BSC360N15NS3GATMA1 - 150V 36mOhm N-Channel OptiMOS MOSFET | Infineon
Référence : BSC360N15NS3GATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.95 | $1,95 |
| 10 | $1.72 | $17,20 |
| 100 | $1.42 | $142,00 |
| 500 | $1.18 | $590,00 |
| 1 000 | $0.99 | $990,00 |
| 3 000 | $0.82 | $2 460,00 |
BSC360N15NS3GATMA1 Présentation
An N-channel power MOSFET is a voltage-controlled three-terminal transistor in which a positive gate-to-source voltage creates an inversion-layer conduction channel between drain and source, allowing electrons to flow. Power MOSFETs sit within the broader hierarchy of discrete semiconductors: transistor -> MOSFET -> N-channel power MOSFET -> OptiMOS family. OptiMOS 3 is Infineon's third-generation high-performance trench MOSFET process platform, optimized for low conduction and switching losses simultaneously.
Key features include a 150 V drain-source breakdown voltage, ultra-low 36 mOhm maximum on-resistance at VGS = 10 V, 33 A continuous drain current at Tc, and a low gate charge for fast switching transitions. The SuperSO8 package exposes the drain pad through the bottom thermal pad, minimizing package resistance and maximizing heat transfer to the PCB copper. Avalanche-rated and 100 percent Rg-tested, the device is qualified for industrial and telecom power-conversion environments.
The OptiMOS 3 process technology uses a charge-balanced super-junction trench architecture, producing a smaller die for a given RDS(on) than planar predecessors. The lower gate charge Qg and reduced Qgd translate directly into reduced switching losses at high frequency, enabling smaller magnetics and output capacitors in LLC, full-bridge, and synchronous buck topologies at the 150 V node.
Typical applications include 48 V telecom bus converters, synchronous rectification in isolated DC-DC stages, solar micro-inverters, motor drive half-bridges, and hot-swap controllers in server backplanes. The SuperSO8 footprint also suits point-of-load converters from intermediate 24 V or 36 V distributed bus rails.
When designing with this device, ensure the gate driver delivers at least 10 V VGS for full enhancement; below 6 V the device enters the Miller plateau and RDS(on) rises sharply. Always stay within the SOA curve for pulsed loads and provide sufficient gate-source pull-down to prevent inadvertent turn-on from dv/dt coupling.
This page consolidates distributor pricing, drop-in alternatives in the same SuperSO8 footprint, and practical PCB-layout notes beyond what the bare manufacturer datasheet provides.
Alternatives de remplacement direct pour BSC360N15NS3GATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec BSC360N15NS3GATMA1 (même facteur de forme et même empreinte) — différant par Technology, Package, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
BSC520N15NS3G
✅ Remplacement direct✓ En stock
$0.62 / unité
Voir la fiche technique →BSC440N15NS3G
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
BSC097N06NSATMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$0.38 / unité
Voir la fiche technique →BSC265N10LSFGATMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$0.72 / unité
Voir la fiche technique →BSC0993NDATMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$1.32 / unité
Voir la fiche technique →BSC0911NDATMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$0.46 / unité
Voir la fiche technique →SiR872ADP-T1-GE3
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
BSC360N15NS3GATMA1 Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Part Number | BSC360N15NS3GATMA1 |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at Tc | 33 A |
| On-Resistance RDS(on) max at VGS=10V | 36 mOhm |
| Power Dissipation (PD) at Tc | 74 W |
| Gate Threshold Voltage (VGS th) typ | 3.0 V |
| Boîtier | PG-TDSON-8-1 (SuperSO8, 5x6 mm) |
| Type de montage | Surface Mount |
| Plage de température de fonctionnement | -55°C to +150°C (junction) |
| Avalanche Energy Rated | Yes |
| Statut RoHS | Compliant |
| Lead-Free | Yes |
| Niveau MSL | 1 |
Configuration des broches de BSC360N15NS3GATMA1
| Broche 1 | S — Source |
| Broche 2 | S — Source |
| Broche 3 | S — Source |
| Broche 4 | G — Gate |
| Broche 5 | S — Source |
| Broche 6 | S — Source |
| Broche 7 | S — Source |
| Broche 8 | S — Source |
| Broche PAD | D — Drain (exposed thermal pad, bottom) |
Zone de fonctionnement sûr (BSC360N15NS3G)
Applications typiques
BSC360N15NS3GATMA1 convient pour 6 applications: 48V Telecom Bus Converter, Synchronous Rectification in Isolated DC-DC, Solar Micro-Inverter Power Stage, Motor Drive Half-Bridge, Hot-Swap and ORing Controller, Automotive 48V Mild-Hybrid Bus Converter.
48V Telecom Bus Converter
The BSC360N15NS3GATMA1's 150 V VDS rating and 36 mOhm RDS(on) suit primary-side switching in isolated 48 V telecom bus converters, where rectified input voltages reach 75 V and PFC stages push the rail up to 400 V. Synchronous rectification on the secondary side benefits from the device's low gate charge and fast switching transitions, enabling LLC and active-clamp topologies at 200-500 kHz. The SuperSO8 footprint simplifies thermal layout, with a single exposed drain pad sinking heat into 1-2 square inches of inner-layer copper.
Recommandé
Synchronous Rectification in Isolated DC-DC
In isolated DC-DC stages using push-pull, half-bridge, or full-bridge topologies, the BSC360N15NS3GATMA1 functions as the synchronous rectifier MOSFET on the secondary side, replacing lossy Schottky diodes. With 36 mOhm RDS(on), conduction loss at 20 A is 14.4 W versus 25-30 W for a typical Schottky, a 40-50% efficiency improvement. The OptiMOS 3 process minimizes body-diode reverse recovery, reducing dead-time losses and EMI spikes across the isolation barrier.
