BUK9M85-60E - 60V 85mΩ N-Ch Logic Level MOSFET LFPAK33 | Nexperia
Référence : BUK9M85-60E ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0.62 | $0,62 |
| 10 | $0.55 | $5,50 |
| 100 | $0.41 | $41,00 |
| 500 | $0.33 | $165,00 |
| 1 000 | $0.27 | $270,00 |
| 3 000 | $0.22 | $660,00 |
BUK9M85-60E Présentation
A logic-level MOSFET is a power MOSFET whose gate-threshold voltage and full-on gate-drive voltage are designed to be compatible directly with low-voltage logic outputs (3.3 V or 5 V microcontrollers, GPIO pins, gate-driver ICs) without requiring a charge pump or bootstrap. Within the power-semiconductor taxonomy, the BUK9M85-60E sits in the N-channel enhancement-mode MOSFET family, which is itself a subclass of power MOSFETs and ultimately a member of the broader discrete-semiconductor hierarchy. Nexperia's LFPAK33 (Power33) family represents the company's high-density, thermally-efficient surface-mount answer to the older DPAK footprint, delivering much lower thermal resistance in a similarly compact board area.
Key features include 85 mΩ maximum R_DS(on) at V_GS = 10 V, 60 V V_DSS rating for 12 V and 24 V automotive bus systems, logic-level V_GS(th) for direct MCU drive, an integrated source-connected Schottky-like body diode, and a Kelvin-source LFPAK33 lead frame that reduces gate-loop inductance. These specifications deliver very low conduction loss at moderate currents while keeping switching transients under control.
The device architecture pairs a trench gate with a Nexperia-designed source-connected clip and exposed-drain LFPAK33 pad, producing both low R_DS(on) and excellent thermal performance - approximately 4 °C/W junction-to-case. The 4-pin LFPAK33 footprint also provides a true Kelvin source connection at pin 4, decoupling the gate-drive return path from the high-current source path and significantly reducing gate-bounce and ringing.
Typical applications include automotive 12 V and 24 V load switching (e.g., LED drivers, solenoid control, motor drivers), power-OR-ing and reverse-polarity protection, DC-DC converter low-side switches, hot-swap circuits, and general-purpose logic-controlled switching in industrial and consumer systems. The AEC-Q101 qualification makes it especially suited to under-hood and body-electronics modules where reliability is critical.
When designing with this part, ensure that V_GS drive rises fully above the logic-level threshold (~2.1 V) and that the LFPAK33 thermal pad receives a sufficiently large copper pour on the PCB - particularly important at continuous currents approaching 10 A, where conduction losses dominate. The LFPAK33 footprint is also mechanically robust against vibration, an advantage in automotive environments.
Alternatives de remplacement direct pour BUK9M85-60E — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
BUK9M85-60EX
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
BUK7M67-60EX
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IPD800N06NGBTMA1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
BUK9M85-60E Valeurs maximales et caractéristiques électriques
| Manufacturer | Nexperia |
| Part Number | BUK9M85-60E |
| Type de transistor | N-Channel MOSFET |
| Technology | TrenchMOS |
| Drain-Source Voltage (V_DSS) | 60 V |
| On-Resistance (R_DS(on)) max | 85 mΩ at V_GS = 10 V |
| Continuous Drain Current (I_D) | 12.8 A at T_C |
| Power Dissipation (P_D) | 31 W at T_C |
| Gate Threshold Voltage (V_GS(th)) | Logic level (approx. 1.7 V typical, 2.1 V max) |
| Operating Mode | Enhancement Mode |
| Configuration | Single with built-in diode |
| Boîtier | LFPAK33 (Power33), surface mount |
| Type de montage | Surface Mount |
| Plage de température de fonctionnement | -55 °C to +175 °C (junction) |
| Automotive Qualification | AEC-Q101 qualified |
| JESD-30 Code | R-PSSO-G4 |
| Reference Standard | AEC-Q101; IEC-60134 |
| Statut RoHS | Compliant |
Configuration des broches de BUK9M85-60E
| Broche 1 | Gate (G) — Logic-level gate drive input |
| Broche 2 | Source (S) — Source connection (high-current) |
| Broche 3 | Source (S) — Source connection (high-current) |
| Broche 4 | Kelvin Source — Kelvin-source connection (gate-return path) |
| Broche TAB | Drain (TAB) — Drain - exposed thermal pad on bottom of package |
Zone de fonctionnement sûr (SOA) - BUK9M85-60E
Applications typiques
BUK9M85-60E convient pour 6 applications: Automotive 12 V Load Switching, Automotive 24 V Truck / Bus Systems, DC-DC Converter Low-Side Switch, Reverse-Polarity Protection / Power OR-ing, Hot-Swap / In-Rush Current Limiter, Industrial Logic-Controlled Switching.
Automotive 12 V Load Switching
The BUK9M85-60E is purpose-built for 12 V automotive load-switching applications such as body-electronics modules, lighting drivers, and accessory controls. Its 60 V V_DSS rating comfortably covers 12 V bus transients including load-dump pulses specified by ISO 7637-2, while the 85 mΩ R_DS(on) at V_GS=10 V keeps conduction loss within budget at typical solenoid or lamp currents up to 10 A. Logic-level V_GS(th) means a 3.3 V or 5 V microcontroller GPIO can drive the gate directly without a charge pump or external gate-driver IC, reducing BOM cost. The AEC-Q101 qualification supports deployment in under-hood and cabin modules where reliability is mandatory.
