K6T0808C1D-DB70 - 256Kbit (32Kx8) CMOS SRAM 70ns DIP-28 | Samsung
Référence : K6T0808C1D-DB70 ⚠ Dernier achat| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $4.5 | $4,50 |
| 10 | $3.85 | $38,50 |
| 100 | $3.2 | $320,00 |
| 500 | $2.75 | $1 375,00 |
| 1 000 | $2.4 | $2 400,00 |
K6T0808C1D-DB70 Présentation
The K6T0808C1D family consists of asynchronous, byte-wide static RAM cells fabricated on Samsung's advanced CMOS process technology. A static RAM (SRAM) is a type of volatile semiconductor memory that retains data bits as long as power is supplied, without refresh cycles, and uses a bistable latch (cross-coupled inverters) per cell. SRAM occupies the latency tier between faster register files and slower dynamic RAM (DRAM), making it the standard choice for cache memories, look-up tables, FIFOs, and embedded scratch-pad memory in microcontrollers and ASICs. The K6T0808C1D sits within the broader memory taxonomy: SRAM -> volatile memory -> semiconductor memory -> integrated circuit.
Key features of the K6T0808C1D-DB70 include a single 4.5 V to 5.5 V power supply, typical operating current of 60 mA, and a standby current of 15 uA at full data retention. The device offers a TTL-compatible parallel interface with three-state outputs, an active-low chip enable (CE1) and active-high chip enable (CE2) for memory expansion, an active-low output enable (OE) for bus arbitration, and an active-low write enable (WE) for read/write control. The DB package denotes the 600-mil wide DIP-28 form factor with through-hole leads, which simplifies prototype bring-up and is often used as a one-for-one retrofit for legacy 32Kx8 SRAM sockets.
The K6T0808C1D architecture uses a 6-transistor (6T) full CMOS memory cell, which delivers low standby current, fast access, and high noise immunity relative to older NMOS designs. The -DB70 speed code indicates a 70 ns address access time (tAA) and supports 55 ns and 70 ns grades across the family. The 'C' suffix in the family name signifies the commercial 0C to +70C temperature range, while the 'D' indicates DIP packaging.
Typical applications include legacy industrial controller scratch-pad memory, instrument data buffers, programmable logic controller (PLC) bit/byte storage, point-of-sale terminal transaction buffers, telecom line-card buffer memory, and retrofit of older 32Kx8 SRAM sockets in vintage computer or test equipment boards. The DIP-28 package also makes the K6T0808C1D-DB70 popular for educational, hobbyist, and breadboard-based designs.
When designing with this SRAM, observe bus contention rules: never assert WE and OE simultaneously while the output drivers are enabled. Add 0.1 uF decoupling close to each VCC pin and a bulk 10 uF capacitor on the supply rail to suppress switching transients on read/write cycles.
This page synthesizes distributor availability, drop-in pin-compatible alternatives, and practical design considerations that go beyond the manufacturer datasheet.
Alternatives de remplacement direct pour K6T0808C1D-DB70 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K6T0808C1D-DB70 (même facteur de forme et même empreinte) — différant par Access Time (tAA), Density, Memory Type, Mounting Type, Operating Temperature.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K6T0808C1D-DB55
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$3.05 / unité
Voir la fiche technique →K6T0808C1D-DL70
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
AS6C62256-55PCN
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
CY62256N-70PC
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
HM62256AP-70
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K6T0808C1D-DB70 Valeurs maximales et caractéristiques électriques
| Type de mémoire | Volatile SRAM (Static RAM) |
| Memory Organization | 32K x 8 = 256 Kbit |
| Density | 256 Kbit (32,768 bytes) |
| Access Time (tAA) | 70 ns |
| Supply Voltage (VCC) | 4.5 V to 5.5 V |
| Operating Current (ICC) | 60 mA (typical) |
| Standby Current (ISB1) | 15 uA (typical) |
| Température de fonctionnement | 0C to +70C (commercial) |
| Interface | Parallel, asynchronous, TTL-compatible |
| Output Enable (OE) | Yes (active-low) |
| Write Enable (WE) | Yes (active-low) |
