MRF8S9170NR3 - 50W 920-960MHz RF Power LDMOS | NXP
Référence : MRF8S9170NR3 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $57.07 | $57,07 |
| 10 | $51.36 | $513,60 |
| 100 | $45.65 | $4 565,00 |
| 250 | $42 | $10 500,00 |
| 500 | $38.5 | $19 250,00 |
MRF8S9170NR3 Présentation
An RF power LDMOS transistor is a type of power MOSFET (metal-oxide-semiconductor field-effect transistor) specifically engineered to deliver high RF output power at high frequencies. LDMOS sits in the broader taxonomy of discrete semiconductors -> MOSFETs -> RF power MOSFETs -> laterally-diffused (LD) MOSFETs. It is the workhorse of cellular base-station power amplifiers because it offers high drain efficiency, excellent thermal stability, and good linearity when used with digital pre-distortion (DPD) systems. Within a base-station radio, the LDMOS final-stage PA converts DC input power into a modulated RF carrier that feeds the antenna, and the linearity of that PA directly determines the achievable data throughput and error-vector magnitude (EVM) of the cellular link.
Key features include a 70 V drain-source voltage rating, integrated ESD protection, an internal matching network for the 920-960 MHz cellular band, and high ruggedness for mismatch tolerance. The OM-780-2 ceramic flange package provides a low thermal-resistance path (typically specified in the manufacturer's datasheet) that can be bolted directly to a heatsink or cold-plate, enabling continuous CW or pulsed W-CDMA operation at the rated 50 W average output power.
Typical applications include cellular base-station final-stage PAs at 920-960 MHz, W-CDMA / LTE macro-cell driver amplifiers, Class AB and Class C amplifier topologies, and Doherty PA configurations where the device's characterized impedance data enables the 90-degree offset-line combiner. The part is also used in repeaters, boosters, and tactical-radio RF power stages operating in the upper-cell band.
When designing with the MRF8S9170NR3, always use the manufacturer's recommended bias sequencing (gate voltage applied before drain voltage, gate discharged before drain is removed) to avoid device damage. Provide adequate heatsinking with a low-thermal-resistance mounting interface, and follow the PCB layout and grounding recommendations in the NXP datasheet reference design to achieve the rated gain and efficiency.
This page synthesizes verified distributor pricing, characterized drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving RF base-station engineers a single source of parametric, supply-chain, and design data.
Alternatives de remplacement direct pour MRF8S9170NR3 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MRF8S9170NR3 (même facteur de forme et même empreinte) — différant par Mounting Type, Manufacturer, Package, Technology, Transistor Type.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRF8S9102NR3
✅ Remplacement direct✓ En stock
$24.1 / unité
Voir la fiche technique →MRF8S9220HSR3
✅ Remplacement direct✓ En stock
$96.8 / unité
Voir la fiche technique →MRFE6S9125NR1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF377
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
BLF888D
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF8S9170NR3 Valeurs maximales et caractéristiques électriques
| Manufacturer | NXP Semiconductors |
| Type de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power LDMOS |
| Frequency Range | 920 MHz to 960 MHz |
| Output Power (Average, W-CDMA) | 50 W |
| Power Gain (Typical) | 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias |
| Drain-Source Voltage Rating (Vdss) | 70 V |
| Operating Drain Voltage (Test Condition) | 28 V |
| Quiescent Bias Current (Idq, Test Condition) | 1 A |
| Boîtier | OM-780-2 (ceramic flange) |
| Type de montage | Surface Mount / Flange Mount (bolt-down thermal pad) |
| Class of Operation | Class AB, Class C (W-CDMA) |
| Lead-Free / RoHS | Lead Free (per digchip listing) |
| Impedance Characterization | Series-equivalent large-signal impedance parameters provided |
| Test Conditions Note | 100% PAR tested for guaranteed output power capability |
Configuration des broches de MRF8S9170NR3
| Broche 1 | RF Input (Gate) — RF signal input; gate bias applied through bias-tee on this port |
| Broche 2 | RF Output (Drain) — RF signal output; drain DC fed through bias-tee on this port |
| Broche Flange | GND / Thermal — RF and DC ground; thermal path to heatsink via bolted flange |
Zone de fonctionnement sûr (DC)
Applications typiques
MRF8S9170NR3 convient pour 6 applications: W-CDMA Base Station Final-Stage Power Amplifier, Macro-Cell LTE / NR Driver Amplifier, Doherty Power Amplifier Architecture, Cellular Repeater / Signal Booster, Class C CW Industrial / Tactical RF Power Stage, Public-Safety Land-Mobile Radio (LMR) Infrastructure.
