K4S561633FZN75 - 256Mb Mobile SDRAM 4x16Mx16 133MHz FBGA | Samsung
Référence : K4S561633FZN75 ✗ Fin de vie| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $4.2 | $4,20 |
| 10 | $3.78 | $37,80 |
| 100 | $3.36 | $336,00 |
| 500 | $2.94 | $1 470,00 |
| 1 000 | $2.52 | $2 520,00 |
K4S561633FZN75 Présentation
What is Mobile SDRAM? A Mobile SDRAM (Synchronous Dynamic Random-Access Memory) is a low-power variant of standard SDRAM optimized for portable and battery-powered applications. It adds features such as partial-array self-refresh (PASR), temperature-compensated self-refresh (TCSR), and a deep power-down mode that dramatically reduce standby current compared with conventional SDRAM. Within the broader memory taxonomy, Mobile SDRAM sits below LPDDR/DDR but above asynchronous SRAM in performance-per-watt, and is fabricated in the same CMOS process nodes used for commodity DRAM. The 54BOC FBGA package gives a compact 8 mm x 10 mm footprint suitable for handheld product designs.
Key features of the K4S561633FZN75 include a fully synchronous operation referenced to a positive-edge clock, programmable CAS latency of 2 or 3, programmable burst length of 1, 2, 4, 8 or full page, and auto-precharge. The 4-bank architecture enables interleaved operations that hide precharge latency, while the LVCMOS interface simplifies connection to mobile ASICs, baseband processors, and application processors from the 2003-2008 generation. The device supports both Auto-Refresh and Self-Refresh modes and includes a power-down mode for additional energy savings.
The K4S561633FZN75 is implemented using Samsung's high-performance CMOS process and a twin-cell storage architecture, delivering high data rates at moderate power consumption. Synchronous design allows precise cycle control with the system clock and I/O transactions are possible on every clock cycle, which simplifies controller logic compared with asynchronous DRAMs.
Typical applications include mobile phone image buffers, portable media player working memory, PDA / handheld computing buffers, digital camera burst-frame storage, and GPS navigator working memory. The wide operating voltage and low-power modes also make it suitable for industrial handheld terminals and early-generation smart-phone designs.
When designing with this part, ensure that the controller drives CK, CKE, CS, RAS, CAS, WE, BA0/BA1, A0-A12, DQ0-DQ15, DQM, and the ZN75-spec power pins according to the datasheet's AC timing table. Decoupling must use 100 nF plus 10 uF per rail within 5 mm of the BGA balls to maintain signal integrity at 133 MHz.
This page consolidates distributor pricing, JEDEC-standard Mobile SDRAM cross-references, and design notes specific to 54BOC FBGA layouts, offering information not typically compiled on a single manufacturer datasheet page.
Alternatives de remplacement direct pour K4S561633FZN75 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4S561633FZN75 (même facteur de forme et même empreinte) — différant par Burst Length, Memory Type, Organization, Package.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4S561633F-ZL75
✅ Remplacement direct✓ En stock
$2.5 / unité
Voir la fiche technique →K4S561633F-ZF75
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4S561633F-X
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4S561633F-N
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4S561633F-C
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4S561633FZN75 Valeurs maximales et caractéristiques électriques
| Type de mémoire | Mobile SDRAM (Synchronous DRAM) |
| Density | 256 Mbit (268,435,456 bits) |
| Organisation de la mémoire | 4 banks x 4,196,304 words x 16 bits |
| Clock Frequency | 133 MHz |
| Débit de données | PC133 (SDRAM) |
| Supply Voltage (VDD/VDDQ) | 3.0 V (typ); 2.7 V-3.3 V range |
| Interface | LVCMOS |
| Latence CAS | Programmable, 2 or 3 |
| Burst Length | 1, 2, 4, 8, full page (programmable) |
| Boîtier | 54-ball FBGA (54BOC) |
| Température de fonctionnement | Commercial grade (per -ZN75 suffix) |
| Process Technology | Samsung high-performance CMOS |
| Refresh | Auto-Refresh and Self-Refresh |
| Power Modes | Power-Down mode, Partial Array Self-Refresh (PASR) |
| Lead-Free / RoHS | Pb-free (lead-free) - per '-ZN' suffix |
| Bank Architecture | 4 internal banks |
| Row Address | A0-A12 (13-bit) |
| Data Width | x16 (DQ0-DQ15) |
Guide de configuration des broches du K4S561633FZN75 54-ball fbga (54boc)
Configuration des broches du K4S561633FZN75 (boîtier 54-ball fbga (54boc)). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour K4S561633FZN75.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
K4S561633FZN75 convient pour 6 applications: Mobile Phone Image Buffers, Portable Media Player Working Memory, PDA and Handheld Computing Buffers, Digital Camera Burst-Frame Storage, GPS Navigator Working Memory, Industrial Handheld Terminal Working Memory.
