SPW47N60C3 vs STW45NM60-H 비교

다음의 상세 나란히 비교: SPW47N60C3 제조: Infineon 및 STW45NM60-H 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 SPW47N60C3 STW45NM60-H
브랜드 Infineon STMicroelectronics
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $6.10 $3.78
Part Number SPW47N60C3 —
Manufacturer Infineon Technologies AG —
Technology CoolMOS C3 (superjunction) MDmesh (super-junction)
트랜지스터 유형 N-Channel MOSFET —
Drain-Source Voltage (V(BR)DSS) 650 V —
Continuous Drain Current (ID) at Tc 47 A —
Power Dissipation (PD) at Tc 415 W —
RDS(on) (typical) 70 mOhm [DATA_NEEDED: VGS test condition] —
Gate Charge (Qg, typical) [DATA_NEEDED: nanocoulombs] —
Output Capacitance Eoss @ 400V Very low (per C3 series datasheet) —
패키지 TO-247-3-1 (PG-TO247-3-1) through-hole TO-247-3 (through-hole)
실장 유형 Through Hole Through Hole
동작 온도 범위 -55C to +150C (junction, typical for CoolMOS C3) -55 °C to +150 °C (TJ)
Configuration Single N-channel, 3 pins (G, D, S) —
RoHS 상태 Compliant Compliant
Lead-Free Yes —
MSL 레벨 N/A (through-hole) —
Series CoolMOS C3 (600V generation) —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 600 V (650 V at TJMAX)
Continuous Drain Current (ID) — 45 A at Tc = 25 °C
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) — 417 W at Tc = 25 °C
On-Resistance (RDS(on)) — 0.09 Ω typical at VGS = 10 V
Gate-Source Threshold Voltage (VGS(th)) — 4 V typical
Gate Charge (Qg) — [DATA_NEEDED: typical total gate charge]
Input Capacitance (Ciss) — [DATA_NEEDED: input capacitance]
Avalanche Rating — 100% avalanche tested
dv/dt Capability — High

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