W-CDMA Base Station Final-Stage Power Amplifier
The MRF8S9170NR3 is engineered for the final-stage RF power amplifier in 920-960 MHz W-CDMA cellular base stations. Its 50 W average output power at 28 V drain bias, combined with 19.3 dB typical gain and 100% PAR-tested linearity, directly supports the W-CDMA peak-to-average ratio envelope while remaining linear enough for digital pre-distortion (DPD) correction. The OM-780-2 ceramic flange package provides the low thermal resistance required to dissipate the ~50 W heat load at continuous 50% drain efficiency. The device's characterized series-equivalent large-signal impedance parameters simplify matching-network synthesis at the design frequency, shortening PA development cycles versus unmodeled discrete RF MOSFETs.
Recommandé
Macro-Cell LTE / NR Driver Amplifier
Beyond W-CDMA, the MRF8S9170NR3 is well-suited as a driver amplifier stage in macro-cell LTE and 5G NR radios operating in the upper 900 MHz cellular band. Its 19.3 dB gain lifts typical -3 dBm small-signal driver levels to the +46 dBm (40 W) range required to feed a final-stage GaN or LDMOS PA at the antenna output. The 70 V drain breakdown rating and the rugged OM-780-2 ceramic flange make it tolerant of load-pull excursions and antenna-mismatch conditions common in field-deployed cellular towers. Engineers typically pair the MRF8S9170NR3 with NXP's AFD27x DPD pre-distortion ICs to achieve the linearity required for 256-QAM LTE and 1024-QAM NR uplink/downlink signals.
Recommandé
Doherty Power Amplifier Architecture
The MRF8S9170NR3's characterized large-signal impedance parameters and Class AB bias profile make it a strong candidate for Doherty PA architectures used in modern high-efficiency cellular transmitters. In a symmetric Doherty configuration, two MRF8S9170NR3 devices (one main, one peaking) can deliver a 50 W average output with peak efficiency pushed above 40% at 6 dB back-off - critical for LTE/NR signals whose high PAR would otherwise force the main PA into a low-efficiency operating region. The OM-780-2 ceramic flange's flange-to-heatsink thermal path keeps the peaking device cool during long high-power bursts, while the shared package across the MRF8S9xxx family lets the same matching and combining networks be reused across product variants.
Recommandé
Cellular Repeater / Signal Booster
In cellular repeaters and bi-directional amplifiers (BDAs) operating in the 920-960 MHz band, the MRF8S9170NR3 provides a robust 50 W final-stage amplification path that tolerates the variable load VSWR presented by donor or server antennas in field installations. Its high gain (19.3 dB) lets a single MRF8S9170NR3 drive a +46 dBm output directly from a small-signal front-end, reducing the repeater's bill-of-materials count and PCB footprint. The OM-780-2 ceramic flange can be bolted to the repeater chassis, which doubles as the thermal mass and heatsink, simplifying mechanical design. Built-in ruggedness and ESD protection further protect the device in the often-harsh electrical environment of tower-top repeaters.
Recommandé
Class C CW Industrial / Tactical RF Power Stage
Outside cellular, the MRF8S9170NR3 can serve as a 50 W CW RF power stage in Class C industrial heating, plasma generation, or tactical-radio applications where its 920-960 MHz fundamental frequency is suitable. In Class C operation with the gate biased below threshold, the device achieves higher drain efficiency than Class AB at the cost of linearity, making it appropriate for constant-envelope FSK or FM modulation schemes used in legacy tactical and SCADA radios. The 70 V drain breakdown margin provides headroom for the high peak currents encountered in Class C, while the OM-780-2 ceramic flange provides the thermal capacity to handle continuous-duty CW operation at the rated power level.
