaison
Comparaison détaillée côte à côte de IKD04N60RATMA1 par Infineon et IKD10N60RC2ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IKD04N60RATMA1 | IKD10N60RC2ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | IGBTs | IGBTs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,92 | $0,83 |
| Manufacturer | Infineon Technologies | — |
| Series | RC-Drives | — |
| Type de transistor | IGBT - Trench Field Stop with integrated diode | — |
| Collector-Emitter Voltage (VCES) | 600 V | — |
| Continuous Collector Current (IC) at TC=25C | 8 A | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: pulsed collector current] | — |
| Power Dissipation (PD) at TC=25C | 75 W | — |
| Gate-Emitter Voltage (VGES) | [DATA_NEEDED: gate-emitter voltage rating] | — |
| VCE(sat) at IC=4A, VGE=15V | [DATA_NEEDED: VCE(sat) typical at 4A] | — |
| Gate Threshold Voltage (VGE(th)) | [DATA_NEEDED: VGE(th)] | — |
| Integrated Anti-Parallel Diode | Yes | — |
| Plage de température de fonctionnement | -40C to +150C | -40 C to +175 C (junction) |
| Boîtier | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK, surface mount) |
| Type de montage | Surface Mount | Surface Mount |
| Nombre de broches | 3 (2 leads + tab) | — |
| Configuration | Single | — |
| Niveau MSL | 1 | — |
| Statut RoHS | Compliant | Compliant |
| Technology Target | Consumer drives / motor control | — |
| Collector-Emitter Voltage (V_CE) | — | 600 V |
| Continuous Collector Current (I_C nom) | — | 10 A |
| Pulsed Collector Current (I_Cp) | — | 18.8 A |
| Maximum Power Dissipation (P_tot) | — | 79 W |
| Technology | — | TRENCHSTOP RC2 (Trench Field Stop IGBT with monolithically integrated diode) |
| Integrated Diode | — | Yes - reverse-conducting 2-diode co-packed |
| Gate-Emitter Voltage (V_GE) | — | [DATA_NEEDED: recommended V_GE value] |
| V_CE(sat) at I_C | — | [DATA_NEEDED: typical V_CE(sat)] |
| Switching Frequency (typical) | — | 10 - 30 kHz (hard-switching) |
| Short-Circuit Withstand Time | — | [DATA_NEEDED: t_sc rating] |
| Qualification | — | Industrial (qualified per Infineon product validation) |