EP1S25F780C7 - Stratix 25K LEs, 780-BGA FPGA | Intel / Altera
Référence : EP1S25F780C7 ✗ Fin de vie| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $285 | $285,00 |
| 10 | $268.5 | $2 685,00 |
| 100 | $245 | $24 500,00 |
| 500 | $220 | $110 000,00 |
| 1 000 | $195 | $195 000,00 |
EP1S25F780C7 Présentation
A Stratix FPGA is a SRAM-based, look-up-table-driven programmable logic device that integrates configurable logic blocks (CLBs / LEs), embedded memory arrays, DSP blocks, high-speed transceiver circuitry, and a programmable interconnect fabric on a single die. Stratix sits in the FPGA hierarchy as: FPGA > programmable logic device > SRAM-based FPGA > high-performance FPGA. The architecture targets high-bandwidth, compute-intensive digital systems where deterministic timing and parallel processing are required.
The EP1S25F780C7 includes 2,566 LABs (Logic Array Blocks) each containing ten logic elements, embedded DSP blocks for fixed- and floating-point arithmetic, TriMatrix on-chip memory (MRAM blocks), and up to 12 channels of high-speed 840 Mbps LVDS signaling per device. The 'F' suffix indicates the FineLine BGA package, '780' denotes the 780-ball pinout, 'C7' indicates the commercial temperature grade (0C to +85C) and speed grade 7. The device supports configuration via passive serial, fast passive parallel, JTAG, or Altera EPC configuration devices.
Typical applications for the EP1S25F780C7 include telecom line cards, high-performance DSP pipelines, baseband signal processing in wireless infrastructure, network switches and routers, broadcast video processing, and ASIC prototyping. The high LE count combined with embedded DSP blocks and multi-gigabit transceivers makes the device particularly suited to data-plane applications requiring deterministic parallel throughput.
When designing with the EP1S25F780C7, ensure proper decoupling on each power rail (VCCINT, VCCIO, VCC_PLL, VCCA) using 0.1 uF and 10 uF ceramic capacitors placed close to the BGA balls. Plan PCB escape routing carefully: 1 mm pitch BGA requires microvia or via-in-pad technology on 6+ layer stack-ups. The device is now mature and was last produced in the original Stratix generation - for new designs, evaluate Cyclone 10, Arria 10, or Agilex families for active lifecycle support.
This page synthesizes distributor pricing, drop-in speed-grade alternatives, package data, and practical design notes that complement the official datasheet.
Alternatives de remplacement direct pour EP1S25F780C7 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec EP1S25F780C7 (même facteur de forme et même empreinte) — différant par Package, Operating Temperature, Speed Grade, DSP Blocks, Process Technology.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
EP1S25F780C6N
✅ Remplacement direct✓ En stock
$780 / unité
Voir la fiche technique →EP1S25F780C6
✅ Remplacement direct✓ En stock
$791.02 / unité
Voir la fiche technique →EP1S25F780C5N
✅ Remplacement direct✓ En stock
$595 / unité
Voir la fiche technique →EP1S25F780C5
✅ Remplacement direct✓ En stock
$1249.5 / unité
Voir la fiche technique →EP1S25F1020C7
✅ Remplacement direct✓ En stock
$820 / unité
Voir la fiche technique →EP1S25F780C7 Valeurs maximales et caractéristiques électriques
| Family | Stratix |
| Logic Elements | 25,660 |
| LABs / CLBs | 2,566 LABs |
| Total Memory Bits | 1,944,576 bits |
| User I/Os | 597 |
| Boîtier | 780-ball FC-FBGA (FineLine BGA) |
| Package Dimensions | 29 x 29 mm |
| Ball Pitch | 1 mm |
| Process Technology | 130 nm CMOS |
| Core Voltage (VCCINT) | 1.5 V |
| Internal Performance | up to 420.17 MHz |
| Température de fonctionnement | 0C to +85C (Commercial) |
| Speed Grade | 7 |
| Type de montage | Surface Mount (BGA) |
Guide de configuration des broches du EP1S25F780C7 29 x 29 mm
Configuration des broches du EP1S25F780C7 (boîtier 29 x 29 mm). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour EP1S25F780C7.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
EP1S25F780C7 convient pour 6 applications: Telecom Line Card Processing, Wireless Baseband DSP Pipeline, Network Switch / Router Data Plane, High-Performance ASIC Prototyping, Broadcast Video Processing and Format Conversion, Industrial Motor Control and Servo Drive.
