K3K8K80BM-JGCT vs K3KL8L80CM-MGCT Vergleich
Detaillierter Direktvergleich von K3K8K80BM-JGCT von Samsung Electronics und K3KL8L80CM-MGCT von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K3K8K80BM-JGCT - Samsung LPDDR DRAM Memory IC | Samsung Electronics
K3K8K80BM-JGCT ✓ Aktiv
Spezifikationsvergleich
| Parameter | K3K8K80BM-JGCT | K3KL8L80CM-MGCT |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | DRAM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,10 | $0,00 |
| Manufacturer | Samsung Electronics | — |
| Product Family | K3K mobile DRAM (LPDDR) component series | — |
| Speichertyp | Low Power DRAM (LPDDR) component | LPDDR5X SDRAM |
| Density | [DATA_NEEDED: die density in Gb] | 32 Gbit (4 GB) |
| Speicherorganisation | [DATA_NEEDED: x8/x16 organization] | x32 |
| Schnittstelle | [DATA_NEEDED: LPDDR4X or LPDDR5] | LPDDR5X (JEDEC LPDDR5 extension) |
| Maximum Data Rate | [DATA_NEEDED: Mbps] | — |
| Supply Voltage (VDD) | [DATA_NEEDED: core supply voltage] | — |
| Supply Voltage (VDDQ) | [DATA_NEEDED: I/O supply voltage] | — |
| Package Type | FBGA (Ball Grid Array) | — |
| Ball Count | [DATA_NEEDED: package ball count] | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| Speed Grade Suffix | J (per Samsung speed-grade coding) | — |
| Packing Suffix | CT (per Samsung packing-code convention) | — |
| RoHS-Status | [DATA_NEEDED: RoHS compliance] | Compliant (per JLCPCB listing) |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL Level] |
| Max Data Rate | — | 7500 Mbps |
| Clock Frequency | — | 3750 MHz |
| Core Supply Voltage (VDD) | — | 1.05 V |
| I/O Supply Voltage (VDDQ) | — | 900 mV (500 mV low-power mode) |
| VDD2 Supply Voltage | — | 1.8 V |
| Gehäuse | — | 315-ball FBGA |
| Application Segment | — | Mobile, Automotive, On-device AI, PC |
| Power Efficiency | — | ~20-25% improvement vs LPDDR5 (per Samsung) |