K3K8K80BM-JGCT vs K3KL8L80CM-MGCT 비교
다음의 상세 나란히 비교: K3K8K80BM-JGCT 제조: Samsung Electronics 및 K3KL8L80CM-MGCT 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Samsung Electronics
K3K8K80BM-JGCT - Samsung LPDDR DRAM Memory IC | Samsung Electronics
K3K8K80BM-JGCT ✓ 활성
사양 비교
| 파라미터 | K3K8K80BM-JGCT | K3KL8L80CM-MGCT |
|---|---|---|
| 브랜드 | Samsung Electronics | Samsung Electronics |
| 카테고리 | Memory ICs | DRAM |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $3.10 | $0.00 |
| Manufacturer | Samsung Electronics | — |
| Product Family | K3K mobile DRAM (LPDDR) component series | — |
| 메모리 유형 | Low Power DRAM (LPDDR) component | LPDDR5X SDRAM |
| Density | [DATA_NEEDED: die density in Gb] | 32 Gbit (4 GB) |
| 메모리 구성 | [DATA_NEEDED: x8/x16 organization] | x32 |
| 인터페이스 | [DATA_NEEDED: LPDDR4X or LPDDR5] | LPDDR5X (JEDEC LPDDR5 extension) |
| Maximum Data Rate | [DATA_NEEDED: Mbps] | — |
| Supply Voltage (VDD) | [DATA_NEEDED: core supply voltage] | — |
| Supply Voltage (VDDQ) | [DATA_NEEDED: I/O supply voltage] | — |
| Package Type | FBGA (Ball Grid Array) | — |
| Ball Count | [DATA_NEEDED: package ball count] | — |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| Speed Grade Suffix | J (per Samsung speed-grade coding) | — |
| Packing Suffix | CT (per Samsung packing-code convention) | — |
| RoHS 상태 | [DATA_NEEDED: RoHS compliance] | Compliant (per JLCPCB listing) |
| MSL 레벨 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL Level] |
| Max Data Rate | — | 7500 Mbps |
| Clock Frequency | — | 3750 MHz |
| Core Supply Voltage (VDD) | — | 1.05 V |
| I/O Supply Voltage (VDDQ) | — | 900 mV (500 mV low-power mode) |
| VDD2 Supply Voltage | — | 1.8 V |
| 패키지 | — | 315-ball FBGA |
| Application Segment | — | Mobile, Automotive, On-device AI, PC |
| Power Efficiency | — | ~20-25% improvement vs LPDDR5 (per Samsung) |