BUK9M85-60E - 60V 85mΩ N-Ch Logic Level MOSFET LFPAK33 | Nexperia
Teilenummer: BUK9M85-60E ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.62 | $0,62 |
| 10 | $0.55 | $5,50 |
| 100 | $0.41 | $41,00 |
| 500 | $0.33 | $165,00 |
| 1.000 | $0.27 | $270,00 |
| 3.000 | $0.22 | $660,00 |
BUK9M85-60E Übersicht
A logic-level MOSFET is a power MOSFET whose gate-threshold voltage and full-on gate-drive voltage are designed to be compatible directly with low-voltage logic outputs (3.3 V or 5 V microcontrollers, GPIO pins, gate-driver ICs) without requiring a charge pump or bootstrap. Within the power-semiconductor taxonomy, the BUK9M85-60E sits in the N-channel enhancement-mode MOSFET family, which is itself a subclass of power MOSFETs and ultimately a member of the broader discrete-semiconductor hierarchy. Nexperia's LFPAK33 (Power33) family represents the company's high-density, thermally-efficient surface-mount answer to the older DPAK footprint, delivering much lower thermal resistance in a similarly compact board area.
Key features include 85 mΩ maximum R_DS(on) at V_GS = 10 V, 60 V V_DSS rating for 12 V and 24 V automotive bus systems, logic-level V_GS(th) for direct MCU drive, an integrated source-connected Schottky-like body diode, and a Kelvin-source LFPAK33 lead frame that reduces gate-loop inductance. These specifications deliver very low conduction loss at moderate currents while keeping switching transients under control.
The device architecture pairs a trench gate with a Nexperia-designed source-connected clip and exposed-drain LFPAK33 pad, producing both low R_DS(on) and excellent thermal performance - approximately 4 °C/W junction-to-case. The 4-pin LFPAK33 footprint also provides a true Kelvin source connection at pin 4, decoupling the gate-drive return path from the high-current source path and significantly reducing gate-bounce and ringing.
Typical applications include automotive 12 V and 24 V load switching (e.g., LED drivers, solenoid control, motor drivers), power-OR-ing and reverse-polarity protection, DC-DC converter low-side switches, hot-swap circuits, and general-purpose logic-controlled switching in industrial and consumer systems. The AEC-Q101 qualification makes it especially suited to under-hood and body-electronics modules where reliability is critical.
When designing with this part, ensure that V_GS drive rises fully above the logic-level threshold (~2.1 V) and that the LFPAK33 thermal pad receives a sufficiently large copper pour on the PCB - particularly important at continuous currents approaching 10 A, where conduction losses dominate. The LFPAK33 footprint is also mechanically robust against vibration, an advantage in automotive environments.
Drop-in-Alternativen für BUK9M85-60E – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
BUK9M85-60EX
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BUK7M67-60EX
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IPD800N06NGBTMA1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BUK9M85-60E Grenzwerte & elektrische Eigenschaften
| Manufacturer | Nexperia |
| Part Number | BUK9M85-60E |
| Transistortyp | N-Channel MOSFET |
| Technology | TrenchMOS |
| Drain-Source Voltage (V_DSS) | 60 V |
| On-Resistance (R_DS(on)) max | 85 mΩ at V_GS = 10 V |
| Continuous Drain Current (I_D) | 12.8 A at T_C |
| Power Dissipation (P_D) | 31 W at T_C |
| Gate Threshold Voltage (V_GS(th)) | Logic level (approx. 1.7 V typical, 2.1 V max) |
| Operating Mode | Enhancement Mode |
| Configuration | Single with built-in diode |
| Gehäuse | LFPAK33 (Power33), surface mount |
| Montageart | Surface Mount |
| Betriebstemperaturbereich | -55 °C to +175 °C (junction) |
| Automotive Qualification | AEC-Q101 qualified |
| JESD-30 Code | R-PSSO-G4 |
| Reference Standard | AEC-Q101; IEC-60134 |
| RoHS-Status | Compliant |
BUK9M85-60E Pin-Konfiguration
| Pin 1 | Gate (G) — Logic-level gate drive input |
| Pin 2 | Source (S) — Source connection (high-current) |
| Pin 3 | Source (S) — Source connection (high-current) |
| Pin 4 | Kelvin Source — Kelvin-source connection (gate-return path) |
| Pin TAB | Drain (TAB) — Drain - exposed thermal pad on bottom of package |
Sicherer Arbeitsbereich (SOA) - BUK9M85-60E
Typische Anwendungen
BUK9M85-60E ist geeignet für 6 Anwendungs: Automotive 12 V Load Switching, Automotive 24 V Truck / Bus Systems, DC-DC Converter Low-Side Switch, Reverse-Polarity Protection / Power OR-ing, Hot-Swap / In-Rush Current Limiter, Industrial Logic-Controlled Switching.
Automotive 12 V Load Switching
The BUK9M85-60E is purpose-built for 12 V automotive load-switching applications such as body-electronics modules, lighting drivers, and accessory controls. Its 60 V V_DSS rating comfortably covers 12 V bus transients including load-dump pulses specified by ISO 7637-2, while the 85 mΩ R_DS(on) at V_GS=10 V keeps conduction loss within budget at typical solenoid or lamp currents up to 10 A. Logic-level V_GS(th) means a 3.3 V or 5 V microcontroller GPIO can drive the gate directly without a charge pump or external gate-driver IC, reducing BOM cost. The AEC-Q101 qualification supports deployment in under-hood and cabin modules where reliability is mandatory.
