IRF7105PBF vs IRF7306TRPBF Comparaison
Comparaison détaillée côte à côte de IRF7105PBF par Infineon et IRF7306TRPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRF7105PBF | IRF7306TRPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,61 | $0,55 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7105PBF | — |
| FET Type | N-Channel and P-Channel (Dual, Complementary) | — |
| Technology | HEXFET (Fifth Generation) | HEXFET Power MOSFET (Generation V) |
| N-Channel VDS (Drain-Source Voltage) | 25 V | — |
| P-Channel VDS (Drain-Source Voltage) | 25 V | — |
| N-Channel Continuous Drain Current (ID) | 3.5 A | — |
| P-Channel Continuous Drain Current (ID) | 2.3 A | — |
| Total Package Power Dissipation (PD) | 2 W | — |
| Boîtier / Format | 8-SOIC (SO-8) | — |
| Type de montage | Surface Mount | Surface Mount |
| Nombre de broches | 8 | — |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| RoHS Compliance | Compliant | Yes (PBF suffix indicates Pb-free) |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Qualification | Industrial | Consumer market qualification standards (per IR/Infineon datasheet) |
| Soldering Compatibility | Vapor Phase, Infrared, Wave | — |
| dv/dt Rating | Dynamic (rated per datasheet) | — |
| Polarity | — | P-Channel (dual) |
| Number of Channels | — | 2 (independent, in single package) |
| Drain-to-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) | — | -3.6 A at 25°C |
| On-Resistance RDS(on) max | — | 100 mOhm at VGS = -10 V |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg total] |
| Maximum Power Dissipation | — | 2 W at TA = 25°C |
| Plage de température de fonctionnement | — | -55°C to +150°C (junction) |
| Boîtier | — | 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) |
| Packaging | — | Tape & Reel (TR) |
| Niveau MSL | — | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | — | Yes (ruggedized device per datasheet) |