Mobile Phone Image Buffers
The K4S561633FZN75's 256 Mbit density and x16 organization make it well-suited as a frame/image buffer for camera-equipped mobile phones of the PC133 era. With 4 banks and programmable burst lengths up to full-page, the device supports efficient interleaved writes from the camera ISP and concurrent reads by the display controller. The 3.0 V LVCMOS interface matches the mobile ASIC power rails common in pre-LPDDR handsets, eliminating level shifters. Designers can rely on PASR and power-down modes to keep standby current under 1 mA when the camera is idle, preserving battery life during stand-by. The 54BOC FBGA's 8x10 mm footprint fits comfortably behind a 2-inch LCD module while the 0.8 mm ball pitch allows 4-layer PCB routing with standard design rules.
Recommandé
Portable Media Player Working Memory
Portable media players (PMP) of the mid-2000s used Mobile SDRAM as the primary working memory for audio/video decoding buffers. The K4S561633FZN75 supplies 4M x 16 words of low-latency storage for MP3, AAC, and MPEG-4 decoder scratch space, and its 133 MHz clock rate keeps up with 30 fps QVGA video decode without frame drops. Partial-array self-refresh lets the PMP enter standby with only 1/16 of the array refreshed, extending battery life between tracks. The 54-ball FBGA reflows cleanly on standard SAC305 lead-free profiles, simplifying RoHS-compliant assembly lines. Designers can pair it with an audio DAC such as the WM8971 over a serial bus while the SDRAM serves as decoder buffer on a parallel interface.
Recommandé
PDA and Handheld Computing Buffers
PDAs and handheld computing terminals require a balance of low standby power and fast application-launch response. The K4S561633FZN75 provides 256 Mbit of x16 working memory that holds the OS image, application pages, and stylus-input queues while consuming under 1 mA in self-refresh thanks to PASR. The 4-bank architecture lets the CPU fetch from one bank while another bank precharges, reducing effective latency for stylus event handling. Operating from a single 3.0 V rail matches the buck regulator output typical in PDA designs, eliminating dual-voltage sequencing. The 54BOC FBGA reflows at standard 245 C peak profiles, and its 0.8 mm pitch allows escape routing on 4-layer PCBs with 0.2 mm trace/space rules.
Recommandé
Digital Camera Burst-Frame Storage
Compact digital cameras use Mobile SDRAM as a burst-frame buffer between the image sensor and the JPEG encoder. The K4S561633FZN75's 133 MHz clock and full-page burst capability absorb a 5 MPixel RAW burst at 2 fps while the encoder compresses the previous frame in parallel. The 4-bank architecture supports simultaneous sensor write and encoder read without contention, eliminating dropped frames at peak burst rates. Its 3.0 V LVCMOS interface aligns with the camera ASIC's I/O supply, and the 54BOC FBGA's compact 8x10 mm footprint fits inside compact camera enclosures. PASR cuts standby current between shots, preserving battery life during long shooting sessions.
Recommandé
GPS Navigator Working Memory
In-vehicle and handheld GPS navigators need fast map-tile access and route-recalculation performance. The K4S561633FZN75 provides 256 Mbit of x16 storage for map data, current-route, and POI (point-of-interest) caches, while its 133 MHz PC133 interface keeps route-recalculation latency under 200 ms. The partial-array self-refresh (PASR) feature lets the navigator keep only the current map region refreshed during standby, drawing under 1 mA from the backup battery. The 54BOC FBGA tolerates automotive temperature transients when paired with commercial-grade parts, and its 3.0 V supply rails integrate cleanly with typical GPS SiRF or MediaTek baseband designs.
