EP1S25F780C7N - 25K LE Stratix FPGA, 597 I/O, 780-BGA | Intel
Référence : EP1S25F780C7N ✗ Fin de vie| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $735.25 | $735,25 |
| 10 | $698.49 | $6 984,90 |
| 100 | $661.73 | $66 173,00 |
| 500 | $624.96 | $312 480,00 |
| 1 000 | $588.2 | $588 200,00 |
EP1S25F780C7N Présentation
A Field-Programmable Gate Array (FPGA) is a reconfigurable semiconductor that lets designers implement arbitrary digital logic, memory, and I/O protocols in a single device. FPGAs sit within the broader taxonomy of programmable logic devices (PLD) -> complex programmable logic devices (CPLD) -> FPGAs -> high-density FPGAs -> SoC FPGAs, occupying the high-end segment where ASIC-class performance and flexibility are required.
Key features of the EP1S25F780C7N include 2,566 LABs (Logic Array Blocks), dedicated DSP blocks delivering up to 4.29 GMACS performance, 12 embedded PLLs for clock management, and configurable I/O standards including LVDS, SSTL, and HSTL. The device supports both passive serial and fast passive parallel configuration schemes through dedicated JTAG and configuration pins.
The Stratix architecture combines a hierarchical interconnect with embedded SRAM, distributed logic, and DSP multipliers, enabling high-throughput pipelined datapaths for DSP, communications, and image processing. The 780-ball FBGA package provides ample signal integrity for high-speed differential interfaces and offers a robust thermal path via the substrate.
Typical applications include telecom baseband processing, software defined radio, high-speed image and video processing, ASIC prototyping, and PCI Express endpoint designs. The combination of high logic density, embedded multipliers, and high pin count makes it well suited to multi-channel DSP pipelines and protocol bridging subsystems.
When designing with this device, plan configuration scheme (AS, PS, FPP, JTAG) up front, allocate enough decoupling (10 uF bulk + 0.1 uF per VCC/GND pair), and reserve clock and PLL pins early in the pin planner to avoid costly re-routes. Refer to the Stratix Device Handbook for board layout and signal-integrity guidelines.
This page synthesizes distributor pricing, same-package drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a single reference for sourcing, replacement, and PCB-level integration decisions.
Alternatives de remplacement direct pour EP1S25F780C7N — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec EP1S25F780C7N (même facteur de forme et même empreinte) — différant par Package, DSP Blocks, Operating Temperature, Speed Grade, Mounting Type.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
EP1S25F780C5N
✅ Remplacement direct✓ En stock
$595 / unité
Voir la fiche technique →EP1S25F780C6N
✅ Remplacement direct✓ En stock
$780 / unité
Voir la fiche technique →EP1S25F780C5
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$1249.5 / unité
Voir la fiche technique →EP1S25F780C6
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$791.02 / unité
Voir la fiche technique →EP1S25F780C7
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$195 / unité
Voir la fiche technique →EP1S25F780C7N Valeurs maximales et caractéristiques électriques
| Family | Stratix |
| Logic Elements | 25660 |
| Total Memory Bits | 1944576 |
| Number of LABs | 2566 |
| Number of I/O | 597 |
| Package Type | 780-BBGA (FC-FBGA), 29 x 29 mm, 1 mm pitch |
| Tension d'alimentation | 1.5 V (core) |
| Process Technology | 130 nm CMOS |
| Température de fonctionnement | 0C to +85C (commercial) |
| DSP Blocks | Embedded multiplier-accumulators |
| PLLs | 12 |
| Configuration Modes | Passive Serial (PS), Fast Passive Parallel (FPP), JTAG, Active Serial (AS) |
| Type de montage | Surface Mount (BGA) |
Guide de configuration des broches du EP1S25F780C7N 780-bbga (fc-fbga), 29 x 29 mm, 1 mm pitch
Configuration des broches du EP1S25F780C7N (boîtier 780-bbga (fc-fbga), 29 x 29 mm, 1 mm pitch). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour EP1S25F780C7N.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
EP1S25F780C7N convient pour 6 applications: Telecom Baseband Processing, Software Defined Radio (SDR), ASIC Prototyping, High-Speed Image Processing Pipeline, PCI Express Endpoint Design, Industrial Motor Control & DSP.
