IKD04N60RATMA1 vs IKD10N60RC2ATMA1 Comparison

Detailed side-by-side comparison of IKD04N60RATMA1 by Infineon and IKD10N60RC2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IKD04N60RATMA1 IKD04N60RATMA1 - 600V 8A RC-Drives IGBT w/ Diode | Infineon

IKD04N60RATMA1 - 600V 8A RC-Drives IGBT w/ Diode | Infineon

IKD04N60RATMA1 βœ“ Active
Infineon
IKD10N60RC2ATMA1 IKD10N60RC2ATMA1 - 600V 10A RC2 IGBT w/ Diode | Infineon

IKD10N60RC2ATMA1 - 600V 10A RC2 IGBT w/ Diode | Infineon

IKD10N60RC2ATMA1 βœ“ Active

Specification Comparison

Parameter IKD04N60RATMA1 IKD10N60RC2ATMA1
Brand Infineon Infineon
Category IGBTs IGBTs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.92 $0.83
Manufacturer Infineon Technologies β€”
Series RC-Drives β€”
Transistor Type IGBT - Trench Field Stop with integrated diode β€”
Collector-Emitter Voltage (VCES) 600 V β€”
Continuous Collector Current (IC) at TC=25C 8 A β€”
Pulsed Collector Current (ICM) [DATA_NEEDED: pulsed collector current] β€”
Power Dissipation (PD) at TC=25C 75 W β€”
Gate-Emitter Voltage (VGES) [DATA_NEEDED: gate-emitter voltage rating] β€”
VCE(sat) at IC=4A, VGE=15V [DATA_NEEDED: VCE(sat) typical at 4A] β€”
Gate Threshold Voltage (VGE(th)) [DATA_NEEDED: VGE(th)] β€”
Integrated Anti-Parallel Diode Yes β€”
Operating Temperature Range -40C to +150C -40 C to +175 C (junction)
Package PG-TO252-3 (DPAK) PG-TO252-3 (DPAK, surface mount)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (2 leads + tab) β€”
Configuration Single β€”
MSL Level 1 β€”
RoHS Status Compliant Compliant
Technology Target Consumer drives / motor control β€”
Collector-Emitter Voltage (V_CE) β€” 600 V
Continuous Collector Current (I_C nom) β€” 10 A
Pulsed Collector Current (I_Cp) β€” 18.8 A
Maximum Power Dissipation (P_tot) β€” 79 W
Technology β€” TRENCHSTOP RC2 (Trench Field Stop IGBT with monolithically integrated diode)
Integrated Diode β€” Yes - reverse-conducting 2-diode co-packed
Gate-Emitter Voltage (V_GE) β€” [DATA_NEEDED: recommended V_GE value]
V_CE(sat) at I_C β€” [DATA_NEEDED: typical V_CE(sat)]
Switching Frequency (typical) β€” 10 - 30 kHz (hard-switching)
Short-Circuit Withstand Time β€” [DATA_NEEDED: t_sc rating]
Qualification β€” Industrial (qualified per Infineon product validation)

Datasheets & Resources

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