Recommandé
Public-Safety Land-Mobile Radio (LMR) Infrastructure
Public-safety LMR networks in some regions (notably parts of Asia-Pacific) operate in the 920-960 MHz band using P25, TETRA, or DMR modulation. The MRF8S9170NR3's 50 W average power and Class AB linearity make it a direct fit for the final stage of an LMR base-station repeater, where it must cleanly amplify phase-modulated signals with tight adjacent-channel-power-ratio (ACPR) requirements. The 100% PAR-tested output capability and the rugged OM-780-2 ceramic flange shorten qualification cycles for safety-critical public-safety infrastructure. NXP's long-term product longevity program also supports the multi-decade deployment windows typical of public-safety networks.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MRF8S9170NR3 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRF8S9102NR3 | MRF8S9220HSR3 | MRFE6S9125NR1 | MRF377 | BLF888D |
|---|---|---|---|---|---|---|
| Package | OM-780-2 ceramic flange | OM-780-2 ceramic flange | OM-780-2 ceramic flange | OM-780-2 ceramic flange | OM-780-2 ceramic flange | OM-780-2-class ceramic flange |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Ampleon |
| Operating Frequency Range | 920 - 960 MHz | 865 - 895 MHz | 920 - 960 MHz | 880 MHz | 800 - 900 MHz | UHF band |
| Output Power (Average) | 50 W | ~40 W | ~60 W | 125 W peak | ~20 W | 50 W |
| Drain Operating Voltage | 28 V | 28 V | 28 V | 28 V | 28 V | 28 - 32 V |
| Vdss Rating | 70 V | 70 V | 70 V | 70 V | 65 V | 65 V |
| Class of Operation | Class AB / Class C | Class AB / Class C | Class AB / Class C | Class AB / Class C | Class AB | Class AB |
Principaux différenciateurs
- Specifically characterized at 920 MHz for upper-cell-band W-CDMA PAs (vs MRF8S9102NR3)
- 100% PAR-tested for guaranteed W-CDMA output power capability (vs MRF377)
- OM-780-2 ceramic flange package with proven reliability in base-station deployments (vs BLF888D (Ampleon))
Notes de conception
Estimated: At 50 W RF output and ~50% drain efficiency, the MRF8S9170NR3 dissipates approximately 50 W of heat into the OM-780-2 ceramic flange. The flange MUST be bolted to a heatsink or cold-plate with a thermal interface material (TIM) such as a high-conductivity silicone pad or indium foil. Use the datasheet's thermal-resistance figure and tighten flange screws to the manufacturer-specified torque to avoid thermal-interface voids. For CW or high-duty-cycle W-CDMA, target a heatsink thermal resistance below 0.3 C/W to keep Tj within the safe operating envelope.
Follow the NXP reference design PCB layout in the MRF8S9170N.pdf datasheet. The OM-780-2 flange is also the RF and DC ground return, so the PCB footprint MUST provide a continuous ground plane under the flange with multiple via rows stitching the top and bottom ground layers. Drain and gate bias lines must be decoupled with broadband chip capacitors (10 nF, 100 pF) placed within 2 mm of the bias feedthrough, and the input/output microstrip traces must be 50-ohm controlled-impedance with the substrate and dielectric constant specified by NXP.
Always sequence the bias supplies: apply gate voltage (Vgs) BEFORE applying drain voltage (Vdd), and discharge the gate BEFORE removing drain voltage. Reverse sequencing can cause destructive turn-on transients. Do not exceed the 70 V Vdss rating during mismatch-induced drain ringing; add a drain snubber or reduce supply voltage if observed ringing exceeds 50 V peak. Do not operate the device without a heatsink or with insufficient thermal compound - the OM-780-2 ceramic flange will overheat rapidly in CW service.
Keep the input and output matching networks physically separated to prevent feedback oscillation. Use a small gate-series resistor (a few ohms) close to the gate pin to damp low-frequency parametric oscillations common in high-gain LDMOS stages. Provide a small (1-2 pF) gate-drain feedback capacitor to stabilize the stage if needed - the NXP datasheet reference design shows the recommended value.
Informations de conformité
Lead Free status per digchip listing. RoHS, REACH, halogen-free and conflict-mineral compliance not surfaced in verified data - mark as 'unknown' and consult NXP product compliance declarations.