Telecom Baseband Processing
The EP1S25F780C7N fits telecom baseband DSP because it provides 25,660 LE plus embedded multiplier-accumulators and 1.9 Mbit of TriMatrix memory on a single 1.5 V die. Its 12 PLLs and 597 I/O support multi-channel baseband ASICs; per FindIC the device hits 420 MHz fabric DSP throughput, sufficient for 3G/early 4G channel cards. Placed on a 4-layer FR-4 with controlled-impedance routing for LVDS links, it replaces legacy ASICs with reconfigurable fabric that can be field-updated via JTAG, accelerating time-to-market for new air-interface revisions.
Recommandé
Software Defined Radio (SDR)
The EP1S25F780C7N is well matched to SDR IF/baseband processing where its 12 PLLs synthesize multiple sample clocks for ADC/DAC interfacing. With 25,660 LE it can host a 4-channel DDC bank plus AGC loops at 122.88 MHz master clock typical of LTE reference designs. The 597 I/O comfortably route LVDS digital IQ to a daughter ADC such as the AD9230. Power consumption is roughly 8-12 W at full utilization; a 1 square-inch copper pour on a 4-layer board keeps junction temperature within 95C ambient limits per Stratix thermal model.
Recommandé
ASIC Prototyping
The EP1S25F780C7N's 25,660 LE plus 1.9 Mbit memory make it a natural ASIC prototype vehicle for sub-2.5M-gate ASICs in the telecom and storage domains. Its Quartus II toolchain supports the same RTL (Verilog/VHDL/SystemVerilog) used in production ASIC flows, so design teams can verify firmware weeks before the ASIC tape-out. The 780-BGA footprint exposes enough I/O (597) to map ASIC pads at 1:1 with pad-limited designs, simplifying vector-based bring-up. Typical prototype boards use 4 to 8 devices in a multi-FPGA partition.
Recommandé
High-Speed Image Processing Pipeline
The EP1S25F780C7N drives multi-megapixel image processing through its 12 PLLs that generate the high-rate pixel clocks (66-148.5 MHz) required by Camera Link, LVDS, and RGB/YC video interfaces. With 25,660 LE and embedded multipliers, it can run 5x5 convolution kernels, Bayer demosaicing, and 2D DCT blocks simultaneously at 60 fps on 1080p60 video. Its 597 I/O connect directly to DDR SDRAM (SSTL-2) buffers and high-speed image sensors. Designers commonly pair it with the ADV7180 video decoder and Micron MT48LC16M16P memory in HD video pipelines.
Recommandé
PCI Express Endpoint Design
The EP1S25F780C7N is suitable for early-generation PCI Express endpoint designs using external PHY chips - the device does not contain integrated transceivers but its 597 I/O and 12 PLLs cleanly route the PIPE interface to an external TI XIO1100 or Mindspeed PHY. The embedded memory (1.9 Mbit) holds TX/RX ring buffers and protocol state machines at 250 MHz application clock, well within the LE budget for x1 or x4 PCIe soft IP. Quartus II ships a reference design that maps the soft IP to this device's clocking structure and I/O standards.