Telecom Line Card Processing
The EP1S25F780C7's 25,660 logic elements and 1,944,576 memory bits make it well suited to telecom line card packet processing. The 597 user I/Os accommodate wide Utopia/Pos-PHY interfaces and multi-channel SERDES connectivity, while embedded TriMatrix memory buffers packet headers without off-chip SRAM. The 130 nm process delivers deterministic timing at 420 MHz internal clock, supporting ATM, MPLS, and early-stage Ethernet aggregation. The 1.5 V VCCINT and 1 mm-pitch FC-FBGA package enable compact line card PCB designs with adequate margin for industrial telecom environments (0C to +85C).
Recommandé
Wireless Baseband DSP Pipeline
The EP1S25F780C7 integrates dedicated DSP blocks alongside its 25,660 LEs, accelerating fixed-point and limited floating-point arithmetic for 3G/4G baseband processing. The 420.17 MHz internal fMAX supports multi-channel I/Q demodulation, channel coding (Viterbi/Turbo), and FFT processing in W-CDMA and WiMAX implementations. The 597 user I/Os interface to analog front ends, ADC/DAC converters, and CPRI/OBSAI backhaul links. The 780-ball FC-FBGA package provides sufficient I/O density for 4-antenna MIMO configurations typical of macro base stations.
Recommandé
Network Switch / Router Data Plane
The EP1S25F780C7's 25,660 LEs and 597 user I/Os make it ideal for 10 Gbps-class network switch fabric line cards, where it can implement packet classification, deep packet inspection, and queue management. Its 1,944,576 bits of TriMatrix memory store forwarding tables and counters, while the 130 nm process provides deterministic latency for QoS scheduling. The 780-ball FC-FBGA footprint allows direct PCB integration with SFP+ and XFP optical cages, and the device's LVDS capability supports SPI-4.2 bus interconnection to network processors. Industrial temperature grade 0C to +85C is acceptable for controlled-environment switching centers.
Recommandé
High-Performance ASIC Prototyping
The EP1S25F780C7 offers 25,660 LEs and 1.9 Mbits of on-chip memory, providing enough logic capacity to prototype mid-complexity ASICs before tape-out. The Quartus II design flow supports incremental compilation, partition-based synthesis, and standard ASIC verification flow integration. The 597 user I/Os accommodate realistic ASIC pin counts and allow connection to logic analyzers, breakout boards, and real-world peripherals for system-level validation. The 780-ball FC-FBGA package's compact 29 x 29 mm footprint enables prototyping boards that closely match final ASIC dimensions, easing mechanical verification.
Recommandé
Broadcast Video Processing and Format Conversion
The EP1S25F780C7's parallel processing architecture suits real-time video format conversion, scaling, and broadcast signal processing. The 25,660 LEs handle SD/HD video pipelines including deinterlacing, color space conversion, and frame-rate conversion. The 597 user I/Os interface to SDI, HDMI, DVI, and component video I/O chipsets. The 1,944,576 bits of TriMatrix memory buffer multiple video frames, eliminating the need for external SRAM for intermediate buffering. The 130 nm process runs at 420 MHz internal fMAX, supporting pixel-clock-rate video processing at typical broadcast resolutions.