| Chip Enable | CE1 (active-low), CE2 (active-high) |
| Largeur du bus de données | 8 bits |
| Boîtier | DIP-28 (600 mil, 'DB' code) |
| Type de montage | Through-Hole |
| Process Technology | CMOS (6T cell) |
Configuration des broches de K6T0808C1D-DB70
| Broche 1 | A14 — Address input 14 (NC for 32Kx8, used on 64Kx8 variants) |
| Broche 2 | A12 — Address input 12 |
| Broche 3 | A7 — Address input 7 |
| Broche 4 | A6 — Address input 6 |
| Broche 5 | A5 — Address input 5 |
| Broche 6 | A4 — Address input 4 |
| Broche 7 | A3 — Address input 3 |
| Broche 8 | A2 — Address input 2 |
| Broche 9 | A1 — Address input 1 |
| Broche 10 | A0 — Address input 0 |
| Broche 11 | I/O0 — Data input/output 0 |
| Broche 12 | I/O1 — Data input/output 1 |
| Broche 13 | A13 — Address input 13 |
| Broche 14 | I/O2 — Data input/output 2 |
| Broche 15 | I/O3 — Data input/output 3 |
| Broche 16 | GND — Ground |
| Broche 17 | I/O4 — Data input/output 4 |
| Broche 18 | I/O5 — Data input/output 5 |
| Broche 19 | I/O6 — Data input/output 6 |
| Broche 20 | I/O7 — Data input/output 7 |
| Broche 21 | CE2 — Chip enable 2 (active-high) |
| Broche 22 | A10 — Address input 10 |
| Broche 23 | OE — Output enable (active-low) |
| Broche 24 | A11 — Address input 11 |
| Broche 25 | A9 — Address input 9 |
| Broche 26 | A8 — Address input 8 |
| Broche 27 | CE1 — Chip enable 1 (active-low) |
| Broche 28 | VCC — Power supply (5 V) |
Applications typiques
K6T0808C1D-DB70 convient pour 6 applications: Industrial PLC Scratch-Pad Memory, Test & Measurement Data Buffer, POS Terminal Transaction Buffer, Retrofit / Legacy 32Kx8 SRAM Socket Replacement, Telecom Line-Card Buffer Memory, Educational / Hobbyist Breadboard Memory.
Industrial PLC Scratch-Pad Memory
The K6T0808C1D-DB70's 32K x 8 organization and 70 ns access time make it well suited to industrial PLC scratch-pad memory, where it stores intermediate calculation results, fault logs, and scan-time working data that must be read and written by the PLC's byte-wide bus in single-cycle times. Its CMOS 60 mA active and 15 uA standby currents are compatible with 24V-to-5V PLC backplanes, and the DIP-28 package simplifies field replacement in legacy rack installations. Compared with newer synchronous SRAMs, the asynchronous parallel interface requires no clock calibration and directly drives 8051, Z80, and 68HC11 industrial controllers common in PLC designs.
Recommandé
Test & Measurement Data Buffer
The K6T0808C1D-DB70 provides a 32K x 8 byte-wide capture buffer for digital storage oscilloscopes, logic analyzers, and bench-top data loggers, where the 70 ns read/write cycle comfortably digitizes signals at sample rates up to ~10 MHz without bus contention. The asynchronous interface is well-matched to legacy A/D converters such as the ADC0804, allowing direct capture of conversion results without DMA. The DIP-28 through-hole package is ideal for hand-soldered prototype fixtures used in calibration labs, and the TTL-compatible I/O simplifies level translation to 74LS logic.
Recommandé
POS Terminal Transaction Buffer
Point-of-sale (POS) terminals and electronic cash registers use the K6T0808C1D-DB70 as a transaction queue buffer that temporarily stores receipts, journal entries, and printer buffers between the main CPU and the receipt printer. The 32K x 8 (256 Kbit) capacity holds roughly 250 lines of 32-character receipt text, while the 70 ns access time keeps pace with thermal printer head shifts up to about 50 mm/s. The CMOS low standby current (15 uA) preserves transaction data during brief power-loss events, and the DIP-28 form factor simplifies service replacements in field-deployed retail terminals.
Recommandé
Retrofit / Legacy 32Kx8 SRAM Socket Replacement
The K6T0808C1D-DB70 is a drop-in functional replacement for legacy 32K x 8 SRAM sockets originally populated by parts such as the HM6116 (2K x 8), HM6264 (8K x 8), or older 62256 series in DIP-28 packages with non-standard or non-JEDEC pinouts. When designing adapter PCBs for retrocomputing hobbyists or vintage industrial machinery, the K6T0808C1D-DB70's CMOS low-power operation reduces thermal stress on legacy supply rails. Its 70 ns access matches Z80, 6502, and 6809 CPU bus timings without wait-state insertion in most configurations.
