IPP045N10N3GXKSA1 vs IPP100N12S305AKSA1 Comparaison
Comparaison détaillée côte à côte de IPP045N10N3GXKSA1 par Infineon et IPP100N12S305AKSA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon
IPP100N12S305AKSA1 ✓ ActifComparaison des spécifications
| Paramètre | IPP045N10N3GXKSA1 | IPP100N12S305AKSA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,20 | $2,05 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPP045N10N3GXKSA1 | — |
| Technology | OptiMOS 3 | OptiMOS trench |
| Type de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C | 100 A | — |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=100°C | [DATA_NEEDED: I_D at TC=100C] | — |
| Pulsed Drain Current (I<sub>D,pulse</sub>) | 137 A | — |
| On-Resistance R<sub>DS(on)</sub> max at V<sub>GS</sub>=10V | 4.5 mΩ | — |
| Gate Threshold Voltage V<sub>GS(th)</sub> | 3.5 V (typical, per LCSC listing) | — |
| Power Dissipation P<sub>D</sub> at T<sub>C</sub>=25°C | 214 W | — |
| Boîtier | TO-220-3 (PG-TO220-3) through-hole | TO-220 (PG-TO220-3-1) |
| Plage de température de fonctionnement | -55 °C to +175 °C (junction, typical MOSFET limit) | — |
| Type de montage | Through Hole | Through Hole |
| Statut RoHS | Compliant (per LCSC datasheet excerpt) | — |
| Lead-Free | Yes (Infineon G/GX part suffix) | — |
| Niveau MSL | N/A (through-hole package) | — |
| Drain-Source Voltage (VDS) | — | 120 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Courant de drain pulsé | — | [DATA_NEEDED: pulsed ID value] |
| Maximum Power Dissipation (Ptot) at Tc | — | 300 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Avalanche Energy, Single Pulse | — | [DATA_NEEDED: EAS] |
| Température de jonction en fonctionnement | — | -55 °C to +175 °C |
| Nombre de broches | — | 3 |
| MSL Moisture Sensitivity Level | — | 1 (260 °C peak reflow) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Tested | — | 100% tested |
| RoHS Compliance | — | Compliant (Green product) |