Recommandé
Industrial Motor Control and Servo Drive
The EP1S25F780C7 supports multi-axis servo drive applications where deterministic PWM generation, encoder feedback decoding, and field-oriented control (FOC) loops must execute in parallel. Its 597 user I/Os connect to multi-axis encoder interfaces (EnDat, BiSS, SSI), power-stage gate drivers, and current/voltage ADCs. The 1,944,576 bits of memory store lookup tables for sine/cosine, Park/Clarke transformations, and PI controller state. The commercial 0C to +85C temperature range suits enclosed industrial control cabinets. The 130 nm process is mature and well-characterized for long-life industrial product cycles.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour EP1S25F780C7 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | EP1S25F780C6N | EP1S25F780C6 | EP1S25F780C5N | EP1S25F780C5 | EP1S25F1020C7 |
|---|---|---|---|---|---|---|
| Package | 780-ball FC-FBGA (29x29 mm) | 780-ball FC-FBGA (29x29 mm) - same | 780-ball FC-FBGA (29x29 mm) - same | 780-ball FC-FBGA (29x29 mm) - same | 780-ball FC-FBGA (29x29 mm) - same | 1020-ball FC-FBGA (33x33 mm) - same die, larger package |
| Brand | Intel | Intel | Intel | Intel | Intel | Intel |
| Speed Grade | C7 (mid) | C6 (faster than C7) | C6 (faster than C7) | C5 (fastest) | C5 (fastest) | C7 (same) |
| Logic Elements | 25,660 | 25,660 | 25,660 | 25,660 | 25,660 | 25,660 |
| Total Memory Bits | 1,944,576 | 1,944,576 | 1,944,576 | 1,944,576 | 1,944,576 | 1,944,576 |
| Process Technology | 130 nm CMOS | 130 nm CMOS | 130 nm CMOS | 130 nm CMOS | 130 nm CMOS | 130 nm CMOS |
| Core Voltage | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V |
| Lifecycle Status | NRND | NRND | NRND | NRND | NRND | NRND |
Principaux différenciateurs
- Higher LE count and memory density than EP1S20F780C7 (vs EP1S20F780C7)
- More user I/Os than the EP1S25F672C7 in same Stratix EP1S25 family (vs EP1S25F672C7)
- Compatible with industry-standard Quartus II design flow (vs Xilinx Virtex-II Pro XC2VP30)
Notes de conception
The 780-ball FC-FBGA package has 1 mm ball pitch on a 29 x 29 mm body. Plan PCB escape routing carefully using microvia-in-pad (VIP) technology with 0.4 mm laser vias. A 6-layer stack-up with one ground plane adjacent to the BGA signal layer is recommended. Estimated: with 1 mm pitch and 0.4 mm vias, maximum two signal traces can escape per row between balls without using VIP - factor VIP cost into the PCB budget. Reference the Altera AN 315: BGA PCB Design for Stratix Devices for escape pattern details.
Decouple each Stratix power rail (VCCINT, VCCIO, VCC_PLL, VCCA) with 0.1 uF and 10 uF ceramic capacitors placed within 5 mm of the BGA balls. VCCINT and VCCIO may require up to 2-5 A peak current in high-utilization designs; use a 4-layer power distribution network with at least 2 oz copper on power planes. Estimated: for VCCINT at 1.5 V drawing 3 A peak, expect 4.5 W of core power; budget DC-DC converter accordingly.
Do not assume the EP1S25F780C7 is the same die as the EP1S10 or EP1S20 Stratix variants. The internal logic structure differs and Quartus II compilation must be re-run per device selection. Also, do not mix VCCIO standards on a single bank - assign 3.3 V, 2.5 V, 1.8 V, or 1.5 V interfaces only to their corresponding I/O banks per the pinout file, otherwise input levels become undefined.
Estimate worst-case junction temperature using Stratix power calculator output. Estimated: at 25,660 LEs at 80% utilization with 420 MHz clock, core power can reach 3-5 W on VCCINT plus 1-2 W distributed across VCCIO. The FC-FBGA package has theta_JA approximately 12-15 C/W with adequate PCB thermal vias; junction temperature should remain below 100C for reliable commercial-temperature operation.
Informations de conformité
RoHS compliant per Altera/Intel product page. Not AEC-Q100 qualified - this is a commercial-grade FPGA. For automotive applications, use AEC-Q100 qualified modern alternatives like Cyclone 10 or Agilex families.