SPW47N60C3 vs STW45NM60-H 对比

详细并排对比 SPW47N60C3 出自 Infineon 和 STW45NM60-H 出自 STMicroelectronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 SPW47N60C3 STW45NM60-H
品牌 Infineon STMicroelectronics
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $6.10 $3.78
Part Number SPW47N60C3 —
Manufacturer Infineon Technologies AG —
Technology CoolMOS C3 (superjunction) MDmesh (super-junction)
晶体管类型 N-Channel MOSFET —
Drain-Source Voltage (V(BR)DSS) 650 V —
Continuous Drain Current (ID) at Tc 47 A —
Power Dissipation (PD) at Tc 415 W —
RDS(on) (typical) 70 mOhm [DATA_NEEDED: VGS test condition] —
Gate Charge (Qg, typical) [DATA_NEEDED: nanocoulombs] —
Output Capacitance Eoss @ 400V Very low (per C3 series datasheet) —
封装 TO-247-3-1 (PG-TO247-3-1) through-hole TO-247-3 (through-hole)
安装类型 Through Hole Through Hole
工作温度范围 -55C to +150C (junction, typical for CoolMOS C3) -55 °C to +150 °C (TJ)
Configuration Single N-channel, 3 pins (G, D, S) —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
MSL 等级 N/A (through-hole) —
Series CoolMOS C3 (600V generation) —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 600 V (650 V at TJMAX)
Continuous Drain Current (ID) — 45 A at Tc = 25 °C
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) — 417 W at Tc = 25 °C
On-Resistance (RDS(on)) — 0.09 Ω typical at VGS = 10 V
Gate-Source Threshold Voltage (VGS(th)) — 4 V typical
Gate Charge (Qg) — [DATA_NEEDED: typical total gate charge]
Input Capacitance (Ciss) — [DATA_NEEDED: input capacitance]
Avalanche Rating — 100% avalanche tested
dv/dt Capability — High

数据手册与资源

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