SPW47N60C3 vs STW45NM60-H Vergleich
Detaillierter Direktvergleich von SPW47N60C3 von Infineon und STW45NM60-H von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
STMicroelectronics
STW45NM60-H - 600V 45A MDmesh N-Channel Power MOSFET | STMicroelectronics
STW45NM60-H ✓ AktivSpezifikationsvergleich
| Parameter | SPW47N60C3 | STW45NM60-H |
|---|---|---|
| Marke | Infineon | STMicroelectronics |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $6,10 | $3,78 |
| Part Number | SPW47N60C3 | — |
| Manufacturer | Infineon Technologies AG | — |
| Technology | CoolMOS C3 (superjunction) | MDmesh (super-junction) |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (V(BR)DSS) | 650 V | — |
| Continuous Drain Current (ID) at Tc | 47 A | — |
| Power Dissipation (PD) at Tc | 415 W | — |
| RDS(on) (typical) | 70 mOhm [DATA_NEEDED: VGS test condition] | — |
| Gate Charge (Qg, typical) | [DATA_NEEDED: nanocoulombs] | — |
| Output Capacitance Eoss @ 400V | Very low (per C3 series datasheet) | — |
| Gehäuse | TO-247-3-1 (PG-TO247-3-1) through-hole | TO-247-3 (through-hole) |
| Montageart | Through Hole | Through Hole |
| Betriebstemperaturbereich | -55C to +150C (junction, typical for CoolMOS C3) | -55 °C to +150 °C (TJ) |
| Configuration | Single N-channel, 3 pins (G, D, S) | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL-Level | N/A (through-hole) | — |
| Series | CoolMOS C3 (600V generation) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 600 V (650 V at TJMAX) |
| Continuous Drain Current (ID) | — | 45 A at Tc = 25 °C |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) | — | 417 W at Tc = 25 °C |
| On-Resistance (RDS(on)) | — | 0.09 Ω typical at VGS = 10 V |
| Gate-Source Threshold Voltage (VGS(th)) | — | 4 V typical |
| Gate Charge (Qg) | — | [DATA_NEEDED: typical total gate charge] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: input capacitance] |
| Avalanche Rating | — | 100% avalanche tested |
| dv/dt Capability | — | High |