IAUTN04S7N004ATMA1 - 40V 0.38mΩ 350A OptiMOS 7 | Infineon
Référence : IAUTN04S7N004ATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $9.85 | $9,85 |
| 10 | $8.92 | $89,20 |
| 100 | $7.65 | $765,00 |
| 500 | $6.8 | $3 400,00 |
| 1 000 | $6.05 | $6 050,00 |
IAUTN04S7N004ATMA1 Présentation
A power MOSFET is a voltage-controlled semiconductor switch that uses a gate signal to modulate conduction between its drain and source terminals, enabling efficient power conversion in switched-mode topologies. As a category, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) belong to the broader family of discrete transistors within power semiconductors, sitting alongside IGBTs and thyristors. The 40 V OptiMOS 7 generation specifically targets low-voltage automotive powertrain, chassis, and body-electronics applications where efficiency, thermal performance, and reliability directly affect vehicle range and system cost.
The IAUTN04S7N004's 0.38 mΩ RDS(on) minimizes I²R losses at high currents, while the optimized gate-charge (Qg) and low Qgd/Qgs ratios reduce switching losses in high-frequency DC-DC and BLDC motor-drive stages. Its AEC-Q101-qualified construction, lead-free PG-HSOF-8-8 package with exposed top-cooling pad, and 175°C maximum junction temperature support the harsh automotive under-hood environment. The device also features a logic-level gate-threshold compatible with microcontroller GPIO drivers.
Typical applications include 12 V/24 V automotive BLDC motor drives (EPS, pumps, fans), 48 V mild-hybrid DC-DC converters, battery protection switches, and high-current solenoid/relay drivers. The combination of very low on-resistance and surface-mount TOLL footprint enables compact, high-power-density designs where traditional D2PAK parts would be too large.
When designing with the IAUTN04S7N004, pay close attention to PCB layout: minimize the high-current loop (drain-source) and gate-drive loop to control parasitic inductance that causes voltage overshoot during turn-off. A 10 Ω gate resistor typically suffices; values below 5 Ω risk ringing, while values above 50 Ω slow switching and increase losses. Thermal management via the top-exposed thermal pad is essential at sustained currents above 200 A.
The TOLL (TO-Leadless) 10x12 mm package provides an RthJC substantially lower than DPAK, enabling 255 W power dissipation with proper PCB copper thermal vias under the exposed pad. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical design notes not collected in the manufacturer datasheet alone.
Alternatives de remplacement direct pour IAUTN04S7N004ATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IAUTN04S7N004ATMA1 (même facteur de forme et même empreinte) — différant par Package, Mounting Type, Automotive Qualification, Technology, Product Family.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IAUCN04S7N004ATMA1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IAUC60N04S6L030HATMA1
✅ Remplacement direct✓ En stock
$0.94 / unité
Voir la fiche technique →IAUCN04S7N015GATMA1
✅ Remplacement direct✓ En stock
$2.21 / unité
Voir la fiche technique →IAUCN04S7N019GATMA1
✅ Remplacement direct✓ En stock
$0.82 / unité
Voir la fiche technique →IAUCN04S7N027GATMA1
✅ Remplacement direct✓ En stock
$0.72 / unité
Voir la fiche technique →IAUCN04S7N037GATMA1
✅ Remplacement direct✓ En stock
$0.89 / unité
Voir la fiche technique →IAUCN04S7L042GATMA1
✅ Remplacement direct✓ En stock
$0.86 / unité
Voir la fiche technique →IAUTN04S7N004ATMA1 Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 7 |
| Technology | N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at Tj | 350 A |
| On-Resistance RDS(on) max | 0.38 mΩ |
| Power Dissipation (PD) at TC | 255 W |
| Plage de température de fonctionnement | -55C to +175C |
| Boîtier | PG-HSOF-8-8 (TOLL 10x12) |
| Type de montage | Surface Mount |
| Qualification | AEC-Q101 Automotive |
| Statut RoHS | Compliant |
| Lead-Free | Yes |
| Polarity | N-Channel |
Configuration des broches de IAUTN04S7N004ATMA1
| Broche 1 | Drain — Power drain (pad) |
| Broche 2 | Drain — Power drain (pad) |
| Broche 3 | Gate — Gate control input |
| Broche 4 | Source — Source return path |
| Broche 5 | Source — Source return path |
| Broche 6 | Drain — Power drain (pad) |
| Broche 7 | Drain — Power drain (pad) |
| Broche 8 | Thermal Pad — Top-exposed thermal pad (electrically floating or source depending on datasheet variant) |
Zone de fonctionnement sûr (DC)
Applications typiques
IAUTN04S7N004ATMA1 convient pour 6 applications: Automotive BLDC Motor Drive (EPS, Pumps, Fans), 48V Mild-Hybrid DC-DC Converter, Battery Disconnect / Protection Switch, High-Current Solenoid and Relay Driver, Industrial High-Current Switching, Robotics and Servo Drive Systems.
Automotive BLDC Motor Drive (EPS, Pumps, Fans)
The IAUTN04S7N004ATMA1's 0.38 mΩ RDS(on) and 350 A continuous drain current make it ideal for automotive brushless DC motor drives including electric power steering, oil pumps, water pumps, and cooling fans. In a typical 3-phase inverter topology, the device handles phase currents up to 200 A peak with minimal conduction loss. The TOLL package enables compact inverter designs where D2PAK parts would be too large. AEC-Q101 qualification ensures reliability under hood at 105C ambient.
