K3K8K80BM-JGCT vs K3KL8L80CM-MGCT Comparaison
Comparaison détaillée côte à côte de K3K8K80BM-JGCT par Samsung Electronics et K3KL8L80CM-MGCT par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K3K8K80BM-JGCT - Samsung LPDDR DRAM Memory IC | Samsung Electronics
K3K8K80BM-JGCT ✓ Actif
Comparaison des spécifications
| Paramètre | K3K8K80BM-JGCT | K3KL8L80CM-MGCT |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | DRAM |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3,10 | $0,00 |
| Manufacturer | Samsung Electronics | — |
| Product Family | K3K mobile DRAM (LPDDR) component series | — |
| Type de mémoire | Low Power DRAM (LPDDR) component | LPDDR5X SDRAM |
| Density | [DATA_NEEDED: die density in Gb] | 32 Gbit (4 GB) |
| Organisation de la mémoire | [DATA_NEEDED: x8/x16 organization] | x32 |
| Interface | [DATA_NEEDED: LPDDR4X or LPDDR5] | LPDDR5X (JEDEC LPDDR5 extension) |
| Maximum Data Rate | [DATA_NEEDED: Mbps] | — |
| Supply Voltage (VDD) | [DATA_NEEDED: core supply voltage] | — |
| Supply Voltage (VDDQ) | [DATA_NEEDED: I/O supply voltage] | — |
| Package Type | FBGA (Ball Grid Array) | — |
| Ball Count | [DATA_NEEDED: package ball count] | — |
| Type de montage | Surface Mount | Surface Mount |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| Speed Grade Suffix | J (per Samsung speed-grade coding) | — |
| Packing Suffix | CT (per Samsung packing-code convention) | — |
| Statut RoHS | [DATA_NEEDED: RoHS compliance] | Compliant (per JLCPCB listing) |
| Niveau MSL | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL Level] |
| Max Data Rate | — | 7500 Mbps |
| Clock Frequency | — | 3750 MHz |
| Core Supply Voltage (VDD) | — | 1.05 V |
| I/O Supply Voltage (VDDQ) | — | 900 mV (500 mV low-power mode) |
| VDD2 Supply Voltage | — | 1.8 V |
| Boîtier | — | 315-ball FBGA |
| Application Segment | — | Mobile, Automotive, On-device AI, PC |
| Power Efficiency | — | ~20-25% improvement vs LPDDR5 (per Samsung) |