IRF7105PBF vs IRF7306TRPBF 비교

다음의 상세 나란히 비교: IRF7105PBF 제조: Infineon 및 IRF7306TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRF7105PBF IRF7306TRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.61 $0.55
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF7105PBF —
FET Type N-Channel and P-Channel (Dual, Complementary) —
Technology HEXFET (Fifth Generation) HEXFET Power MOSFET (Generation V)
N-Channel VDS (Drain-Source Voltage) 25 V —
P-Channel VDS (Drain-Source Voltage) 25 V —
N-Channel Continuous Drain Current (ID) 3.5 A —
P-Channel Continuous Drain Current (ID) 2.3 A —
Total Package Power Dissipation (PD) 2 W —
패키지 / 케이스 8-SOIC (SO-8) —
실장 유형 Surface Mount Surface Mount
핀 수 8 —
Lead-Free / Halogen-Free Yes / Yes —
RoHS Compliance Compliant Yes (PBF suffix indicates Pb-free)
MSL (Moisture Sensitivity Level) MSL1 —
Qualification Industrial Consumer market qualification standards (per IR/Infineon datasheet)
Soldering Compatibility Vapor Phase, Infrared, Wave —
dv/dt Rating Dynamic (rated per datasheet) —
Polarity — P-Channel (dual)
Number of Channels — 2 (independent, in single package)
Drain-to-Source Voltage (VDS) — -30 V
Continuous Drain Current (ID) — -3.6 A at 25°C
On-Resistance RDS(on) max — 100 mOhm at VGS = -10 V
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg total]
Maximum Power Dissipation — 2 W at TA = 25°C
동작 온도 범위 — -55°C to +150°C (junction)
패키지 — 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width)
Packaging — Tape & Reel (TR)
MSL 레벨 — 1 (per JEDEC J-STD-020)
Avalanche Rated — Yes (ruggedized device per datasheet)

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