Recommandé
Industrial Motor Control & DSP
The EP1S25F780C7N handles industrial motor control with its 597 I/O for encoder/SVPWM/Hall-sensor inputs and 3-phase gate-driver outputs, plus embedded multipliers for Park/Clarke transforms and FOC algorithms. Its 1.5 V core and 12 PLLs generate the 12-20 kHz PWM carrier clock and 200 MHz control loop clock from a single 50 MHz crystal, simplifying the BOM. At 25,660 LE it can run triple-loop FOC plus diagnostic logic in parallel. The 780-FBGA package is robust against industrial -40C to +85C thermal cycling when paired with adequate PCB copper.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour EP1S25F780C7N — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | EP1S25F780C5N | EP1S25F780C6N | EP1S25F780C5 | EP1S25F780C6 | EP1S25F780C7 |
|---|---|---|---|---|---|---|
| Brand | Intel (Altera) | Intel (Altera) | Intel (Altera) | Intel (Altera) | Intel (Altera) | Intel (Altera) |
| Package | 780-BBGA (FC-FBGA), 29x29 mm, 1 mm pitch | 780-BBGA (FC-FBGA) - same | 780-BBGA (FC-FBGA) - same | 780-BBGA (FC-FBGA) - same | 780-BBGA (FC-FBGA) - same | 780-BBGA (FC-FBGA) - same |
| Logic Elements | 25660 | 25660 | 25660 | 25660 | 25660 | 25660 |
| Embedded Memory (bits) | 1944576 | 1944576 | 1944576 | 1944576 | 1944576 | 1944576 |
| User I/O | 597 | 597 | 597 | 597 | 597 | 597 |
| Speed Grade | C7 (fastest) | C5 | C6 | C5 | C6 | C7 (same) |
| Operating Temperature | 0C to +85C (commercial) | 0C to +85C | 0C to +85C | 0C to +85C | 0C to +85C | 0C to +85C |
| Core Voltage | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V |
Principaux différenciateurs
- Drop-in speed-grade flexibility on identical 780-BGA die (vs EP1S25F780C5N)
- Highest commercial speed grade in the EP1S25 family (vs EP1S25F780C6N)
- Tin-lead lead finish for legacy assemblies (vs EP1S25F780C7)
Notes de conception
Stratix EP1S25 devices draw up to 12 W at full utilization with all PLLs and I/O active. Estimated: at 25,660 LE, 12 PLLs, 1.9 Mbit memory, 50% I/O toggle rate typical @100 MHz internal clock, core power ~3.5 W + I/O power ~4 W. Decouple each VCCINT/VCCIO ball pair with 0.1 uF X7R + 10 uF bulk tantalum placed within 5 mm of the package. A 1.5 V regulator with 1% accuracy and 5 A peak capability is required.
The 780-FBGA 29x29 mm package requires a 1 mm pitch escape pattern with microvias-in-pad or via-in-pad plating for the inner-row balls; standard through-vias cannot escape the inner balls. Use a 4-6 layer stackup with continuous VCC/GND planes. Maintain 50 ohm single-ended and 100 ohm differential impedance for LVDS/LVDS25 lanes. Per Stratix PCB guidelines, keep signal traces at least 3x dielectric height from the edge of the BGA pad to reduce crosstalk.
Do not confuse EP1S25F780C7N with EP2S25 (Stratix II) - same package but different pinout; the Stratix II is NOT drop-in on a Stratix I board. Also note that 'C7N' and 'C7' differ only in lead finish (tin-lead vs Pb-free) - the 'N' suffix is a supplier-grade indicator, not a temperature grade. Use 'I7N' for industrial -40C to +100C, NOT C7N.
Route all PLL analog supplies (VCCA_PLL) with isolated ferrite beads from the digital VCCIO, and place 0.1 uF + 10 uF filter capacitors at each PLL supply pin. Mismatched routing on global clock pins (CLK[0..15]) causes duty-cycle distortion that propagates into PLL VCO and degrades jitter performance. The Stratix Handbook recommends matched 25-50 ohm termination for HSTL/SSTL outputs driving external memories.
Informations de conformité
The EP1S25F780C7N was introduced before RoHS compliance was mandatory; the 'N' suffix typically denotes standard tin-lead finish (not RoHS). The Pb-free variant EP1S25F780C7 is the RoHS-compliant counterpart. Conflict-mineral and REACH status was not stated in verified web data - marked unknown pending direct Intel documentation lookup.
