IRF7105PBF vs IRF7306TRPBF Comparación
Comparación detallada lado a lado de IRF7105PBF por Infineon y IRF7306TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF7105PBF | IRF7306TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,61 | $0,55 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7105PBF | — |
| FET Type | N-Channel and P-Channel (Dual, Complementary) | — |
| Technology | HEXFET (Fifth Generation) | HEXFET Power MOSFET (Generation V) |
| N-Channel VDS (Drain-Source Voltage) | 25 V | — |
| P-Channel VDS (Drain-Source Voltage) | 25 V | — |
| N-Channel Continuous Drain Current (ID) | 3.5 A | — |
| P-Channel Continuous Drain Current (ID) | 2.3 A | — |
| Total Package Power Dissipation (PD) | 2 W | — |
| Encapsulado / Carcasa | 8-SOIC (SO-8) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 8 | — |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| RoHS Compliance | Compliant | Yes (PBF suffix indicates Pb-free) |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Qualification | Industrial | Consumer market qualification standards (per IR/Infineon datasheet) |
| Soldering Compatibility | Vapor Phase, Infrared, Wave | — |
| dv/dt Rating | Dynamic (rated per datasheet) | — |
| Polarity | — | P-Channel (dual) |
| Number of Channels | — | 2 (independent, in single package) |
| Drain-to-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) | — | -3.6 A at 25°C |
| On-Resistance RDS(on) max | — | 100 mOhm at VGS = -10 V |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg total] |
| Maximum Power Dissipation | — | 2 W at TA = 25°C |
| Rango de temperatura de funcionamiento | — | -55°C to +150°C (junction) |
| Encapsulado | — | 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) |
| Packaging | — | Tape & Reel (TR) |
| Nivel MSL | — | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | — | Yes (ruggedized device per datasheet) |