IRF7105PBF vs IRF7306TRPBF Vergleich
Detaillierter Direktvergleich von IRF7105PBF von Infineon und IRF7306TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF7105PBF | IRF7306TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,61 | $0,55 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7105PBF | — |
| FET Type | N-Channel and P-Channel (Dual, Complementary) | — |
| Technology | HEXFET (Fifth Generation) | HEXFET Power MOSFET (Generation V) |
| N-Channel VDS (Drain-Source Voltage) | 25 V | — |
| P-Channel VDS (Drain-Source Voltage) | 25 V | — |
| N-Channel Continuous Drain Current (ID) | 3.5 A | — |
| P-Channel Continuous Drain Current (ID) | 2.3 A | — |
| Total Package Power Dissipation (PD) | 2 W | — |
| Gehäuse / Bauform | 8-SOIC (SO-8) | — |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 8 | — |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| RoHS Compliance | Compliant | Yes (PBF suffix indicates Pb-free) |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Qualification | Industrial | Consumer market qualification standards (per IR/Infineon datasheet) |
| Soldering Compatibility | Vapor Phase, Infrared, Wave | — |
| dv/dt Rating | Dynamic (rated per datasheet) | — |
| Polarity | — | P-Channel (dual) |
| Number of Channels | — | 2 (independent, in single package) |
| Drain-to-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) | — | -3.6 A at 25°C |
| On-Resistance RDS(on) max | — | 100 mOhm at VGS = -10 V |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg total] |
| Maximum Power Dissipation | — | 2 W at TA = 25°C |
| Betriebstemperaturbereich | — | -55°C to +150°C (junction) |
| Gehäuse | — | 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) |
| Packaging | — | Tape & Reel (TR) |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | — | Yes (ruggedized device per datasheet) |