K3K8K80BM-JGCT vs K3KL8L80CM-MGCT 对比
详细并排对比 K3K8K80BM-JGCT 出自 Samsung Electronics 和 K3KL8L80CM-MGCT 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K3K8K80BM-JGCT - Samsung LPDDR DRAM Memory IC | Samsung Electronics
K3K8K80BM-JGCT ✓ 量产中
规格对比
| 参数 | K3K8K80BM-JGCT | K3KL8L80CM-MGCT |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.10 | $0.00 |
| Manufacturer | Samsung Electronics | — |
| Product Family | K3K mobile DRAM (LPDDR) component series | — |
| 存储器类型 | Low Power DRAM (LPDDR) component | LPDDR5X SDRAM |
| Density | [DATA_NEEDED: die density in Gb] | 32 Gbit (4 GB) |
| 存储组织 | [DATA_NEEDED: x8/x16 organization] | x32 |
| 接口 | [DATA_NEEDED: LPDDR4X or LPDDR5] | LPDDR5X (JEDEC LPDDR5 extension) |
| Maximum Data Rate | [DATA_NEEDED: Mbps] | — |
| Supply Voltage (VDD) | [DATA_NEEDED: core supply voltage] | — |
| Supply Voltage (VDDQ) | [DATA_NEEDED: I/O supply voltage] | — |
| Package Type | FBGA (Ball Grid Array) | — |
| Ball Count | [DATA_NEEDED: package ball count] | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| Speed Grade Suffix | J (per Samsung speed-grade coding) | — |
| Packing Suffix | CT (per Samsung packing-code convention) | — |
| RoHS 状态 | [DATA_NEEDED: RoHS compliance] | Compliant (per JLCPCB listing) |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL Level] |
| Max Data Rate | — | 7500 Mbps |
| Clock Frequency | — | 3750 MHz |
| Core Supply Voltage (VDD) | — | 1.05 V |
| I/O Supply Voltage (VDDQ) | — | 900 mV (500 mV low-power mode) |
| VDD2 Supply Voltage | — | 1.8 V |
| 封装 | — | 315-ball FBGA |
| Application Segment | — | Mobile, Automotive, On-device AI, PC |
| Power Efficiency | — | ~20-25% improvement vs LPDDR5 (per Samsung) |