Recommandé
Solar Micro-Inverter Power Stage
Micro-inverters and string inverters with 100-150 V DC bus rails use the BSC360N15NS3GATMA1 in H-bridge and totem-pole stages, switching at 50-100 kHz to drive toroidal or EI transformers. The 33 A continuous drain current supports single-module micro-inverter outputs up to 1.5 kW per phase, while the 150 V rating absorbs transient ringing from transformer leakage inductance. Infineon's OptiMOS 3 reliability data and 100% Rg testing support the long-life requirement of solar installations.
Recommandé
Motor Drive Half-Bridge
The BSC360N15NS3GATMA1 is well-matched to 100-150 V brushed and stepper motor half-bridge drives, where the 33 A continuous rating and 36 mOhm RDS(on) minimize heat generation in PWM switching at 20-50 kHz. The low gate charge reduces driver losses, enabling compact gate-drive designs around IRS2302 or IRS2114 half-bridge drivers. The SuperSO8 footprint allows high-density PCB layouts for multi-axis CNC and robotics motion controllers.
Recommandé
Hot-Swap and ORing Controller
Hot-swap controllers and ORing circuits in 48 V server backplanes benefit from the BSC360N15NS3GATMA1's 36 mOhm RDS(on) and 150 V avalanche rating. The device handles inrush currents during board insertion while the controller's soft-start regulates the gate ramp. Its low conduction loss reduces the steady-state heat dissipation in always-on ORing applications, where two supplies share a load.
Recommandé
Automotive 48V Mild-Hybrid Bus Converter
Mild-hybrid automotive 48 V bus converters use the BSC360N15NS3GATMA1 as the primary switching element in bidirectional DC-DC stages between 12 V and 48 V rails. The 150 V VDS handles 48 V bus transients up to 70 V during load-dump events, and the SuperSO8 package supports AEC-Q101-like manufacturing flow though this specific part is not AEC-qualified. Designers should select the automotive-grade variant for production deployments requiring full Q101 compliance.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour BSC360N15NS3GATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | BSC520N15NS3G | BSC440N15NS3G | SiR872ADP-T1-GE3 |
|---|---|---|---|---|
| Package | PG-TDSON-8-1 (SuperSO8, 5x6 mm) | PG-TDSON-8-1 (SuperSO8) - same | PG-TDSON-8-1 (SuperSO8) - same | PowerPAK SO-8 (5x6 mm) - same footprint |
| Brand | Infineon | Infineon | Infineon | Vishay Intertechnology |
| Drain-Source Voltage (VDS) | 150 V | 150 V | 150 V | 150 V |
| Continuous Drain Current (ID at Tc) | 33 A | 30 A | 32 A | 32 A |
| On-Resistance RDS(on) max at 10V | 36 mOhm | 52 mOhm (+44%) | 44 mOhm (+22%) | 35-40 mOhm (similar) |
| Power Dissipation (Tc) | 74 W | 62 W | 68 W | 78 W |
| Technology | OptiMOS 3 trench | OptiMOS 3 trench | OptiMOS 3 trench | Vishay TrenchFET |
| Unit Price (qty 1000, as of 2026-09-14) | USD 0.99 | USD 0.78 (lower cost) | USD 0.88 (mid cost) | USD 1.10 (cross-brand) |
Principaux différenciateurs
- Lowest RDS(on) in Infineon's 150 V SuperSO8 OptiMOS 3 family (vs BSC520N15NS3G)
- OptiMOS 3 process gives best-in-class figure of merit (vs SiR872ADP-T1-GE3)
- Pin-compatible with industry-standard SO-8 5x6 footprint (vs DPAK/TO-252 alternatives)
Notes de conception
Estimated: at ID = 20 A continuous and RDS(on) = 40 mOhm (hot), conduction loss is 16 W. With SuperSO8 mounted on 1 square inch of 2 oz copper top-layer plus 9-via array to bottom layer, expected theta_JA is approximately 45-50 C/W, giving a junction rise of 720-800 C above ambient. A 25°C ambient yields Tj near 100°C, well inside the 150°C limit. For sustained > 20 A loads, add a top-side heatsink or expand copper to 2 square inches to halve theta_JA.
The exposed bottom pad is the drain and primary thermal path. Use a continuous copper pour under the device spanning at least 1 square inch, with a 5x6 thermal via array (0.3 mm drill, 1.0 mm pitch) connecting top, inner, and bottom layers. Solder paste stencil aperture should be 1:1 with the pad to ensure proper void-free solder joint, which directly impacts both thermal resistance and electrical connection to drain.
Place the gate driver within 10 mm of the gate pin to minimize gate-loop inductance. Use a 10 ohm gate resistor with a small ferrite bead to dampen parasitic ringing; the BSC360N15NS3GATMA1's low Qg keeps switching losses acceptable. Keep the source return path direct to the driver ground Kelvin pin to avoid source-inductance-induced turn-on glitches. A 100 kohm gate-source pull-down resistor prevents inadvertent turn-on during power-up.
Do not exceed 150 V VDS even for transient spikes: ringing from transformer leakage inductance can easily double the nominal bus voltage. Add an RC snubber (10-22 ohm + 1-2 nF) across the drain-source to absorb leakage energy. Confirm VGS stays below the +/- 20 V absolute maximum rating, especially during avalanche events where the gate can couple from drain via Cgd. Below 6 V VGS the device operates in the Miller plateau and RDS(on) rises sharply, so drive the gate with at least 10 V for full enhancement.
Informations de conformité
RoHS compliant per Infineon product page. Not AEC-Q100 qualified in this specific part number - automotive variants carry -Q1 or automotive-grade suffixes. Lead-free reflow-compatible per JEDEC J-STD-020.
