IKD04N60RATMA1 vs IKD10N60RC2ATMA1 Comparação
Comparação detalhada lado a lado de IKD04N60RATMA1 por Infineon e IKD10N60RC2ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IKD04N60RATMA1 | IKD10N60RC2ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | IGBTs | IGBTs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,92 | $0,83 |
| Manufacturer | Infineon Technologies | — |
| Series | RC-Drives | — |
| Tipo de transistor | IGBT - Trench Field Stop with integrated diode | — |
| Collector-Emitter Voltage (VCES) | 600 V | — |
| Continuous Collector Current (IC) at TC=25C | 8 A | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: pulsed collector current] | — |
| Power Dissipation (PD) at TC=25C | 75 W | — |
| Gate-Emitter Voltage (VGES) | [DATA_NEEDED: gate-emitter voltage rating] | — |
| VCE(sat) at IC=4A, VGE=15V | [DATA_NEEDED: VCE(sat) typical at 4A] | — |
| Gate Threshold Voltage (VGE(th)) | [DATA_NEEDED: VGE(th)] | — |
| Integrated Anti-Parallel Diode | Yes | — |
| Faixa de temperatura de operação | -40C to +150C | -40 C to +175 C (junction) |
| Encapsulamento | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK, surface mount) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Contagem de pinos | 3 (2 leads + tab) | — |
| Configuration | Single | — |
| Nível MSL | 1 | — |
| Status RoHS | Compliant | Compliant |
| Technology Target | Consumer drives / motor control | — |
| Collector-Emitter Voltage (V_CE) | — | 600 V |
| Continuous Collector Current (I_C nom) | — | 10 A |
| Pulsed Collector Current (I_Cp) | — | 18.8 A |
| Maximum Power Dissipation (P_tot) | — | 79 W |
| Technology | — | TRENCHSTOP RC2 (Trench Field Stop IGBT with monolithically integrated diode) |
| Integrated Diode | — | Yes - reverse-conducting 2-diode co-packed |
| Gate-Emitter Voltage (V_GE) | — | [DATA_NEEDED: recommended V_GE value] |
| V_CE(sat) at I_C | — | [DATA_NEEDED: typical V_CE(sat)] |
| Switching Frequency (typical) | — | 10 - 30 kHz (hard-switching) |
| Short-Circuit Withstand Time | — | [DATA_NEEDED: t_sc rating] |
| Qualification | — | Industrial (qualified per Infineon product validation) |