EP1S25F780C7 - Stratix 25K LEs, 780-BGA FPGA | Intel / Altera
MPN: EP1S25F780C7 ✗ End of Life| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $285 | $285.00 |
| 10 | $268.5 | $2,685.00 |
| 100 | $245 | $24,500.00 |
| 500 | $220 | $110,000.00 |
| 1,000 | $195 | $195,000.00 |
Drop-in alternatives for EP1S25F780C7 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
EP1S25F780C6N
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View Datasheet →EP1S25F780C6
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View Datasheet →EP1S25F780C5N
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View Datasheet →EP1S25F780C5
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View Datasheet →EP1S25F1020C7
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View Datasheet →EP1S25F780C7 Maximum Ratings & Electrical Characteristics
| Family | Stratix |
| Logic Elements | 25,660 |
| LABs / CLBs | 2,566 LABs |
| Total Memory Bits | 1,944,576 bits |
| User I/Os | 597 |
| Package | 780-ball FC-FBGA (FineLine BGA) |
| Package Dimensions | 29 x 29 mm |
| Ball Pitch | 1 mm |
| Process Technology | 130 nm CMOS |
| Core Voltage (VCCINT) | 1.5 V |
| Internal Performance | up to 420.17 MHz |
| Operating Temperature | 0C to +85C (Commercial) |
| Speed Grade | 7 |
| Mounting Type | Surface Mount (BGA) |
EP1S25F780C7 29 x 29 mm Pin Configuration Guide
Complete pinout information for EP1S25F780C7 (29 x 29 mm package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for EP1S25F780C7.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
EP1S25F780C7 is suitable for 6 applications: Telecom Line Card Processing, Wireless Baseband DSP Pipeline, Network Switch / Router Data Plane, High-Performance ASIC Prototyping, Broadcast Video Processing and Format Conversion, Industrial Motor Control and Servo Drive.
Telecom Line Card Processing
The EP1S25F780C7's 25,660 logic elements and 1,944,576 memory bits make it well suited to telecom line card packet processing. The 597 user I/Os accommodate wide Utopia/Pos-PHY interfaces and multi-channel SERDES connectivity, while embedded TriMatrix memory buffers packet headers without off-chip SRAM. The 130 nm process delivers deterministic timing at 420 MHz internal clock, supporting ATM, MPLS, and early-stage Ethernet aggregation. The 1.5 V VCCINT and 1 mm-pitch FC-FBGA package enable compact line card PCB designs with adequate margin for industrial telecom environments (0C to +85C).
Recommended
Wireless Baseband DSP Pipeline
The EP1S25F780C7 integrates dedicated DSP blocks alongside its 25,660 LEs, accelerating fixed-point and limited floating-point arithmetic for 3G/4G baseband processing. The 420.17 MHz internal fMAX supports multi-channel I/Q demodulation, channel coding (Viterbi/Turbo), and FFT processing in W-CDMA and WiMAX implementations. The 597 user I/Os interface to analog front ends, ADC/DAC converters, and CPRI/OBSAI backhaul links. The 780-ball FC-FBGA package provides sufficient I/O density for 4-antenna MIMO configurations typical of macro base stations.
Recommended
Network Switch / Router Data Plane
The EP1S25F780C7's 25,660 LEs and 597 user I/Os make it ideal for 10 Gbps-class network switch fabric line cards, where it can implement packet classification, deep packet inspection, and queue management. Its 1,944,576 bits of TriMatrix memory store forwarding tables and counters, while the 130 nm process provides deterministic latency for QoS scheduling. The 780-ball FC-FBGA footprint allows direct PCB integration with SFP+ and XFP optical cages, and the device's LVDS capability supports SPI-4.2 bus interconnection to network processors. Industrial temperature grade 0C to +85C is acceptable for controlled-environment switching centers.
Recommended
High-Performance ASIC Prototyping
The EP1S25F780C7 offers 25,660 LEs and 1.9 Mbits of on-chip memory, providing enough logic capacity to prototype mid-complexity ASICs before tape-out. The Quartus II design flow supports incremental compilation, partition-based synthesis, and standard ASIC verification flow integration. The 597 user I/Os accommodate realistic ASIC pin counts and allow connection to logic analyzers, breakout boards, and real-world peripherals for system-level validation. The 780-ball FC-FBGA package's compact 29 x 29 mm footprint enables prototyping boards that closely match final ASIC dimensions, easing mechanical verification.
Recommended
Broadcast Video Processing and Format Conversion
The EP1S25F780C7's parallel processing architecture suits real-time video format conversion, scaling, and broadcast signal processing. The 25,660 LEs handle SD/HD video pipelines including deinterlacing, color space conversion, and frame-rate conversion. The 597 user I/Os interface to SDI, HDMI, DVI, and component video I/O chipsets. The 1,944,576 bits of TriMatrix memory buffer multiple video frames, eliminating the need for external SRAM for intermediate buffering. The 130 nm process runs at 420 MHz internal fMAX, supporting pixel-clock-rate video processing at typical broadcast resolutions.