Recommandé
Industrial Handheld Terminal Working Memory
Ruggedized industrial handheld terminals (barcode scanners, warehouse inventory pads) need reliable memory that survives temperature swings and mechanical shock. The K4S561633FZN75's 256 Mbit capacity holds inventory databases and scanner logs, while its 3.0 V LVCMOS interface tolerates common 2.7-3.3 V industrial supply rails including holdup capacitor transients. The 54BOC FBGA's solder-joint reliability is well-proven in drop-test conditions, and the SDRAM's synchronous interface simplifies integration with industrial ARM7/ARM9 SoCs. Partial-array self-refresh extends battery life in sleep mode, important for shift-long scan operations in logistics and field-service environments.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4S561633FZN75 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4S561633F-ZL75 | K4S561633F-ZF75 | K4S561633F-X | K4S561633F-N | K4S561633F-C |
|---|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Package | 54-ball FBGA (54BOC) | 54-ball FBGA (54BOC) - same | 54-ball FBGA (54BOC) - same | 54-ball FBGA (54BOC) - same | 54-ball FBGA (54BOC) - same | 54-ball FBGA (54BOC) - same |
| Density | 256 Mbit | 256 Mbit | 256 Mbit | 256 Mbit | 256 Mbit | 256 Mbit |
| Organization | 4 banks x 4M x 16 | 4 banks x 4M x 16 | 4 banks x 4M x 16 | 4 banks x 4M x 16 | 4 banks x 4M x 16 | 4 banks x 4M x 16 |
| Supply Voltage | 3.0 V (2.7-3.3 V) | 3.0 V (2.7-3.3 V) | 3.0 V (2.7-3.3 V) | 3.0 V (2.7-3.3 V) | 3.0 V (2.7-3.3 V) | 3.0 V (2.7-3.3 V) |
| Lead-Free / RoHS | Yes (Pb-free ZN suffix) | Yes (Pb-free ZL suffix) | Yes (Pb-free ZF suffix) | Varies (X suffix denotes commercial/standard balls) | No (N suffix denotes non-Pb-free/leaded) | Varies (C suffix denotes commercial grade) |
| Lifecycle Status | NRND | NRND | NRND | NRND | NRND | NRND |
Principaux différenciateurs
- Pb-free / RoHS-compliant solder balls (vs K4S561633F-N)
- 133 MHz speed grade at CL=3 (PC133 spec) (vs K4S561633F-ZL75)
- Samsung Mobile SDRAM 54BOC standard pinout (vs K4S561633F-C)
Notes de conception
For the K4S561633FZN75 54BOC FBGA package at 0.8 mm ball pitch, use a 4-layer PCB with a continuous ground plane on layer 2 directly under the BGA. Escape routing on the top layer uses 0.15 mm trace/space (6 mil) with microvias to inner layers for the inner-row balls. Place 100 nF + 10 uF decoupling within 5 mm of the VDD/VDDQ balls to maintain signal integrity at 133 MHz. Matched-impedance routing (target 50 ohm single-ended) for DQ, CK, and address lines is essential to avoid setup/hold violations.
The K4S561633FZN75 PC133 SDRAM interface is sensitive to clock-to-DQS skew. Route CK and /CK as a 100-ohm differential pair with length matching to within 1 mm, and place a series 33 ohm damping resistor near the controller's CK driver to suppress ringing. Keep DQ byte lane traces matched within 25 mil of each other to preserve tDS/tDH timing margins at CL=2. Vias on DQ lines should be avoided where possible; when necessary, use ground-return vias adjacent to signal vias to maintain return-path continuity.
Do not leave CKE floating: the K4S561633FZN75 datasheet requires CKE tied to a valid logic level for proper power-down mode operation. Improper CKE handling during initialization can leave the SDRAM in an undefined state and prevent mode register access. Also note that partial-array self-refresh (PASR) must be programmed via the extended mode register before entering self-refresh to achieve sub-mA standby current. Failing to set PASR results in full-array refresh and 10x higher standby current in battery-powered designs.
Informations de conformité
Pb-free / RoHS-compliant per Samsung -ZN suffix option code. Not AEC-Q100 qualified (commercial Mobile SDRAM, not automotive grade). REACH compliance per Samsung semiconductor standard declarations.