Empfohlen
Automotive 24 V Truck / Bus Systems
The BUK9M85-60E supports 24 V commercial-vehicle electrical systems such as trucks and buses, where the nominal bus sits at 28 V and transient spikes can approach 40 V. With a 60 V V_DSS rating and 85 mΩ R_DS(on), the part delivers the headroom required for ISO 7637-2 24 V load-dump pulses while still maintaining low conduction loss. The 12.8 A continuous current rating allows direct switching of small DC motors, relay coils, and LED bar segments without paralleling devices. Nexperia's TrenchMOS technology combined with the LFPAK33 Kelvin-source footprint minimises switching losses, important in PWM dimming or motor-speed-control topologies running at 1-20 kHz.
Empfohlen
DC-DC Converter Low-Side Switch
The BUK9M85-60E functions as the low-side synchronous-rectifier or main switch in non-isolated buck converters and buck-boost regulators up to about 30 V input. With 85 mΩ R_DS(on) and logic-level gate drive, the part pairs well with low-voltage PWM controllers and gate-driver ICs in 12 V-input telecom, industrial, and consumer designs. At 12 V to 5 V/3.3 V conversion, peak inductor currents around 8-10 A are well within the 12.8 A continuous rating. The exposed LFPAK33 thermal pad keeps junction temperature rise modest at full load, particularly when the PCB copper-pour area follows Nexperia's LFPAK33 thermal-reference layout.
Empfohlen
Reverse-Polarity Protection / Power OR-ing
The BUK9M85-60E serves as an ideal reverse-polarity-protection or power-OR-ing element between a 12 V/24 V source and downstream electronics. With body diode forward drop eliminated when the channel is on, conduction loss at 10 A is roughly P = I² × R = 10² × 0.085 = 8.5 W, manageable with proper LFPAK33 PCB copper. Logic-level gate drive means a simple microcontroller or comparator can hold the gate on for normal operation and pull it low during a fault, blocking the body diode reverse current. The 60 V V_DSS rating also handles transients on the supply rail.
Empfohlen
Hot-Swap / In-Rush Current Limiter
In 12 V/24 V hot-swap and electronic-circuit-breaker designs, the BUK9M85-60E acts as the inrush-limiting series pass element, gradually turned on by a controlled gate ramp. The 85 mΩ R_DS(on) keeps steady-state dissipation low while the 60 V V_DSS rating absorbs the initial overshoot when downstream bulk capacitors charge. Logic-level V_GS(th) allows direct control from a hot-swap controller IC. The AEC-Q101 qualification supports deployment in rugged industrial and automotive environments where hot-plug events are routine.
Empfohlen
Industrial Logic-Controlled Switching
The BUK9M85-60E suits general-purpose industrial logic-controlled switching: relay replacement, solenoid drivers, LED matrix row/column drivers, and small DC-motor control up to 12.8 A. With V_GS(th) compatible with 3.3 V CMOS logic, designers can drive the gate directly from PLC outputs, microcontroller GPIO, or logic buffers without an external gate-driver stage. The LFPAK33 footprint saves board space versus DPAK and provides superior thermal performance for panel-mount and DIN-rail applications where heat dissipation is constrained. The combination of AEC-Q101 and IEC-60134 qualifications broadens deployment into industrial-grade enclosures.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für BUK9M85-60E – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | BUK9M85-60EX | BUK7M67-60EX | IPD800N06NGBTMA1 |
|---|---|---|---|---|
| Package | LFPAK33 | LFPAK33 - same | LFPAK33 - same | LFPAK33 - same |
| Brand | Nexperia | Nexperia | Nexperia | Infineon |
| Drain-Source Voltage (V_DSS) | 60 V | 60 V | 60 V | 60 V |
| R_DS(on) max at V_GS=10V | 85 mΩ | 85 mΩ | 67 mΩ | 80 mΩ |
| Gate Threshold (V_GS(th)) | Logic level (~1.7 V typ) | Logic level | Logic level | Logic level |
| Technology | TrenchMOS | TrenchMOS | TrenchMOS | OptiMOS-T2 |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Wichtigste Unterscheidungsmerkmale
- AEC-Q101 qualified for automotive applications (vs. BUK9M85-60EX)
- Lower on-resistance at the same logic-level V_GS (vs. BUK7M67-60EX)
- True Kelvin-source connection for clean gate drive (vs. IPD800N06NGBTMA1)
Designhinweise
At continuous 12.8 A drain current and V_DS = 24 V, conduction loss P = I² × R_DS(on) = 12.8² × 0.085 ≈ 13.9 W. The LFPAK33 package achieves roughly 4 °C/W junction-to-case on Nexperia's reference PCB; with 25 cm² of 2 oz copper on the drain pad the junction-to-ambient thermal resistance drops to around 50 °C/W. Estimated: at 25 °C ambient this keeps junction rise to about 70 °C, comfortably within the 175 °C rating - but a heatsink or expanded copper pour is required if the application runs continuously at >10 A.
Use the standard Nexperia LFPAK33 PCB footprint with the drain pad soldered directly to a large copper pour on the top layer, plus an array of thermal vias to the inner/ bottom copper planes. The Kelvin-source pin 4 must be connected to the gate-driver ground return separately from the high-current source pins 2-3 to avoid gate-bounce; a small gate-source resistor (10-100 kΩ) is recommended to prevent unwanted turn-on during fast V_DS transients.
Do not assume the body diode is robust for switching-converter reverse-recovery duty - it is a standard MOSFET body diode intended for commutation only. If used as a synchronous rectifier in a buck converter above ~100 kHz, prefer a part with a Schottky or optimised co-pack. Also, ensure V_GS never exceeds ±20 V absolute maximum even during ESD events; place a 10 kΩ gate-source resistor and TVS protection near the gate pin in harsh automotive environments.
Compliance-Informationen
AEC-Q101 qualified (automotive discrete semiconductor standard, equivalent in spirit to AEC-Q100). Reference standard: IEC-60134. RoHS compliant per Nexperia product page.