Recommended
Industrial Motor Control and Servo Drive
The EP1S25F780C7 supports multi-axis servo drive applications where deterministic PWM generation, encoder feedback decoding, and field-oriented control (FOC) loops must execute in parallel. Its 597 user I/Os connect to multi-axis encoder interfaces (EnDat, BiSS, SSI), power-stage gate drivers, and current/voltage ADCs. The 1,944,576 bits of memory store lookup tables for sine/cosine, Park/Clarke transformations, and PI controller state. The commercial 0C to +85C temperature range suits enclosed industrial control cabinets. The 130 nm process is mature and well-characterized for long-life industrial product cycles.
Recommended
Recommended Products Summary
Engineering reference data for EP1S25F780C7 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | EP1S25F780C6N | EP1S25F780C6 | EP1S25F780C5N | EP1S25F780C5 | EP1S25F1020C7 |
|---|---|---|---|---|---|---|
| Package | 780-ball FC-FBGA (29x29 mm) | 780-ball FC-FBGA (29x29 mm) - same | 780-ball FC-FBGA (29x29 mm) - same | 780-ball FC-FBGA (29x29 mm) - same | 780-ball FC-FBGA (29x29 mm) - same | 1020-ball FC-FBGA (33x33 mm) - same die, larger package |
| Brand | Intel | Intel | Intel | Intel | Intel | Intel |
| Speed Grade | C7 (mid) | C6 (faster than C7) | C6 (faster than C7) | C5 (fastest) | C5 (fastest) | C7 (same) |
| Logic Elements | 25,660 | 25,660 | 25,660 | 25,660 | 25,660 | 25,660 |
| Total Memory Bits | 1,944,576 | 1,944,576 | 1,944,576 | 1,944,576 | 1,944,576 | 1,944,576 |
| User I/Os | 597 | 597 | 597 | 597 | 597 | [DATA_NEEDED: I/O count for 1020-ball variant, typically higher] |
| Process Technology | 130 nm CMOS | 130 nm CMOS | 130 nm CMOS | 130 nm CMOS | 130 nm CMOS | 130 nm CMOS |
| Core Voltage | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V |
| Lifecycle Status | NRND | NRND | NRND | NRND | NRND | NRND |
Key Differentiators
- Higher LE count and memory density than EP1S20F780C7 (vs EP1S20F780C7)
- More user I/Os than the EP1S25F672C7 in same Stratix EP1S25 family (vs EP1S25F672C7)
- Compatible with industry-standard Quartus II design flow (vs Xilinx Virtex-II Pro XC2VP30)
Design Notes
The 780-ball FC-FBGA package has 1 mm ball pitch on a 29 x 29 mm body. Plan PCB escape routing carefully using microvia-in-pad (VIP) technology with 0.4 mm laser vias. A 6-layer stack-up with one ground plane adjacent to the BGA signal layer is recommended. Estimated: with 1 mm pitch and 0.4 mm vias, maximum two signal traces can escape per row between balls without using VIP - factor VIP cost into the PCB budget. Reference the Altera AN 315: BGA PCB Design for Stratix Devices for escape pattern details.
Decouple each Stratix power rail (VCCINT, VCCIO, VCC_PLL, VCCA) with 0.1 uF and 10 uF ceramic capacitors placed within 5 mm of the BGA balls. VCCINT and VCCIO may require up to 2-5 A peak current in high-utilization designs; use a 4-layer power distribution network with at least 2 oz copper on power planes. Estimated: for VCCINT at 1.5 V drawing 3 A peak, expect 4.5 W of core power; budget DC-DC converter accordingly.
Do not assume the EP1S25F780C7 is the same die as the EP1S10 or EP1S20 Stratix variants. The internal logic structure differs and Quartus II compilation must be re-run per device selection. Also, do not mix VCCIO standards on a single bank - assign 3.3 V, 2.5 V, 1.8 V, or 1.5 V interfaces only to their corresponding I/O banks per the pinout file, otherwise input levels become undefined.
Estimate worst-case junction temperature using Stratix power calculator output. Estimated: at 25,660 LEs at 80% utilization with 420 MHz clock, core power can reach 3-5 W on VCCINT plus 1-2 W distributed across VCCIO. The FC-FBGA package has theta_JA approximately 12-15 C/W with adequate PCB thermal vias; junction temperature should remain below 100C for reliable commercial-temperature operation.
Compliance Information
RoHS compliant per Altera/Intel product page. Not AEC-Q100 qualified - this is a commercial-grade FPGA. For automotive applications, use AEC-Q100 qualified modern alternatives like Cyclone 10 or Agilex families.