SPW47N60C3 vs STW45NM60-H Comparaison
Comparaison détaillée côte à côte de SPW47N60C3 par Infineon et STW45NM60-H par STMicroelectronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
STMicroelectronics
STW45NM60-H - 600V 45A MDmesh N-Channel Power MOSFET | STMicroelectronics
STW45NM60-H ✓ ActifComparaison des spécifications
| Paramètre | SPW47N60C3 | STW45NM60-H |
|---|---|---|
| Marque | Infineon | STMicroelectronics |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $6,10 | $3,78 |
| Part Number | SPW47N60C3 | — |
| Manufacturer | Infineon Technologies AG | — |
| Technology | CoolMOS C3 (superjunction) | MDmesh (super-junction) |
| Type de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (V(BR)DSS) | 650 V | — |
| Continuous Drain Current (ID) at Tc | 47 A | — |
| Power Dissipation (PD) at Tc | 415 W | — |
| RDS(on) (typical) | 70 mOhm [DATA_NEEDED: VGS test condition] | — |
| Gate Charge (Qg, typical) | [DATA_NEEDED: nanocoulombs] | — |
| Output Capacitance Eoss @ 400V | Very low (per C3 series datasheet) | — |
| Boîtier | TO-247-3-1 (PG-TO247-3-1) through-hole | TO-247-3 (through-hole) |
| Type de montage | Through Hole | Through Hole |
| Plage de température de fonctionnement | -55C to +150C (junction, typical for CoolMOS C3) | -55 °C to +150 °C (TJ) |
| Configuration | Single N-channel, 3 pins (G, D, S) | — |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Niveau MSL | N/A (through-hole) | — |
| Series | CoolMOS C3 (600V generation) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 600 V (650 V at TJMAX) |
| Continuous Drain Current (ID) | — | 45 A at Tc = 25 °C |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) | — | 417 W at Tc = 25 °C |
| On-Resistance (RDS(on)) | — | 0.09 Ω typical at VGS = 10 V |
| Gate-Source Threshold Voltage (VGS(th)) | — | 4 V typical |
| Gate Charge (Qg) | — | [DATA_NEEDED: typical total gate charge] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: input capacitance] |
| Avalanche Rating | — | 100% avalanche tested |
| dv/dt Capability | — | High |