SPW47N60C3 vs STW45NM60-H 比較

詳細な並列比較: SPW47N60C3 メーカー: Infineon および STW45NM60-H メーカー: STMicroelectronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

仕様比較

パラメータ SPW47N60C3 STW45NM60-H
ブランド Infineon STMicroelectronics
カテゴリ MOSFETs MOSFETs
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $6.10 $3.78
Part Number SPW47N60C3 —
Manufacturer Infineon Technologies AG —
Technology CoolMOS C3 (superjunction) MDmesh (super-junction)
トランジスタタイプ N-Channel MOSFET —
Drain-Source Voltage (V(BR)DSS) 650 V —
Continuous Drain Current (ID) at Tc 47 A —
Power Dissipation (PD) at Tc 415 W —
RDS(on) (typical) 70 mOhm [DATA_NEEDED: VGS test condition] —
Gate Charge (Qg, typical) [DATA_NEEDED: nanocoulombs] —
Output Capacitance Eoss @ 400V Very low (per C3 series datasheet) —
パッケージ TO-247-3-1 (PG-TO247-3-1) through-hole TO-247-3 (through-hole)
実装タイプ Through Hole Through Hole
動作温度範囲 -55C to +150C (junction, typical for CoolMOS C3) -55 °C to +150 °C (TJ)
Configuration Single N-channel, 3 pins (G, D, S) —
RoHS ステータス Compliant Compliant
Lead-Free Yes —
MSLレベル N/A (through-hole) —
Series CoolMOS C3 (600V generation) —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 600 V (650 V at TJMAX)
Continuous Drain Current (ID) — 45 A at Tc = 25 °C
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) — 417 W at Tc = 25 °C
On-Resistance (RDS(on)) — 0.09 Ω typical at VGS = 10 V
Gate-Source Threshold Voltage (VGS(th)) — 4 V typical
Gate Charge (Qg) — [DATA_NEEDED: typical total gate charge]
Input Capacitance (Ciss) — [DATA_NEEDED: input capacitance]
Avalanche Rating — 100% avalanche tested
dv/dt Capability — High

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