IKD04N60RATMA1 vs IKD10N60RC2ATMA1 비교

다음의 상세 나란히 비교: IKD04N60RATMA1 제조: Infineon 및 IKD10N60RC2ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IKD10N60RC2ATMA1 IKD10N60RC2ATMA1 - 600V 10A RC2 IGBT w/ Diode | Infineon

IKD10N60RC2ATMA1 - 600V 10A RC2 IGBT w/ Diode | Infineon

IKD10N60RC2ATMA1 ✓ 활성

사양 비교

파라미터 IKD04N60RATMA1 IKD10N60RC2ATMA1
브랜드 Infineon Infineon
카테고리 IGBTs IGBTs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.92 $0.83
Manufacturer Infineon Technologies —
Series RC-Drives —
트랜지스터 유형 IGBT - Trench Field Stop with integrated diode —
Collector-Emitter Voltage (VCES) 600 V —
Continuous Collector Current (IC) at TC=25C 8 A —
Pulsed Collector Current (ICM) [DATA_NEEDED: pulsed collector current] —
Power Dissipation (PD) at TC=25C 75 W —
Gate-Emitter Voltage (VGES) [DATA_NEEDED: gate-emitter voltage rating] —
VCE(sat) at IC=4A, VGE=15V [DATA_NEEDED: VCE(sat) typical at 4A] —
Gate Threshold Voltage (VGE(th)) [DATA_NEEDED: VGE(th)] —
Integrated Anti-Parallel Diode Yes —
동작 온도 범위 -40C to +150C -40 C to +175 C (junction)
패키지 PG-TO252-3 (DPAK) PG-TO252-3 (DPAK, surface mount)
실장 유형 Surface Mount Surface Mount
핀 수 3 (2 leads + tab) —
Configuration Single —
MSL 레벨 1 —
RoHS 상태 Compliant Compliant
Technology Target Consumer drives / motor control —
Collector-Emitter Voltage (V_CE) — 600 V
Continuous Collector Current (I_C nom) — 10 A
Pulsed Collector Current (I_Cp) — 18.8 A
Maximum Power Dissipation (P_tot) — 79 W
Technology — TRENCHSTOP RC2 (Trench Field Stop IGBT with monolithically integrated diode)
Integrated Diode — Yes - reverse-conducting 2-diode co-packed
Gate-Emitter Voltage (V_GE) — [DATA_NEEDED: recommended V_GE value]
V_CE(sat) at I_C — [DATA_NEEDED: typical V_CE(sat)]
Switching Frequency (typical) — 10 - 30 kHz (hard-switching)
Short-Circuit Withstand Time — [DATA_NEEDED: t_sc rating]
Qualification — Industrial (qualified per Infineon product validation)

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청