IRF7105PBF vs IRF7306TRPBF 对比

详细并排对比 IRF7105PBF 出自 Infineon 和 IRF7306TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRF7105PBF IRF7306TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.61 $0.55
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF7105PBF —
FET Type N-Channel and P-Channel (Dual, Complementary) —
Technology HEXFET (Fifth Generation) HEXFET Power MOSFET (Generation V)
N-Channel VDS (Drain-Source Voltage) 25 V —
P-Channel VDS (Drain-Source Voltage) 25 V —
N-Channel Continuous Drain Current (ID) 3.5 A —
P-Channel Continuous Drain Current (ID) 2.3 A —
Total Package Power Dissipation (PD) 2 W —
封装 / 外壳 8-SOIC (SO-8) —
安装类型 Surface Mount Surface Mount
引脚数量 8 —
Lead-Free / Halogen-Free Yes / Yes —
RoHS Compliance Compliant Yes (PBF suffix indicates Pb-free)
MSL (Moisture Sensitivity Level) MSL1 —
Qualification Industrial Consumer market qualification standards (per IR/Infineon datasheet)
Soldering Compatibility Vapor Phase, Infrared, Wave —
dv/dt Rating Dynamic (rated per datasheet) —
Polarity — P-Channel (dual)
Number of Channels — 2 (independent, in single package)
Drain-to-Source Voltage (VDS) — -30 V
Continuous Drain Current (ID) — -3.6 A at 25°C
On-Resistance RDS(on) max — 100 mOhm at VGS = -10 V
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg total]
Maximum Power Dissipation — 2 W at TA = 25°C
工作温度范围 — -55°C to +150°C (junction)
封装 — 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width)
Packaging — Tape & Reel (TR)
MSL 等级 — 1 (per JEDEC J-STD-020)
Avalanche Rated — Yes (ruggedized device per datasheet)

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