Recommandé
48V Mild-Hybrid DC-DC Converter
In 48V mild-hybrid DC-DC converters stepping between 48V and 12V buses, the IAUTN04S7N004ATMA1's low RDS(on) directly improves converter efficiency. At 100 A continuous current, the device dissipates only 3.8 W (I²R), enabling peak efficiencies above 97% in well-designed buck/boost stages. The 40 V VDS rating provides margin against 48V bus transients, and the TOLL footprint supports the high power density required for underbody-mounted converters.
Recommandé
Battery Disconnect / Protection Switch
The IAUTN04S7N004ATMA1 serves as a battery disconnect switch in 12V/24V automotive systems, replacing mechanical contactors with solid-state reliability. Its 350 A continuous rating covers cranking currents (typically 200-300 A peak), while the 0.38 mΩ on-resistance minimizes voltage drop during high-current events. The AEC-Q101 qualification and -55C to +175C operating range ensure operation in extreme under-hood environments.
Recommandé
High-Current Solenoid and Relay Driver
For driving high-current automotive solenoids (transmission shift solenoids, valve actuators, EV contactors), the IAUTN04S7N004ATMA1 provides the low RDS(on) needed for high inrush current handling. Its surface-mount TOLL package eliminates the bulky TO-220 through-hole footprint, enabling PCB-side integration. Fast switching speeds (sub-50 ns) minimize switching losses in PWM-driven solenoid applications up to 20 kHz.
Recommandé
Industrial High-Current Switching
Outside automotive, the IAUTN04S7N004ATMA1 suits industrial high-current switching applications including welding equipment, large UPS battery banks, and motor drives. The 255 W power dissipation rating combined with the top-cooled TOLL package supports sustained operation at currents well above what TO-220 parts can handle. Engineers can mount the device to a heat sink via the top thermal pad for maximum heat extraction.
Recommandé
Robotics and Servo Drive Systems
In robotics servo drives and AGV traction motors, the IAUTN04S7N004ATMA1's combination of low RDS(on), fast switching, and small TOLL footprint enables compact high-power drive stages. The device supports PWM frequencies to 100 kHz with manageable switching losses, enabling tight current-loop control. Multiple devices in parallel can scale to kW-level servo drives while maintaining a small board footprint compared to D2PAK designs.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IAUTN04S7N004ATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IAUCN04S7N004ATMA1 | IAUC60N04S6L030HATMA1 | IAUCN04S7N015GATMA1 | IAUCN04S7N019GATMA1 |
|---|---|---|---|---|---|
| Package | PG-HSOF-8-8 (TOLL 10x12) | PG-HSOF-8-8 (TOLL 10x12) - same | PG-HSOF-8-8 (TOLL 10x12) - same | PG-HSOF-8-8 (TOLL 10x12) - same | PG-HSOF-8-8 (TOLL 10x12) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| VDS max | 40 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) max at VGS=10V | 0.38 mΩ | 0.44 mΩ | 0.30 mΩ | 0.15 mΩ | 0.19 mΩ |
| AEC-Q101 Automotive | Yes | Yes | Yes | Yes | Yes |
| Technology Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS 6 | OptiMOS 7 | OptiMOS 7 |
Principaux différenciateurs
- Higher continuous drain current rating at junction (vs IAUCN04S7N004ATMA1)
- Lower on-resistance than OptiMOS 7 direct equivalent (vs IAUCN04S7N004ATMA1)
- Newer OptiMOS 7 generation vs older OptiMOS 6 (vs IAUC60N04S6L030HATMA1)
Notes de conception
Estimated: At continuous ID=200 A and RDS(on)=0.38 mΩ, conduction loss is approximately 15.2 W per device. Using the TOLL package's RthJC of approximately 0.5 C/W, junction temperature rises 7.6°C above the case. With proper thermal vias (12+ 0.3 mm vias under the exposed pad) connecting to a 2 oz inner copper plane, RthJA drops to roughly 35 C/W, allowing sustained 200 A operation in still air at 85°C ambient. Always verify with a thermal probe in the final assembly.
The TOLL (PG-HSOF-8-8) package requires careful PCB layout to achieve its rated performance. The drain pads (4 of 8) must connect to a wide, thick copper pour (≥2 oz, 50 mm wide) to carry the high current. The source pads need a separate large copper area. The top-exposed thermal pad should be soldered to a heatsink or top-side copper plane for maximum heat extraction. Gate trace width of 0.5 mm is adequate; minimize loop area between gate and source pads to reduce ringing.
Common pitfalls with the IAUTN04S7N004ATMA1 include: (1) insufficient gate-drive voltage - logic-level signals may not fully enhance the device, leaving it in the linear region with high RDS(on); always drive VGS to at least 10 V for full enhancement; (2) missing TVS protection on the 12V/24V bus - load-dump transients can exceed 40 V and destroy the MOSFET; (3) omitting the gate-source pull-down resistor - a 10 kΩ resistor from gate to source prevents false turn-on during transients.
Minimize the high-current loop (drain-source) by placing input capacitors, MOSFET, and load in a tight triangular layout. The gate-drive loop should be separate and small, ideally 5 mm or less, with the gate resistor placed close to the gate pin. Use a kelvin source connection if available to eliminate source-inductance-induced gate-drive errors. For paralleled devices, symmetric PCB layout ensures balanced current sharing and prevents thermal runaway.
Informations de conformité
AEC-Q101 automotive qualified per Infineon datasheet (AEC-Q100 designation is for ICs, not discrete MOSFETs - use AEC-Q101 for this part). RoHS and REACH compliant per Infineon product page.
