IPP045N10N3GXKSA1 vs IPP100N12S305AKSA1 Сравнение
Подробное сравнение бок о бок IPP045N10N3GXKSA1 от Infineon и IPP100N12S305AKSA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPP045N10N3GXKSA1 - 100V 4.5mΩ OptiMOS 3 Power MOSFET | Infineon
IPP045N10N3GXKSA1 ✓ АктивенInfineon
IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon
IPP100N12S305AKSA1 ✓ АктивенСравнение характеристик
| Параметр | IPP045N10N3GXKSA1 | IPP100N12S305AKSA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,20 | $2,05 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPP045N10N3GXKSA1 | — |
| Technology | OptiMOS 3 | OptiMOS trench |
| Тип транзистора | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C | 100 A | — |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=100°C | [DATA_NEEDED: I_D at TC=100C] | — |
| Pulsed Drain Current (I<sub>D,pulse</sub>) | 137 A | — |
| On-Resistance R<sub>DS(on)</sub> max at V<sub>GS</sub>=10V | 4.5 mΩ | — |
| Gate Threshold Voltage V<sub>GS(th)</sub> | 3.5 V (typical, per LCSC listing) | — |
| Power Dissipation P<sub>D</sub> at T<sub>C</sub>=25°C | 214 W | — |
| Корпус | TO-220-3 (PG-TO220-3) through-hole | TO-220 (PG-TO220-3-1) |
| Диапазон рабочих температур | -55 °C to +175 °C (junction, typical MOSFET limit) | — |
| Тип монтажа | Through Hole | Through Hole |
| Статус RoHS | Compliant (per LCSC datasheet excerpt) | — |
| Lead-Free | Yes (Infineon G/GX part suffix) | — |
| Уровень MSL | N/A (through-hole package) | — |
| Drain-Source Voltage (VDS) | — | 120 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Импульсный ток стока | — | [DATA_NEEDED: pulsed ID value] |
| Maximum Power Dissipation (Ptot) at Tc | — | 300 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Avalanche Energy, Single Pulse | — | [DATA_NEEDED: EAS] |
| Рабочая температура перехода | — | -55 °C to +175 °C |
| Число выводов | — | 3 |
| MSL Moisture Sensitivity Level | — | 1 (260 °C peak reflow) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Tested | — | 100% tested |
| RoHS Compliance | — | Compliant (Green product) |