Recommandé
Telecom Line-Card Buffer Memory
In telecom line cards and PBX systems, the K6T0808C1D-DB70 serves as a per-channel buffer for voice PCM samples, HDLC frames, or DTMF detect results, where its 32K x 8 capacity can hold up to 16 ms of 8 kHz sampled 8-bit linear PCM audio. The 70 ns access enables time-slot switching within standard 125 us PCM frames, and the TTL interface directly connects to legacy framer ICs such as the DS2180 or Am79C30A. The DIP-28 package allows through-hole assembly on telecom backplanes designed for service-friendly replacement.
Recommandé
Educational / Hobbyist Breadboard Memory
The K6T0808C1D-DB70's DIP-28 through-hole package makes it ideal for educational electronics labs, university microcontroller courses, and hobbyist breadboard builds where students can directly wire address, data, and control lines without BGA or fine-pitch QFN soldering challenges. The 5 V supply matches common Arduino and 8051 trainer boards, and the 32K x 8 capacity is large enough to demonstrate memory-mapped I/O, stack operation, and small RTOS implementations. Its well-documented JEDEC-standard pinout and abundant teaching materials online make it a staple part in introductory digital-design curricula.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K6T0808C1D-DB70 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K6T0808C1D-DB55 | AS6C62256-55PCN | CY62256N-70PC | HM62256AP-70 |
|---|---|---|---|---|---|
| Package | DIP-28 (DB, 600 mil) | DIP-28 (DB, 600 mil) - same | DIP-28 (300 mil) - drop-in compatible | DIP-28 (300 mil) - drop-in compatible | DIP-28 (600 mil) - same |
| Brand | Samsung Electronics | Samsung Electronics | Alliance Memory | Infineon (formerly Cypress) | Renesas (formerly Hitachi) |
| Memory Type | Async CMOS SRAM | Async CMOS SRAM | Async CMOS SRAM | Async CMOS SRAM | Async CMOS SRAM |
| Density | 256 Kbit (32K x 8) | 256 Kbit (32K x 8) | 256 Kbit (32K x 8) | 256 Kbit (32K x 8) | 256 Kbit (32K x 8) |
| Access Time | 70 ns | 55 ns (15 ns faster) | 55 ns (15 ns faster) | 70 ns (matches) | 70 ns (matches) |
| Supply Voltage | 4.5 V to 5.5 V | 4.5 V to 5.5 V | 4.5 V to 5.5 V | 4.5 V to 5.5 V | 4.5 V to 5.5 V |
| Operating Temperature | 0C to +70C (commercial) | 0C to +70C (commercial) | 0C to +70C (commercial) | 0C to +70C (commercial) | 0C to +70C (commercial) |
| Lifecycle Status | Last-time-buy (2026) | Last-time-buy (2026) | Active production | Active production | Active production |
Principaux différenciateurs
- Same-family speed upgrade available without pin change (vs K6T0808C1D-DB55)
- Active-production drop-in alternatives available (vs CY62256N-70PC (Infineon/Cypress))
- Modern low-power equivalent for battery-backed designs (vs AS6C62256-55PCN (Alliance Memory))
Notes de conception
Decouple the K6T0808C1D-DB70 with a 0.1 uF ceramic capacitor placed within 5 mm of the VCC pin (pin 28) and a 10 uF bulk capacitor on the supply rail. The asynchronous SRAM draws short current spikes of ~60 mA on read/write cycles, and inadequate decoupling can cause VCC droop that shifts access time and corrupts writes. For battery-backed applications, add a series Schottky diode and 10 uF reservoir to retain data during main-supply collapse.
Never assert WE (active-low) and OE (active-low) simultaneously while CE is active. The K6T0808C1D-DB70's I/O bus is bidirectional, and overlapping enables place the part in a bus-fight condition that can latch up or corrupt memory cells. Standard practice is to gate OE only during read cycles and WE only during write cycles, with a guard time of at least one access cycle between them.
Verify that pin 1 (A14) is tied to GND or left NC for proper 32K x 8 operation. Although the K6T0808C1D-DB70 is a 32K x 8 part, the DIP-28 footprint is shared with 64K x 8 (e.g., 43256) variants where A14 selects the upper half. If the host CPU drives pin 1 high during a write, the upper-half address space may alias. Designers migrating to higher-density SRAMs must update address decoding accordingly.
Informations de conformité
Compliance data not present in the verified web sources for K6T0808C1D-DB70. Samsung Semiconductor typically declares RoHS compliance for post-2005 parts, but this 1997-era family predates formal RoHS documentation. Markers [DATA_NEEDED] applied where data is unavailable.
