IPP045N10N3GXKSA1 vs IPP100N12S305AKSA1 对比

详细并排对比 IPP045N10N3GXKSA1 出自 Infineon 和 IPP100N12S305AKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPP100N12S305AKSA1 IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon

IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon

IPP100N12S305AKSA1 ✓ 量产中

规格对比

参数 IPP045N10N3GXKSA1 IPP100N12S305AKSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.20 $2.05
Manufacturer Infineon Technologies —
Part Number IPP045N10N3GXKSA1 —
Technology OptiMOS 3 OptiMOS trench
晶体管类型 N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (V<sub>DS</sub>) 100 V —
Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C 100 A —
Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=100°C [DATA_NEEDED: I_D at TC=100C] —
Pulsed Drain Current (I<sub>D,pulse</sub>) 137 A —
On-Resistance R<sub>DS(on)</sub> max at V<sub>GS</sub>=10V 4.5 mΩ —
Gate Threshold Voltage V<sub>GS(th)</sub> 3.5 V (typical, per LCSC listing) —
Power Dissipation P<sub>D</sub> at T<sub>C</sub>=25°C 214 W —
封装 TO-220-3 (PG-TO220-3) through-hole TO-220 (PG-TO220-3-1)
工作温度范围 -55 °C to +175 °C (junction, typical MOSFET limit) —
安装类型 Through Hole Through Hole
RoHS 状态 Compliant (per LCSC datasheet excerpt) —
Lead-Free Yes (Infineon G/GX part suffix) —
MSL 等级 N/A (through-hole package) —
Drain-Source Voltage (VDS) — 120 V
Continuous Drain Current (ID) at Tc — 100 A
脉冲漏极电流 — [DATA_NEEDED: pulsed ID value]
Maximum Power Dissipation (Ptot) at Tc — 300 W
Gate-Source Voltage (VGS) max — ±20 V
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Avalanche Energy, Single Pulse — [DATA_NEEDED: EAS]
工作结温 — -55 °C to +175 °C
引脚数量 — 3
MSL Moisture Sensitivity Level — 1 (260 °C peak reflow)
Automotive Qualification — AEC-Q101 qualified
Avalanche Tested — 100% tested
RoHS Compliance — Compliant (Green product)

数据手册与资源

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