Recommandé
Automotive 24 V Truck / Bus Systems
The BUK9M85-60E supports 24 V commercial-vehicle electrical systems such as trucks and buses, where the nominal bus sits at 28 V and transient spikes can approach 40 V. With a 60 V V_DSS rating and 85 mΩ R_DS(on), the part delivers the headroom required for ISO 7637-2 24 V load-dump pulses while still maintaining low conduction loss. The 12.8 A continuous current rating allows direct switching of small DC motors, relay coils, and LED bar segments without paralleling devices. Nexperia's TrenchMOS technology combined with the LFPAK33 Kelvin-source footprint minimises switching losses, important in PWM dimming or motor-speed-control topologies running at 1-20 kHz.
Recommandé
DC-DC Converter Low-Side Switch
The BUK9M85-60E functions as the low-side synchronous-rectifier or main switch in non-isolated buck converters and buck-boost regulators up to about 30 V input. With 85 mΩ R_DS(on) and logic-level gate drive, the part pairs well with low-voltage PWM controllers and gate-driver ICs in 12 V-input telecom, industrial, and consumer designs. At 12 V to 5 V/3.3 V conversion, peak inductor currents around 8-10 A are well within the 12.8 A continuous rating. The exposed LFPAK33 thermal pad keeps junction temperature rise modest at full load, particularly when the PCB copper-pour area follows Nexperia's LFPAK33 thermal-reference layout.
Recommandé
Reverse-Polarity Protection / Power OR-ing
The BUK9M85-60E serves as an ideal reverse-polarity-protection or power-OR-ing element between a 12 V/24 V source and downstream electronics. With body diode forward drop eliminated when the channel is on, conduction loss at 10 A is roughly P = I² × R = 10² × 0.085 = 8.5 W, manageable with proper LFPAK33 PCB copper. Logic-level gate drive means a simple microcontroller or comparator can hold the gate on for normal operation and pull it low during a fault, blocking the body diode reverse current. The 60 V V_DSS rating also handles transients on the supply rail.
Recommandé
Hot-Swap / In-Rush Current Limiter
In 12 V/24 V hot-swap and electronic-circuit-breaker designs, the BUK9M85-60E acts as the inrush-limiting series pass element, gradually turned on by a controlled gate ramp. The 85 mΩ R_DS(on) keeps steady-state dissipation low while the 60 V V_DSS rating absorbs the initial overshoot when downstream bulk capacitors charge. Logic-level V_GS(th) allows direct control from a hot-swap controller IC. The AEC-Q101 qualification supports deployment in rugged industrial and automotive environments where hot-plug events are routine.
Recommandé
Industrial Logic-Controlled Switching
The BUK9M85-60E suits general-purpose industrial logic-controlled switching: relay replacement, solenoid drivers, LED matrix row/column drivers, and small DC-motor control up to 12.8 A. With V_GS(th) compatible with 3.3 V CMOS logic, designers can drive the gate directly from PLC outputs, microcontroller GPIO, or logic buffers without an external gate-driver stage. The LFPAK33 footprint saves board space versus DPAK and provides superior thermal performance for panel-mount and DIN-rail applications where heat dissipation is constrained. The combination of AEC-Q101 and IEC-60134 qualifications broadens deployment into industrial-grade enclosures.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour BUK9M85-60E — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | BUK9M85-60EX | BUK7M67-60EX | IPD800N06NGBTMA1 |
|---|---|---|---|---|
| Package | LFPAK33 | LFPAK33 - same | LFPAK33 - same | LFPAK33 - same |
| Brand | Nexperia | Nexperia | Nexperia | Infineon |
| Drain-Source Voltage (V_DSS) | 60 V | 60 V | 60 V | 60 V |
| R_DS(on) max at V_GS=10V | 85 mΩ | 85 mΩ | 67 mΩ | 80 mΩ |
| Gate Threshold (V_GS(th)) | Logic level (~1.7 V typ) | Logic level | Logic level | Logic level |
| Technology | TrenchMOS | TrenchMOS | TrenchMOS | OptiMOS-T2 |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Principaux différenciateurs
- AEC-Q101 qualified for automotive applications (vs BUK9M85-60EX)
- Lower on-resistance at the same logic-level V_GS (vs BUK7M67-60EX)
- True Kelvin-source connection for clean gate drive (vs IPD800N06NGBTMA1)
Notes de conception
At continuous 12.8 A drain current and V_DS = 24 V, conduction loss P = I² × R_DS(on) = 12.8² × 0.085 ≈ 13.9 W. The LFPAK33 package achieves roughly 4 °C/W junction-to-case on Nexperia's reference PCB; with 25 cm² of 2 oz copper on the drain pad the junction-to-ambient thermal resistance drops to around 50 °C/W. Estimated: at 25 °C ambient this keeps junction rise to about 70 °C, comfortably within the 175 °C rating - but a heatsink or expanded copper pour is required if the application runs continuously at >10 A.
Use the standard Nexperia LFPAK33 PCB footprint with the drain pad soldered directly to a large copper pour on the top layer, plus an array of thermal vias to the inner/ bottom copper planes. The Kelvin-source pin 4 must be connected to the gate-driver ground return separately from the high-current source pins 2-3 to avoid gate-bounce; a small gate-source resistor (10-100 kΩ) is recommended to prevent unwanted turn-on during fast V_DS transients.
Do not assume the body diode is robust for switching-converter reverse-recovery duty - it is a standard MOSFET body diode intended for commutation only. If used as a synchronous rectifier in a buck converter above ~100 kHz, prefer a part with a Schottky or optimised co-pack. Also, ensure V_GS never exceeds ±20 V absolute maximum even during ESD events; place a 10 kΩ gate-source resistor and TVS protection near the gate pin in harsh automotive environments.
Informations de conformité
AEC-Q101 qualified (automotive discrete semiconductor standard, equivalent in spirit to AEC-Q100). Reference standard: IEC-60134. RoHS compliant per Nexperia product page.
